Design and Implementation of a Novel Self-bias S-band Broadband GaN Power Amplifier

ZHANG Luchuan; ZHONG Shichang; CHEN Yue

doi:10.23919/cje.2021.00.118

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ZHANG Luchuan, ZHONG Shichang, CHEN Yue, “Design and Implementation of a Novel Self-bias S-band Broadband GaN Power Amplifier,” Chinese Journal of Electronics, in press, doi: 10.23919/cje.2021.00.118, 2022.

Citation:

ZHANG Luchuan, ZHONG Shichang, CHEN Yue, “Design and Implementation of a Novel Self-bias S-band Broadband GaN Power Amplifier,” Chinese Journal of Electronics, in press, doi: 10.23919/cje.2021.00.118, 2022.

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Design and Implementation of a Novel Self-bias S-band Broadband GaN Power Amplifier

doi: 10.23919/cje.2021.00.118

ZHANG Luchuan^{1, 2
,},
ZHONG Shichang^{1, 2
,},
CHEN Yue^{1, 2
,}

1.
Southeast University, Nanjing 210018, China
2.
Nanjing Electronic Devices Institute, Nanjing 210016, China

More Information

Author Bio:
was born in Sichuan, China,in 1980. He received the B.S. degree in microelectronics from Sichuan University (SCU), Chendu, in 2003 and the M.S. degree in Electronic and Communication Engineering, from Southeast University (SEU), Nanjing, China, in 2007. Since 2019, he is studying for a Ph.D. in Electronic information engineering, from Southeast University (SEU), Nanjing, China. In August 2003, he joined in Nanjing Electronic Devices Institute, where he is currently a senior engineering. His work is research and development of microwave monolithic integrated circuit design and module design.(Email: 230199021@seu.edu.cn)

was born in Fujian, China, in 1979. He received the B.S. degree in physics from Jilin University (JLU), Changchun, in 2002 and the M.S. degree in Electronic and Communication Engineering, from Southeast University (SEU), Nanjing, China, in 2012. Since 2018, he is studying for a Ph.D. in Electronic information engineering, from Southeast University (SEU), Nanjing, China. In August 2002, he joined in Nanjing Electronic Devices Institute, where he is currently a professor of engineering. His work is research and development of GaAs and GaN microwave power devices and circuits.(Email: sinoboy@163.com)

was born in Jiangsu, China, in 1993. She received the B.S. degree in communication engineering from Nanjing University of Posts and Communications (NJUPT), Nanjing, in 2015. In August 2015, She joined in Nanjing Electronic Devices Institute, Her work is research and development of GaAs and GaN microwave integrated circuit design and automatic test.(Email: 1536251518@qq.com)
Accepted Date: 2022-06-10

Available Online: 2022-07-01

Abstract

Abstract

In this paper, a 3.6 mm gate width GaN HEMT with 0.35 μm gate length process and input and output matching circuits of Nanjing Electronic Devices Institute are used for broadband design respectively, and a novel high-power and high-efficiency self-bias S-band broadband continuous wave GaN power amplifier is realized. Under the working conditions of 2.2 GHz to 2.6 GHz and 32 V drain power supply, the continuous wave output power of the amplifier is more than 20 W, the power gain is more than 15 dB, and the max power added efficiency is more than 65%. The self-bias amplifier simplifies the circuit structure and realizes excellent circuit performance.
- self-bias,
- GaN HEMT,
- S-band,
- broadband,
- power,
- amplifier

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References(13)

References

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