A Robust on-Wafer Large Signal Transistor Characterization Method at mm-Wave Frequency

SU Jiangtao; CAI Jialin; ZHENG Xing; SUN Lingling

doi:10.1049/cje.2019.05.013

Volume 28 Issue 4

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Article Navigation > Chinese Journal of Electronics > 2019 > 28(4): 871-877

SU Jiangtao, CAI Jialin, ZHENG Xing, et al., “A Robust on-Wafer Large Signal Transistor Characterization Method at mm-Wave Frequency,” Chinese Journal of Electronics, vol. 28, no. 4, pp. 871-877, 2019, doi: 10.1049/cje.2019.05.013

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SU Jiangtao, CAI Jialin, ZHENG Xing, et al., “A Robust on-Wafer Large Signal Transistor Characterization Method at mm-Wave Frequency,” Chinese Journal of Electronics, vol. 28, no. 4, pp. 871-877, 2019, doi: 10.1049/cje.2019.05.013

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A Robust on-Wafer Large Signal Transistor Characterization Method at mm-Wave Frequency

doi: 10.1049/cje.2019.05.013

1.
Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou 310018, China;
2.
Key Laboratory of Large Scale Integrated Design, Hangzhou 310018, China

Funds: This work is supported by the National Natural Science Foundation of China (No.61827806, No.61871161), the Zhejiang Province Natural Science Foundation (No.LY17F010016, No.LY17F010017, No.LZ17F010001), and the Open Foundation of Science and Technology on Electronic Test Measurement Laboratory (No.614200101010517).

More Information

Corresponding author: SUN Lingling (corresponding author) was born in 1956. She is currently the Director of the Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University. Her research interests include the RF/microwave integrated circuits and systems, and the development of the smart hardware and medical electronic equipments. (Email:sunll@hdu.edu.cn)
Received Date: 2019-01-11
Rev Recd Date: 2019-04-29
Publish Date: 2019-07-10

Abstract

Abstract

Accurate on-wafer large signal characterization of RF transistor is crucial for the optimum design of wireless communication circuits. We report a novel and systematic measurement method for the accurate acquisition of input and output power of on-wafer transistors up to 40GHz. This method employs external couplers to extract the travelling waves, combined with a novel large signal calibration algorithm to calculate the power at on-wafer probe tip. The accuracy of this method was bench marked versus conventional approaches in a real measurement bench, and further been verified by characterizing the large signal response of a 0.25μm GaN HEMT device. It is concluded that the measurement uncertainty has been greatly decreased with this new method, especially at mm-wave frequencies.
- Calibration,
- Nonlinear measurement,
- RF power amplifier,
- mm-wave band,
- On-wafer test

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References

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