Study on Static Deflection Model of MEMS Capacitive Microwave Power Sensors

JIN Ye; WANG Debo

doi:10.23919/cje.2023.00.087

Article Contents

Article Navigation > Chinese Journal of Electronics > 2024 > Accepted Manuscript

Ye JIN and Debo WANG, “Study on Static Deflection Model of MEMS Capacitive Microwave Power Sensors,” Chinese Journal of Electronics, vol. x, no. x, pp. 1–8, xxxx doi: 10.23919/cje.2023.00.087

Citation:

Ye JIN and Debo WANG, “Study on Static Deflection Model of MEMS Capacitive Microwave Power Sensors,” Chinese Journal of Electronics, vol. x, no. x, pp. 1–8, xxxx doi: 10.23919/cje.2023.00.087

Ye JIN and Debo WANG, “Study on Static Deflection Model of MEMS Capacitive Microwave Power Sensors,” Chinese Journal of Electronics, vol. x, no. x, pp. 1–8, xxxx doi: 10.23919/cje.2023.00.087

Citation:

Ye JIN and Debo WANG, “Study on Static Deflection Model of MEMS Capacitive Microwave Power Sensors,” Chinese Journal of Electronics, vol. x, no. x, pp. 1–8, xxxx doi: 10.23919/cje.2023.00.087

PDF( 6221 KB)

Study on Static Deflection Model of MEMS Capacitive Microwave Power Sensors

doi: 10.23919/cje.2023.00.087

JIN Ye^1
,,
WANG Debo^{2
,
,}

1.
College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
2.
College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

More Information

Author Bio:
Ye JIN JIN Ye was born in China in 2002. She studies at Nanjing University of Posts and Telecommunications for her undergraduate degree. Her interest is MEMS microwave power sensor. (Email: 1059831817@qq.com)

Debo WANG WANG Debo was born in China in 1983. He received the B.S. degree in electronic science and technology from the Hebei University of Science and technology, Shijiazhuang, China, in 2007, the M.S. degree and the PhD degree in Key Laboratory of MEMS of the Ministry of Education from the southeast university, Nanjing, China, in 2010 and 2012. He is now a post-doctor in Nanjing University and an associate professor of the Nanjing University of Posts and Telecommunication. The discipline of his research focuses on the RF MEMS devices, particularly on microwave power sensor and its package. (Email: wdb@njupt.edu.cn)
Corresponding author: Email: wdb@njupt.edu.cn
Received Date: 2023-04-02
Accepted Date: 2023-10-27

Available Online: 2024-02-05

Abstract

Abstract

In this paper, a static deflection model of MEMS cantilever beam is proposed, which can better study the force deformation of MEMS cantilever beam and the output characteristics of capacitive microwave power sensor. The deflection curve is used to describe the deformation of the cantilever beam and then the overload power and sensitivity of this power sensor is derived. It is found that the overload power decreases with the beam length, and increases with the initial height of beam. The sensitivity increases with the beam length, and has a linear growth relationship with the measuring electrode width. A MEMS dual-channel microwave power sensor is designed, fabricated and measured. At a microwave signal frequency of 10 GHz, the sensitivity of the sensor is measured to be 0.11 V/W for the thermoelectric detection channel and 65.17 fF/W for the capacitive detection channel. The sensitivity calculated by the lumped model is 92.93 fF/W, by the pivot model is 50.88 fF/W, by the deflection model proposed in this work is 75.21 fF/W. Therefore, the theoretical result of the static deflection model is more consistent with the measured result and has better accuracy than the traditional lumped model and pivot model.
- MEMS cantilever beam,
- Static deflection model,
- Power sensor,
- Overload power,
- Sensitivity.

FullText(HTML)

References(23)

