A New Parameter Extraction Method for Schottky Barrier Diodes

CHANG Yongming; MAO Wei; HAO Yue

doi:10.1049/cje.2019.03.020

Volume 28 Issue 3

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CHANG Yongming, MAO Wei, HAO Yue, “A New Parameter Extraction Method for Schottky Barrier Diodes,” Chinese Journal of Electronics, vol. 28, no. 3, pp. 497-502, 2019, doi: 10.1049/cje.2019.03.020

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CHANG Yongming, MAO Wei, HAO Yue, “A New Parameter Extraction Method for Schottky Barrier Diodes,” Chinese Journal of Electronics, vol. 28, no. 3, pp. 497-502, 2019, doi: 10.1049/cje.2019.03.020

CHANG Yongming, MAO Wei, HAO Yue, “A New Parameter Extraction Method for Schottky Barrier Diodes,” Chinese Journal of Electronics, vol. 28, no. 3, pp. 497-502, 2019, doi: 10.1049/cje.2019.03.020

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A New Parameter Extraction Method for Schottky Barrier Diodes

doi: 10.1049/cje.2019.03.020

State Key Discipline Laboratory of Wide Band Gap Semiconductor Technologies, Department of Microelectronics, Xidian University, Xi'an 710071, China

Funds: This work is supported by the national Natural Science Foundation of China(No.61334002, No.61574112).

Received Date: 2018-07-04
Publish Date: 2019-05-10

Abstract

Abstract

A new parameter extraction method for Schottky barrier diodes is provided in this paper. Since the current model of Schottky barrier diodes is a nonlinear self-consistent equation, the nonlinear inconsistent equations set is composed of nonlinear model equations under different biases. The problem of solving nonlinear inconsistent equations set is transformed into an optimization problem. The global optimal solution of the parameters is obtained by genetic algorithm. Comparing with experimental data, the results indicate that the error of the method proposed by this paper is lower than that of Cheung method.
- Schottky barrier diodes,
- Parameter extraction,
- Genetic algorithm

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References(20)

References

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