Analysis of Transmission Characteristics of Copper/Carbon Nanotube Composite Through-Silicon Via Interconnects

FU Kai; ZHENG Jie; ZHAO Wen sheng; HU Yue; WANG Gaofeng

doi:10.1049/cje.2019.06.005

Volume 28 Issue 5

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FU Kai, ZHENG Jie, ZHAO Wen sheng, et al., “Analysis of Transmission Characteristics of Copper/Carbon Nanotube Composite Through-Silicon Via Interconnects,” Chinese Journal of Electronics, vol. 28, no. 5, pp. 920-924, 2019, doi: 10.1049/cje.2019.06.005

Citation:

FU Kai, ZHENG Jie, ZHAO Wen sheng, et al., “Analysis of Transmission Characteristics of Copper/Carbon Nanotube Composite Through-Silicon Via Interconnects,” Chinese Journal of Electronics, vol. 28, no. 5, pp. 920-924, 2019, doi: 10.1049/cje.2019.06.005

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Analysis of Transmission Characteristics of Copper/Carbon Nanotube Composite Through-Silicon Via Interconnects

doi: 10.1049/cje.2019.06.005

School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China

Funds: This work is supported by the National Natural Science Foundation of China (No.61874038).

Received Date: 2018-11-20
Rev Recd Date: 2019-04-30
Publish Date: 2019-09-10

Abstract

Abstract

We investigated the transmission characteristics of Cu/CNT composite Through-silicon via (TSV) interconnects. The equivalent lumped-element circuit model was established, with the effective conductivity employed for impedance extraction. The impacts of CNT filling ratio, temperature, and other geometrical parameters on the performance were examined.The sensitivity analysis of Cu/CNT composite TSVs was carried out. The electrical performance of Cu/CNT composite TSVs were optimized by utilizing low-permittivity dielectrics or even air-gap.
- Cu/CNT composite,
- Equivalent circuit model Effective conductivity,
- Sensitivity,
- Electrical performance

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References(22)

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