References

[1]	U. Baehr, M. Freier, M. Lewis, et al., “Frequency induced stiction for MEMS accelerometers,” Journal of Microelectromechanical Systems, vol. 29, no. 3, pp. 285–295, 2020. doi: 10.1109/JMEMS.2020.2978879
[2]	M. Ozdogan, S. Towfighian, and R. N. Miles, “Modeling and characterization of a pull-in free MEMS microphone,” IEEE Sensors Journal, vol. 20, no. 12, pp. 6314–6323, 2020. doi: 10.1109/JSEN.2020.2976527
[3]	A. Dehé, V. Krozer, K. Fricke, et al., “Integrated microwave power sensor,” Electronics Letters, vol. 31, no. 25, pp. 2187–2188, 1995. doi: 10.1049/el:19951506
[4]	D. B. Wang and X. P. Liao. “A terminating-type MEMS microwave power sensor and its amplification system, ” Journal of Micromechanics and Microengineering, vol. 20, no. 7, article no. 075021, 2010. doi: 10.1088/0960-1317/20/7/075021
[5]	Z. Q. Zhang, X. P. Liao, and X. H. Wang, “Research on thermocouple distribution for microwave power sensors based on GaAs MMIC process,” IEEE Sensors Journal, vol. 15, no. 8, pp. 4178–4179, 2015. doi: 10.1109/JSEN.2015.2424973
[6]	C. L. Chu and X. P. Liao. “X-band monolithic microwave integrated detector based on MEMS thermoelectric power sensor, ” IEEE Sensors Letters, vol. 3, no. 12, article no. 3502804, 2019. doi: 10.1109/LSENS.2019.2947255
[7]	J. H. Li, X. P. Liao, and C. L. Chu, “A new RF MEMS power sensor based on double-deck thermocouples with high sensitivity and large dynamic range,” IEEE Microwave and Wire less Components Letters, vol. 31, no. 8, pp. 1023–1026, 2021. doi: 10.1109/LMWC.2021.3086141
[8]	J. H. Li and X. P. Liao, “An X-band microwave thermoelectric power detector in 0.18-μm CMOS technology, ” in Proceedings of the 2022 IEEE Sensors, Dallas, USA, pp. 1–4, 2022.
[9]	L. J. Fernández, R. J. Wiegerink, J. Flokstra, et al., “A capacitive RF power sensor based on MEMS technology,” Journal of Micromechanics and Microengineering, vol. 16, no. 7, pp. 1099–1107, 2006. doi: 10.1088/0960-1317/16/7/001
[10]	Y. Cui, X. P. Liao, and Z. Zhu, “A novel microwave power sensor using MEMS fixed-fixed beam, ” in Proceedings of the Sensors, 2021 IEEE, Limerick, Ireland, pp. 1305–1308, 2011.
[11]	Z. X. Yi, X. P. Liao, and Z. Zhu, “An 8–12GHz capacitive power sensor based on MEMS cantilever beam, ” in Proceedings of the Sensors, 2011 IEEE, Limerick, Ireland, pp. 1958–1961, 2011.
[12]	H. Yan and X. P. Liao, “The high power up to 1 W characteristics of the capacitive microwave power sensor with grounded MEMS beam,” IEEE Sensors Journal, vol. 15, no. 12, pp. 6765–6766, 2015. doi: 10.1109/JSEN.2015.2466462
[13]	W. Zuo, Q. T. Guo, X. C. Ji, et al., “Structural optimization of capacitive MEMS microwave power sensor,” IEEE Sensors Journal, vol. 20, no. 19, pp. 11380–11386, 2020. doi: 10.1109/JSEN.2020.2998075
[14]	C. Li, J. J. Xiong, and D. B. Wang, “A novel capacitive microwave power sensor based on double MEMS cantilever beams,” IEEE Sensors Journal, vol. 22, no. 12, pp. 11803–11809, 2022. doi: 10.1109/JSEN.2022.3174556
[15]	D. B. Wang, X. P. Liao, and T. Liu, “A novel thermoelectric and capacitive power sensor with improved dynamic range based on GaAs MMIC technology,” IEEE Electron Device Letters, vol. 33, no. 2, pp. 269–271, 2012. doi: 10.1109/LED.2011.2174610
[16]	D. B. Wang and X. P. Liao, “A novel MEMS double-channel microwave power sensor based on GaAs MMIC technology,” Sensors and Actuators A:Physical, vol. 188 pp. 95–102, 2012. doi: 10.1016/j.sna.2012.04.030
[17]	P. Kosobutskyy, A. Kovalchuk, M. Szermer, et al. , “Statistical optimization of the cantilever beams, ” in Proceedings of the Experience of Designing and Application of CAD Systems in Microelectronics, Lviv, Ukraine, pp. 245–247, 2015.
[18]	Z. X. Yi and X. P. Liao, “A cascaded terminating-type and capacitive-type power sensor for -10- to 22-dBm application,” IEEE Electron Device Letters, vol. 37, no. 4, pp. 489–491, 2016. doi: 10.1109/LED.2016.2532920
[19]	P. V. Kasambe, A. Barwaniwala, B. Sonawane, et al. , “Mathematical modeling and numerical simulation of novel cantilever beam designs for ohmic RF MEMS switch application, ” in Proceedings of the 2019 International Conference on Advances in Computing, Communication and Control, Mumbai, India, pp. 1–6, 2019.
[20]	A. D. Singh and R. M. Patrikar, “Development of nonlinear electromechanical coupled macro model for electrostatic MEMS cantilever beam,” IEEE Access, vol. 7 pp. 140596–140605, 2019. doi: 10.1109/ACCESS.2019.2943422
[21]	Z. Q. Zhang, Y. Guo, F. Li, et al., “A sandwich-type thermoelectric microwave power sensor for GaAs MMIC-compatible applications,” IEEE Electron Device Letters, vol. 37, no. 12, pp. 1639–1641, 2016. doi: 10.1109/LED.2016.2619380
[22]	C. H. Cai, L. D. Wei, X. Wu, et al., “A novel gradient thermoelectric microwave power sensors based on GaAs MMIC technology,” Microsystem Technologies, vol. 27, no. 1, pp. 243–249, 2021. doi: 10.1007/s00542-020-04942-2
[23]	J. H. Li and X. P. Liao, “High-power electro-mechanical behavior of a capacitive microwave power sensor with warped cantilever beam,” Solid-State Electronics, vol. 172 article no. 107877, 2020. doi: 10.1016/j.sse.2020.107877