Electrical Derivative Measurement of High-Power InGaAs LDs Under Scanning Current with Variable Step

TAO Min; GUAN Jian; GAO Fengli; GAO Liangli; CAO Junsheng

doi:10.1049/cje.2017.03.006

Volume 26 Issue 3

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Article Navigation > Chinese Journal of Electronics > 2017 > 26(3): 508-513

TAO Min, GUAN Jian, GAO Fengli, et al., “Electrical Derivative Measurement of High-Power InGaAs LDs Under Scanning Current with Variable Step,” Chinese Journal of Electronics, vol. 26, no. 3, pp. 508-513, 2017, doi: 10.1049/cje.2017.03.006

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TAO Min, GUAN Jian, GAO Fengli, et al., “Electrical Derivative Measurement of High-Power InGaAs LDs Under Scanning Current with Variable Step,” Chinese Journal of Electronics, vol. 26, no. 3, pp. 508-513, 2017, doi: 10.1049/cje.2017.03.006

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Electrical Derivative Measurement of High-Power InGaAs LDs Under Scanning Current with Variable Step

doi: 10.1049/cje.2017.03.006

1.
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China;
2.
The 27 th Research Institute, China Electronics Technology Group Corporation, Zhengzhou 450047, China;
3.
Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130031, China

Funds: This work is supported by the Young Scientists Fund of the National Natural Science Foundation of China (No.61204055), the Project of National Key Scientific Instrument and Equipment Development of China (No.2011YQ040077), and the Young Science and research Fund and the Natural Science Foundation of Science and Technology Development Program of Jilin Province, China (No.20130522188JH, No.20140101175JC).

More Information

Corresponding author: GAO Fengli (corresponding author) Ph.D., is an associate professor in College of Electronic Science and Engineering, Jilin University, China. His research interests include weak signal detection, the lowfrequency noise characteristics of semiconductor LDs and their application. (Email:gaofl@jlu.edu.cn)
Received Date: 2015-10-23
Rev Recd Date: 2016-04-18
Publish Date: 2017-05-10

Abstract

Abstract

For the large driving current of high-power semiconductor Laser diodes (LDs), a modified method to measure the electrical derivative of LDs under scanning driving current with variable step length is proposed, which is to achieve the fast and accurate measurement of optical and electrical characteristic parameters of LDs with a relatively small data acquisition. The experimental results show that, with fewer measurements, this method can effectively and accurately measure and extract the LDs corresponding parameters including threshold current (I_th), voltage-current characteristic (V-I), luminous power-current relation (P-I), electrical derivative curve (IdV/dI-I). The wavelet transformation singularity testing results of the threshold current also verify the accuracy, reliability, and advantage of this method.
- Semiconductor laser diodes (LDs),
- Electrical derivative,
- Scanning current,
- Wavelet transform,
- Singularity detection

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References(26)

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