Volume 31 Issue 1
Jan.  2022
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HU Jianguo, WANG Deming, WU Jing, “A 2 Kbits Low Power EEPROM for Passive RFID Tag IC,” Chinese Journal of Electronics, vol. 31, no. 1, pp. 18-24, 2022, doi: 10.1049/cje.2021.00.044
Citation: HU Jianguo, WANG Deming, WU Jing, “A 2 Kbits Low Power EEPROM for Passive RFID Tag IC,” Chinese Journal of Electronics, vol. 31, no. 1, pp. 18-24, 2022, doi: 10.1049/cje.2021.00.044

A 2 Kbits Low Power EEPROM for Passive RFID Tag IC

doi: 10.1049/cje.2021.00.044
Funds:  This work was supported by the Key-Area Research and Development Program of Guangdong Province (2019B010142002, 2019B010153001), Guangdong Basic and Applied Basic Research Foundation (2019B1515120025), and the 2016 Guangzhou Innovation and Entrepreneurship Leader Team (CXLJTD-201608)
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  • Author Bio:

    received the B.S. and M.S. degrees in National University of Defense Technology, in 2000 and 2004, respectively, and Ph.D degree in communication and information systems, School of Information Science and Technology, Sun Yat-sen University, Guangzhou, China, in 2010. He is currently a Professor with the School of Microelectronics Science and Technology, Sun Yat-sen University. And he is also the Director of Development Research Institute of Guangzhou Smart City. He is a Scientific and Technological Innovation Leader of the Guangdong Special Branch Project. He is also an Innovative Team Leader in Guangzhou City. Professor Hu has either authored or co-authored over 30 technical papers. He holds over 100 Chinese patents. His research interests include mixed-signal ICs, RFID, Internet of things and artificial intelligence

    (corresponding author) was born in Guangdong, China, in 1985. He received the B.S. degree in electronic science and technology, and Ph.D. degree in communication and information systems, School of Information Science and Technology, Sun Yat-sen University, in 2008 and 2013, respectively. He is currently with the School of Physics and Telecommunication Engineering, South China Normal University. He is also Director of IoT Identification and Sensor IC for Guangdong Engineering Technology Research Center, Deputy Director of Guangzhou Key Laboratory of IoT Identification IC, he has presided over and participated in many provincial and municipal projects, such as Key-Area Research and Development Program of Guangdong Province, and Guangdong Basic and Applied Basic Research Foundation. More than ten IoT chips have been developed, including RFID reader IC, RFID tag IC, NFC IC, contactless smart card, RF chip and memory chip. (Email: is04wdm@mail3.sysu.edu.cn)

    (corresponding author) was born in Guangdong, China, in 1986. He received the B.S. degree in electronic science and technology, South China University of Technology, and M.S. degree in electronics communication engineering, Sun Yat-sen University, Guangzhou, China, in 2010 and 2016, respectively. He is currently a Researcher with the Development Research Institute of Guangzhou Smart City. His research interests include RFID tag and reader IC, analog front end, ESD, LDO, demodulator and so on. (Email: wj@gz-smartcity.org.cn)

  • Received Date: 2021-01-24
  • Accepted Date: 2021-02-07
  • Available Online: 2021-09-24
  • Publish Date: 2022-01-05
  • This paper presents a low power consumption and low cost electrically erasable programmable read-only memory (EEPROM) for radio frequency identification (RFID) tag chip. A read-write circuit with parallel input and serial output is proposed. Only one sensitive amplifier is used to read the data in memory, which can effectively reduce the power consumption of the read operation. Because the tag may be read or written while moving, the internal voltage may change in a wide range. Therefore, this paper designs a charge pump and its control circuit with wide voltage working range. The proposed EEPROM is integrated into an RFID tag chip and fabricated using a 180 nm complementary metal-oxide semiconductor (CMOS) process. Experimental results show that the circuit can work in the input voltage range of 1 V to 1.8 V, and the minimum current of read operation and write operation is 0.68 μ A and 30 μ A respectively, which has the characteristic of low power consumption.
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