Large Signal Statistical Model Oriented Parameter Extraction Method for GaN High Electron Mobility Transistors

YU Xuming; XU Yuehang; WEN Zhang; CHEN Zhikai; HONG Wei

doi:10.1049/cje.2017.09.033

Volume 26 Issue 6

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Article Navigation > Chinese Journal of Electronics > 2017 > 26(6): 1319-1324

YU Xuming, XU Yuehang, WEN Zhang, et al., “Large Signal Statistical Model Oriented Parameter Extraction Method for GaN High Electron Mobility Transistors,” Chinese Journal of Electronics, vol. 26, no. 6, pp. 1319-1324, 2017, doi: 10.1049/cje.2017.09.033

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YU Xuming, XU Yuehang, WEN Zhang, et al., “Large Signal Statistical Model Oriented Parameter Extraction Method for GaN High Electron Mobility Transistors,” Chinese Journal of Electronics, vol. 26, no. 6, pp. 1319-1324, 2017, doi: 10.1049/cje.2017.09.033

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Large Signal Statistical Model Oriented Parameter Extraction Method for GaN High Electron Mobility Transistors

doi: 10.1049/cje.2017.09.033

1.
State Key Laboratory of Millimeter Wave, Southeast Univeristy, Nanjing 210016, China;
2.
School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China

Funds: This work is supported by the National Natural Science Foundation of China (No.61474020, No.61201004), and the National Key Project of Science and Technology.

More Information

Corresponding author: XU Yuehang (corresponding author) was born in Zhejiang Province, China, in 1981. He received the B.S. and M.S. degrees in electromagnetic field and microwave techniques from the University of Electronic Science and Technology of China (UESTC), Chengdu, in 2004 and 2007, respectively, and the Ph.D. from the UESTC jointed with Columbia University in the City of New York in 2010. (Email:yuehangxu@uestc.edu.cn)
Received Date: 2015-09-10
Rev Recd Date: 2015-10-16
Publish Date: 2017-11-10

Abstract

Abstract

Efficient parameter extraction method is essential to establish large signal statistical model. This paper presents an automatic parameter extraction method of I-V model for Gallium nitride (GaN) High electron mobility transistors (HEMTs) large signal statistical model. To accurate modeling the statistical characterization, all of 53 parameters in an I-V model are considered. In order to realize automatic parameter extraction, the model parameters are divided into blocks according to their physical meaning to reduce the complexity of the I-V model. Different parameter blocks are extracted separately by fitting the pulsed I-V transfer characteristic curves of the device at different quiescent bias points. A large signal statistical model for 0.25μm GaN HEMTs process has been established by using the proposed method after measuring 34 GaN HEMTs from 10 batches. The results show that the large-signal performances (Output power and Power added efficiency) can be reproduced with high accuracy by the proposed statistical model.
- Statistical model,
- Parameter extraction,
- GaN HEMTs,
- Large signal model

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References(23)

References

K. Kobayashi, Y. Chen, I. Smorchkova, et al., "A 2 watt sub-dB noise figure GaN MMIC LNA-PA amplifier with multi-octave bandwidth from 0.2-8GHz", IEEE MTT-S International Microwave Symposium Digest, Honolulu, Hawaii, USA, pp.619-622, 2007.

D. Gustafsson, J. Cahuana, D. Kuylenstierna, et al., "A wideband and compact GaN MMIC doherty amplifier for microwave link applications", IEEE Trans. Microwave Theory Techniques, Vol.61, No.2, pp.425-434, 2013.

Y.J. Qiu, Y.H. Xu, R.M. Xu, et al., "Compact hybrid broadband GaN HEMT power amplifier based on feedback technique", Electronics Letters, Vol.49, No.5, pp.372-374, 2013.

H. Klockenhoff, R. Behtash, W. Joachim, et al., "A compact 16 watt X-band GaN-MMIC power amplifier", IEEE MTT-S International Microwave Symposium Digest, San Francisco, California, USA, pp.1846-1849, 2006.

