Low Loss and Low EMI Noise Trench IGBT with Shallow Emitter Trench Controlled P-Type Dummy Region

ZHANG Jinping; LI Xiaofeng; ZHU Rongrong; WANG Kang; ZHANG Bo

doi:10.23919/cje.2022.00.080

Volume 33 Issue 2

Mar. 2024

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Article Navigation > Chinese Journal of Electronics > 2024 > 33(2): 326-335

Jinping ZHANG, Xiaofeng LI, Rongrong ZHU, et al., “Low Loss and Low EMI Noise Trench IGBT with Shallow Emitter Trench Controlled P-Type Dummy Region,” Chinese Journal of Electronics, vol. 33, no. 2, pp. 326–335, 2024 doi: 10.23919/cje.2022.00.080

Citation:

Jinping ZHANG, Xiaofeng LI, Rongrong ZHU, et al., “Low Loss and Low EMI Noise Trench IGBT with Shallow Emitter Trench Controlled P-Type Dummy Region,” Chinese Journal of Electronics, vol. 33, no. 2, pp. 326–335, 2024 doi: 10.23919/cje.2022.00.080

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Low Loss and Low EMI Noise Trench IGBT with Shallow Emitter Trench Controlled P-Type Dummy Region

doi: 10.23919/cje.2022.00.080

ZHANG Jinping^{1, 2
,
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LI Xiaofeng^1
,,
ZHU Rongrong^1
,,
WANG Kang^1
,,
ZHANG Bo^1
,

1.
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China
2.
Institute of Electronic and Information Engineering of UESTC in Guangdong, Dongguan 523808, China

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Author Bio:
Jinping ZHANG received the Ph.D. degree in microelectronics and solid-state electronics from the University of Electronic Science and Technology of China (UESTC), Chengdu, China, in 2009. He is currently a Professor in UESTC. His research interests include semiconductor power devices and integrated circuits. (Email: jinpingzhang@uestc.edu.cn)

Xiaofeng LI received the B.E. degree in Zhengzhou University, Zhengzhou, China, in 2019. He is now studying for the M.S. degree in the University of Electronic Science and Technology of China. His research interests is semiconductor power devices. (Email: lxfhunan@163.com)

Rongrong ZHU received the B.E. and M.S. degrees in University of Electronic Science and Technology of China (UESTC), Chengdu, China, in 2019 and 2022, respectively. Her research interests include semiconductor power devices. (Email: 421727547@qq.com)

Kang WANG received the B.E. degree in Chongqing University of Posts and Telecommunications, Chongqing, China, in 2017 and M.S. degree in electronic engineering from University of Electronic Science and Technology of China (UESTC), Chengdu, China, in 2020. His research interests is semiconductor power devices. (Email: 1781474678@qq.com)

Bo ZHANG received the B.S. degree in electronic engineering from Beijing Institute of Technology, Beijing, China, in 1985 and M.S. degree in electronic engineering from University of Electronic Science and Technology of China (UESTC), Chengdu, China, in 1988. He is currently a Professor in UESTC, where he is also the Director of the Center for the Integrated Circuits. He has authored or coauthored over 300 referred journal papers and a number of books/book chapters. He has held key positions in and has served on various international conferences committees. In particular, he was the TPC Member of the International Symposium on Power Semiconductor Devices and ICs (ISPSD) from 2010 to 2015. He is also the Editor of the IEEE Transactions on Electron Devices. (Email: bozhang@uestc.edu.cn)
Corresponding author: Email: jinpingzhang@uestc.edu.cn
Received Date: 2022-04-08
Accepted Date: 2022-09-05

Available Online: 2023-04-23

Publish Date: 2024-03-05

Abstract

Abstract

A novel trench insulated gate bipolar transistor (TIGBT) with a shallow emitter trench controlled P-type dummy region (STCP-TIGBT) is proposed. Compared with the conventional TIGBT with floating P-type dummy region (CFP-TIGBT) and TIGBT with floating P-type dummy region and normally on hole path (HFP-TIGBT), the proposed STCP structure not only speeds up the extraction of excessive holes in the turn-off process but also reduces the Miller plateau charge (Q_gc). Therefore, both the power loss and electromagnetic interference (EMI) noise are significantly reduced. Simulation results show that the Q_gc of the proposed device is only 501 nC/cm², which is reduced by 58.5% and 26.4% when compared to the CFP-TIGBT and HFP-TIGBT, respectively. At same on-state voltage drop (V_ceon) of 1.02 V, the turn-off loss (E_off) of the proposed device is 13.49 mJ/cm², which is 64.6% and 67.6% less than those of the CFP-TIGBT and HFP-TIGBT, respectively. Moreover, the reverse recovery dV_ak/dt of the freewheeling diode at same turn-on loss (E_on) of 31.8 mJ/cm² for the proposed STCP-TIGBT is only 2.15 kV/μs, which is reduced by 91.3% and 57.2% when compared to 24.69 kV/μs and 5.02 kV/μs for the CFP-TIGBT and HFP-TIGBT, respectively. The reduced dV/dt significantly suppresses the electromagnetic interference noise generated by the proposed device.
- Trench insulated gate bipolar transistor,
- On-state voltage drop,
- Turn-off loss,
- Turn-on loss,
- Electromagnetic interference noise,
- Shallow emitter trench,
- P-type dummy region

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References(22)

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