Technology Dependency of TID Response for a Custom Bandgap Voltage Reference in 65 nm to 28 nm Bulk CMOS Technologies

LIANG Bin; WEN Yi; CHEN Jianjun; CHI Yaqing; YAO Xiaohu

doi:10.23919/cje.2021.00.448

Volume 32 Issue 6

Nov. 2023

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Article Navigation > Chinese Journal of Electronics > 2023 > 32(6): 1286-1292

LIANG Bin, WEN Yi, CHEN Jianjun, et al., “Technology Dependency of TID Response for a Custom Bandgap Voltage Reference in 65 nm to 28 nm Bulk CMOS Technologies,” Chinese Journal of Electronics, vol. 32, no. 6, pp. 1286-1292, 2023, doi: 10.23919/cje.2021.00.448

Citation:

LIANG Bin, WEN Yi, CHEN Jianjun, et al., “Technology Dependency of TID Response for a Custom Bandgap Voltage Reference in 65 nm to 28 nm Bulk CMOS Technologies,” Chinese Journal of Electronics, vol. 32, no. 6, pp. 1286-1292, 2023, doi: 10.23919/cje.2021.00.448

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Technology Dependency of TID Response for a Custom Bandgap Voltage Reference in 65 nm to 28 nm Bulk CMOS Technologies

doi: 10.23919/cje.2021.00.448

1.
College of Computer Science, National University of Defense Technology, Changsha 410073, China

Funds: This work was supported by the National Natural Science Foundation of China (61974163, 62104257) and the High-level Innovative Talent Training Plan of NUDT (4142D125106, 434517212306)

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Author Bio:
Bin LIANG received the B.S. degree and the Ph.D. degree in electronic science and technology from the National University of Defense Technology (NUDT), China. He is currently the Section Chief of the Microelectronics Institute, NUDT. His research interests include high speed communication systems and mixed-signal IC design with its radiation hardening technology, with a deep study in radiation effects and modeling technology. (Email: liangbin110@126.com)

Yi WEN is studing in electronic science and technology from the National University of Defense Technology (NUDT), China. His research interests include high speed communication systems and mixed-signal IC design with its radiation hardening technology, with a deep study in radiation effects and modeling technology. (Email: wenyi19920312@126.com)

Jianjun CHEN received the B.S. degree and the Ph.D. degree in electronic science and technology from the National University of Defense Technology (NUDT), China. His research interests include high speed communication systems and mixed-signal IC design with its radiation hardening technology, with a deep study in radiation effects and modeling technology. (Email: cjj192000@163.com)

Yaqing CHI received the B.S. degree and the Ph.D. degree in electronic science and technology from the National University of Defense Technology (NUDT), China. His research interests include high speed communication systems and mixed-signal IC design with its radiation hardening technology, with a deep study in radiation effects and modeling technology. (Email: yqchi@nudt.edu.cn)

Xiaohu YAO is working in electronic science and technology from the National University of Defense Technology (NUDT), China. His research interests include high speed communication systems and mixed-signal IC design with its radiation hardening technology, with a deep study in radiation effects and modeling technology. (Email: 2386731046@qq.com)
Received Date: 2021-12-24
Accepted Date: 2022-12-01

Available Online: 2023-02-09

Publish Date: 2023-11-05

Abstract

Abstract

Total ionizing dose (TID) radiation response of the custom bandgap voltage reference (BGR) fabricated with 65 nm, 40 nm and 28 nm commercial bulk CMOS technologies is investigated. TID response is assessed employing Co-60 gamma ray source. The measurements indicate that the voltage reference is reduced by 5.67% in 28 nm, 0.56% in 40 nm and increased by 1.28% in 65 nm devices under irradiation up to 1.2 Mrad(Si) TID. After 48 hours of annealing, the voltage reference changes are just −1.84% in 28 nm, 0.14% in 40 nm and 1.14% in 65 nm. The obtained results demonstrate that the custom BGR has naturally superior TID response due to the circuit design margins.
- Bandgap voltage reference,
- Total ionizing dose,
- Co-60 gamma ray irradiation,
- 65 nm to 28 nm bulk CMOS technologies

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References(19)

References

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