J. Purvjance, M. Petzold and C. Potratz, "A linear statistical FET model using principal component analysis", IEEE Trans. Microwave Theory Techniques, Vol.37, No.9, pp.1389-1394, 1989.

M.D. Meehan, T. Wandinger and D.A. Fisher, "Accurate design centering and yield prediction using the truth model", IEEE MTT-S International Microwave Symposium, Boston, MA, USA, pp.1201-1204, 1991.

J. Carrol, K. Whelan, S. Prichett, et al., "FET statistical modeling using parameter orthogonalization", IEEE Trans. Microwave Theory Techniques, Vol.44, No.1, pp.47-55, 1996.

J.F. Swidzinski and K. Chang, "Nonlinear statistical modeling and yield estimation technique for use in Monte Carlo simulations", IEEE Trans. Microwave Theory Techniques, Vol.48, No.12, pp.2316-2324, 2000.

D.A. Martino, P. Marietti, M. Olivieri, et al., "Statistical nonlinear model of MESFET and HEMT devices", IEE Proceedings. Circuits, Devices and Systems, Vol.150, No.2, pp.95-103, 2003.

R. Tsai, Y.C. Chen, M. Nishimoto, et al., "Forecasting method for HEMT MMIC large-signal RF yield", Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, Seattle, WA, USA, pp.125-128, 2000.

W. Stiebler, P. Kolias and J. Sanctuary, "Statistical largesignal model enabling yield optimization in high-power amplifier design", Compound Semiconductor Integrated Circuit Symposium, Portland, OR, USA, pp.1-4, 2007.

P. Manfredi and F.G. Canavero, "Efficient statistical simulation of microwave devices via stochastic testing-based circuit equivalents of nonlinear components", IEEE Trans. Microwave Theory Techniques, Vol.63, No.5, pp.95-103, 2015.

Y. Tajima, B. Wrona and K. Mishima, "GaAs FET large-signal model and its application to circuit designs", IEEE Trans. on Electron Devices, Vol.28, No.2, pp.95-103, 1981.

W. R. Curtice and M. Ettenberg, "A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers", IEEE Trans. Microwave Theory Techniques, Vol.33, No.12, pp.1383-1394, 1985.

I. Angelov, H. Zirath and N. Rorsman, "A new empirical nonlinear model for HEMT and MESFET devices", IEEE Trans. Microwave Theory Techniques, Vol.40, No.12, pp.2258-2266, 1985.

O. Jardel and F.D. Groote, "An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR", IEEE Trans. Microwave Theory Techniques, Vol.55, No.12, pp.2660-2669, 2007.

K.S. Yuk, G.R. Branner and D.J. McQuate, "A wide band multiharmonic empirical large-signal model for high-power GaN HEMTs with self-heating and charge-trapping effects", IEEE Trans. Microwave Theory Techniques, Vol.57, No.12, pp.3322-3332, 2009.

J.B. King and T.J. Brazil, "Nonlinear electrothermal GaN HEMT model applied to high-efficiency power amplifier design", IEEE Trans. Microwave Theory Techniques, Vol.61, No.1, pp.444-454, 2013.

C. Wang, Y.H. Xu, X.M. Yu, et al., "An electrothermal model for empirical large signal modeling of AlGaN/GaN HEMTs including self-heating and ambient temperature effects", IEEE Trans. Microwave Theory Techniques, Vol.62, No.12, pp.2878-2888, 2014.

I. Angelov, M. Thorsell, D. Kuylenstierna, et al., "Hybrid measurement-based extraction of consistent large-signal models for microwave FETs", European Microwave Conference, Nuremberg, German, pp.267-270, 2013.

G. Avolio, A. Raffo, I. Angelov, et al., "A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation", IEEE MTT-S International Microwave Symposium Digest, Seattle, WA, USA, pp.1-3, 2013.

SAS Institute Inc., SAS Users Manual, Ver.9.2, Cary, NC, USA, 2007.

Y.H. Xu, W.L. Fu, C.S. Wang, et al., "A scalable GaN HEMT large-signal model for high efficiency RF power amplifier design", Journal of Electromagnetic Waves and Applications, Vol.28, No.15, pp.1888-1895, 2014.

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