Scalable Multi-harmonic Large-Signal Model for AlGaN/GaN HEMTs Including a Geometry-Dependent Thermal Resistance

WANG Changsi; XU Yuehang; WEN Zhang; CHEN Zhikai; XU Ruimin

doi:10.1049/cje.2017.07.014

Volume 26 Issue 5

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Article Navigation > Chinese Journal of Electronics > 2017 > 26(5): 952-959

WANG Changsi, XU Yuehang, WEN Zhang, et al., “Scalable Multi-harmonic Large-Signal Model for AlGaN/GaN HEMTs Including a Geometry-Dependent Thermal Resistance,” Chinese Journal of Electronics, vol. 26, no. 5, pp. 952-959, 2017, doi: 10.1049/cje.2017.07.014

Citation:

WANG Changsi, XU Yuehang, WEN Zhang, et al., “Scalable Multi-harmonic Large-Signal Model for AlGaN/GaN HEMTs Including a Geometry-Dependent Thermal Resistance,” Chinese Journal of Electronics, vol. 26, no. 5, pp. 952-959, 2017, doi: 10.1049/cje.2017.07.014

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Scalable Multi-harmonic Large-Signal Model for AlGaN/GaN HEMTs Including a Geometry-Dependent Thermal Resistance

doi: 10.1049/cje.2017.07.014

School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China

Funds: This work is supported by the National Natural Science Foundation of China (No.61474020) and the National Key Project of Science and Technology.

More Information

Corresponding author: XU Yuehang (corresponding author) was born in Zhejiang Province, China, in 1981. He received the B.S. and M.S. degrees in electromagnetic field and microwave techniques from UESTC, in 2004 and 2007, respectively, and the Ph.D. from the UESTC jointed with Columbia University in the City of New York in 2010. He joined the Department of Electronic Engineering, UESTC, in 2010 and was promoted to associate professor in 2012. His current research interests are on modeling and characterization of micro/nano-scale electronic devices for RF applications, especially on GaN HEMTs and graphene electronics. (Email:yuehangxu@uestc.edu.cn)
Received Date: 2015-08-26
Rev Recd Date: 2015-11-15
Publish Date: 2017-09-10

Abstract

Abstract

A scalable large-signal model of AlGaN/GaN High electron mobility transistors (HEMTs) suitable for multi-harmonic characterizations is presented. This model is fulfilled utilizing an improved drain-source current (I_ds) formulation with a geometry-dependent thermal resistance (R_th) and charge-trapping modification. The I_ds model is capable of accurately modeling the highorder transconductance (gm), which is significant for the prediction of multi-harmonic characteristics. The thermal resistance is identified by the electro-thermal Finite element method (FEM) simulations, which are physically and easily scalable with the finger numbers, unit gate width and power dissipations of the device. Accurate predictions of the quiescent currents, S-parameters up to 40GHz, and large-signal harmonic performance for the devices with different gate peripheries have been achieved by the proposed model.
- GaN HEMTs,
- Large-signal model,
- Scalable model,
- Thermal resistance

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References(26)

References

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