Citation: | YU Xuming, XU Yuehang, WEN Zhang, et al., “Large Signal Statistical Model Oriented Parameter Extraction Method for GaN High Electron Mobility Transistors,” Chinese Journal of Electronics, vol. 26, no. 6, pp. 1319-1324, 2017, doi: 10.1049/cje.2017.09.033 |
K. Kobayashi, Y. Chen, I. Smorchkova, et al., "A 2 watt sub-dB noise figure GaN MMIC LNA-PA amplifier with multi-octave bandwidth from 0.2-8GHz", IEEE MTT-S International Microwave Symposium Digest, Honolulu, Hawaii, USA, pp.619-622, 2007.
|
D. Gustafsson, J. Cahuana, D. Kuylenstierna, et al., "A wideband and compact GaN MMIC doherty amplifier for microwave link applications", IEEE Trans. Microwave Theory Techniques, Vol.61, No.2, pp.425-434, 2013.
|
Y.J. Qiu, Y.H. Xu, R.M. Xu, et al., "Compact hybrid broadband GaN HEMT power amplifier based on feedback technique", Electronics Letters, Vol.49, No.5, pp.372-374, 2013.
|
H. Klockenhoff, R. Behtash, W. Joachim, et al., "A compact 16 watt X-band GaN-MMIC power amplifier", IEEE MTT-S International Microwave Symposium Digest, San Francisco, California, USA, pp.1846-1849, 2006.
|
J. Purvjance, M. Petzold and C. Potratz, "A linear statistical FET model using principal component analysis", IEEE Trans. Microwave Theory Techniques, Vol.37, No.9, pp.1389-1394, 1989.
|
M.D. Meehan, T. Wandinger and D.A. Fisher, "Accurate design centering and yield prediction using the truth model", IEEE MTT-S International Microwave Symposium, Boston, MA, USA, pp.1201-1204, 1991.
|
J. Carrol, K. Whelan, S. Prichett, et al., "FET statistical modeling using parameter orthogonalization", IEEE Trans. Microwave Theory Techniques, Vol.44, No.1, pp.47-55, 1996.
|
J.F. Swidzinski and K. Chang, "Nonlinear statistical modeling and yield estimation technique for use in Monte Carlo simulations", IEEE Trans. Microwave Theory Techniques, Vol.48, No.12, pp.2316-2324, 2000.
|
D.A. Martino, P. Marietti, M. Olivieri, et al., "Statistical nonlinear model of MESFET and HEMT devices", IEE Proceedings. Circuits, Devices and Systems, Vol.150, No.2, pp.95-103, 2003.
|
R. Tsai, Y.C. Chen, M. Nishimoto, et al., "Forecasting method for HEMT MMIC large-signal RF yield", Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, Seattle, WA, USA, pp.125-128, 2000.
|
W. Stiebler, P. Kolias and J. Sanctuary, "Statistical largesignal model enabling yield optimization in high-power amplifier design", Compound Semiconductor Integrated Circuit Symposium, Portland, OR, USA, pp.1-4, 2007.
|
P. Manfredi and F.G. Canavero, "Efficient statistical simulation of microwave devices via stochastic testing-based circuit equivalents of nonlinear components", IEEE Trans. Microwave Theory Techniques, Vol.63, No.5, pp.95-103, 2015.
|
Y. Tajima, B. Wrona and K. Mishima, "GaAs FET large-signal model and its application to circuit designs", IEEE Trans. on Electron Devices, Vol.28, No.2, pp.95-103, 1981.
|
W. R. Curtice and M. Ettenberg, "A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers", IEEE Trans. Microwave Theory Techniques, Vol.33, No.12, pp.1383-1394, 1985.
|
I. Angelov, H. Zirath and N. Rorsman, "A new empirical nonlinear model for HEMT and MESFET devices", IEEE Trans. Microwave Theory Techniques, Vol.40, No.12, pp.2258-2266, 1985.
|
O. Jardel and F.D. Groote, "An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR", IEEE Trans. Microwave Theory Techniques, Vol.55, No.12, pp.2660-2669, 2007.
|
K.S. Yuk, G.R. Branner and D.J. McQuate, "A wide band multiharmonic empirical large-signal model for high-power GaN HEMTs with self-heating and charge-trapping effects", IEEE Trans. Microwave Theory Techniques, Vol.57, No.12, pp.3322-3332, 2009.
|
J.B. King and T.J. Brazil, "Nonlinear electrothermal GaN HEMT model applied to high-efficiency power amplifier design", IEEE Trans. Microwave Theory Techniques, Vol.61, No.1, pp.444-454, 2013.
|
C. Wang, Y.H. Xu, X.M. Yu, et al., "An electrothermal model for empirical large signal modeling of AlGaN/GaN HEMTs including self-heating and ambient temperature effects", IEEE Trans. Microwave Theory Techniques, Vol.62, No.12, pp.2878-2888, 2014.
|
I. Angelov, M. Thorsell, D. Kuylenstierna, et al., "Hybrid measurement-based extraction of consistent large-signal models for microwave FETs", European Microwave Conference, Nuremberg, German, pp.267-270, 2013.
|
G. Avolio, A. Raffo, I. Angelov, et al., "A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation", IEEE MTT-S International Microwave Symposium Digest, Seattle, WA, USA, pp.1-3, 2013.
|
SAS Institute Inc., SAS Users Manual, Ver.9.2, Cary, NC, USA, 2007.
|
Y.H. Xu, W.L. Fu, C.S. Wang, et al., "A scalable GaN HEMT large-signal model for high efficiency RF power amplifier design", Journal of Electromagnetic Waves and Applications, Vol.28, No.15, pp.1888-1895, 2014.
|