Degradation and Self-recovery of Polycrystalline Silicon TFT CMOS Inverters Under NBTI Stress

GUO Jian; YU Zhinong; YAN Wei; SHI Dawei; XUE Jianshe; XUE Wei

doi:10.1049/cje.2019.03.004

Volume 28 Issue 4

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GUO Jian, YU Zhinong, YAN Wei, et al., “Degradation and Self-recovery of Polycrystalline Silicon TFT CMOS Inverters Under NBTI Stress,” Chinese Journal of Electronics, vol. 28, no. 4, pp. 884, 2019, doi: 10.1049/cje.2019.03.004

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GUO Jian, YU Zhinong, YAN Wei, et al., “Degradation and Self-recovery of Polycrystalline Silicon TFT CMOS Inverters Under NBTI Stress,” Chinese Journal of Electronics, vol. 28, no. 4, pp. 884, 2019, doi: 10.1049/cje.2019.03.004

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Degradation and Self-recovery of Polycrystalline Silicon TFT CMOS Inverters Under NBTI Stress

doi: 10.1049/cje.2019.03.004

1.
School of Optics and Photonics, and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081, China;
2.
Erdos BOE Display Technology Company Limited, Inner Mongolia 017000, China

Funds: This work is supported by the National Natural Science Foundation of China (No. 61675024).

More Information

Corresponding author: YU Zhinong (corresponding author) received the Ph.D. degree in School of the Electronic and Information Engineering from the Xi'an Jiaotong University in 2001. He is currently an associate professor in School of Optoelectronics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology. His research interests include flexible display, thin-film transistor, optical and optoelectronic thin film. (Email:znyu@bit.edu.cn)
Received Date: 2017-04-12
Rev Recd Date: 2018-03-22
Publish Date: 2019-07-10

Abstract

Abstract

Degradation and self-recovery of polycrystalline Silicon (poly-Si) Thin film transistor (TFT) by using complementary metal oxide semiconductor (CMOS) inverter were investigated. Under DC stress, degradation mechanisms were clarified by comparing the Voltage transfer characteristics (VTC) of fresh and stressed inverters. It is determined that Negative bias temperature instability (NBTI) of p-TFT dominates the degradation of the inverter under zero bias DC stress. After removing the stress, the VTC continues to be degraded, because the interface trap-states and the grain boundary trapstates increase due to hydrogen species diffusion. It is found out that the VTC is shifted to its right side severely with negative bias stress of VIN. The NBTI of p-TFT is enhanced and the NBTI of n-TFT also plays a role on the degradation. When removing the negative bias stress, the self-recovery of NBTI of nTFT and the continuing degradation of NBTI of p-TFT become competing mechanisms, together controlling the VTC after-stress behavior. Consequently, the continuing degradation of NBTI of p-TFT is restrained by selfrecovery of NBTI of n-TFT.
- Negative bias temperature instability (NBTI),
- Self-recovery,
- Inverter,
- Polycrystalline silicon,
- Voltage transfer characteristics (VTC)

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References(14)

References

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