Citation: | Yazhou DONG, Tianchi ZHOU, Shixiong LIANG, et al., “High Power GaN Doubler with High Duty Cycle Pulse Based on Local Non-Reflection Design,” Chinese Journal of Electronics, vol. x, no. x, pp. 1–8, xxxx doi: 10.23919/cje.2023.00.179 |
[1] |
A. Arbabian, S. Callender, S. Kang, et al., “A 90 GHz hybrid switching pulsed-transmitter for medical imaging,” IEEE Journal of Solid-State Circuits, vol. 45, no. 12, pp. 2667–2681, 2010. doi: 10.1109/JSSC.2010.2077150
|
[2] |
R. Min, X. Wang, J. Zou, et al., “Early gesture recognition with reliable accuracy based on high-resolution IoT radar sensors,” IEEE Internet of Things Journal, vol. 8, no. 20, pp. 15396–15406, 2021. doi: 10.1109/JIOT.2021.3072169
|
[3] |
L. Chettri and R. Bera, “A comprehensive survey on internet of things (IoT) toward 5G wireless systems,” IEEE Internet of Things Journal, vol. 7, no. 1, pp. 16–32, 2020. doi: 10.1109/JIOT.2019.2948888
|
[4] |
F. X. Tang, Y. Kawamoto, N. Kato, et al., “Future intelligent and secure vehicular network toward 6G: Machine-learning approaches,” Proceedings of the IEEE, vol. 108, no. 2, pp. 292–307, 2020. doi: 10.1109/JPROC.2019.2954595
|
[5] |
P. H. Siegel, “THz for space: The golden age, ” in Proceedings of the IEEE MTT-S International Microwave Symposium, Anaheim, CA, USA, pp. 816–819, 2010.
|
[6] |
K. B. Cooper, R. J. Dengler, N. Llombart, et al., “THz imaging radar for standoff personnel screening,” IEEE Transactions on Terahertz Science and Technology, vol. 1, no. 1, pp. 169–182, 2011. doi: 10.1109/TTHZ.2011.2159556
|
[7] |
F. Liu, Y. H. Cui, C. Masouros, et al., “Integrated sensing and communications: Toward dual-functional wireless networks for 6G and beyond,” IEEE Journal on Selected Areas in Communications, vol. 40, no. 6, pp. 1728–1767, 2022. doi: 10.1109/JSAC.2022.3156632
|
[8] |
R. Dahlbäck, V. Drakinskiy, J. Vukusic, et al., “A compact 128-element schottky diode grid frequency doubler generating 0.25 W of output power at 183 GHz,” IEEE Microwave and Wireless Components Letters, vol. 27, no. 2, pp. 162–164, 2017. doi: 10.1109/LMWC.2017.2652857
|
[9] |
J. V. Siles, K. B. Cooper, C. Lee, R et al., “A new generation of room-temperature frequency-multiplied sources with up to 10× higher output power in the 160-GHz-1.6-THz range,” IEEE Transactions on Terahertz Science and Technology, vol. 8, no. 6, pp. 596–604, 2018. doi: 10.1109/TTHZ.2018.2876620
|
[10] |
Y. Z. Dong, H. J. Liang, S. X. Liang, et al., “A meta-structure-based frequency doubler with low input power,” IEEE Electron Device Letters, vol. 43, no. 11, pp. 1830–1833, 2022. doi: 10.1109/LED.2022.3207053
|
[11] |
M. Meneghini, C. De Santi, I. Abid, et al., “GaN-based power devices: Physics, reliability, and perspectives,” Journal of Applied Physics, vol. 130, no. 18, article no. 181101, 2021. doi: 10.1063/5.0061354
|
[12] |
L. Nela, M. Xiao, Y. H. Zhang, et al., “A perspective on multi-channel technology for the next-generation of GaN power devices,” Applied Physics Letters, vol. 120, no. 19, article no. 190501, 2022. doi: 10.1063/5.0086978
|
[13] |
Y. Q. Liao, T. Chen, J. Wang, et al., “Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process,” Applied Physics Letters, vol. 120, no. 12, article no. 122109, 2022. doi: 10.1063/5.0083194
|
[14] |
A. Dash, A. Sharma, S. K. Jain, et al., “Influence of current conduction paths and native defects on gas sensing properties of polar and non-polar GaN,” Journal of Alloys and Compounds, vol. 898 article no. 162808, 2022. doi: 10.1016/j.jallcom.2021.162808
|
[15] |
K. Hoo Teo, Y. H. Zhang, N. Chowdhury, et al., “Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects,” Journal of Applied Physics, vol. 130, no. 16, article no. 160902, 2021. doi: 10.1063/5.0061555
|
[16] |
T. J. Flack, B. N. Pushpakaran, and S. B. Bayne, “GaN technology for power electronic applications: A review,” Journal of Electronic Materials, vol. 45, no. 6, pp. 2673–2682, 2016. doi: 10.1007/s11664-016-4435-3
|
[17] |
B. J. Baliga, “Gallium nitride devices for power electronic applications,” Semiconductor Science and Technology, vol. 28, no. 7, article no. 074011, 2013. doi: 10.1088/0268-1242/28/7/074011
|
[18] |
S. X. Liang, Y. L. Fang, D. Xing, et al., “GaN planar Schottky barrier diode with cut-off frequency of 902 GHz,” Electronics Letters, vol. 52, no. 16, pp. 1408–1410, 2016. doi: 10.1049/el.2016.1937
|
[19] |
X. B. Song, S. X. Liang, Y. J. Lv, et al., “GaN-based frequency doubler with pulsed output power over 1 W at 216 GHz,” IEEE Electron Device Letters, vol. 42, no. 12, pp. 1739–1742, 2021. doi: 10.1109/LED.2021.3119391
|
[20] |
L. S. Zhang, S. X. Liang, Y. J. Lv, et al., “High-Power 300 GHz solid-state source chain based on GaN doublers,” IEEE Electron Device Letters, vol. 42, no. 11, pp. 1588–1591, 2021. doi: 10.1109/LED.2021.3110781
|
[21] |
S. X. Liang, X. B. Song, L. S. Zhang, et al., “A 177–183 GHz high-power GaN-based frequency doubler with over 200 mW output power,” IEEE Electron Device Letters, vol. 41, no. 5, pp. 669–672, 2020. doi: 10.1109/LED.2020.2981939
|
[22] |
B. Zhang, D. F. Ji, D. Fang, et al., “A novel 220-GHz GaN diode on-chip tripler with high driven power,” IEEE Electron Device Letters, vol. 40, no. 5, pp. 780–783, 2019. doi: 10.1109/LED.2019.2903430
|
[23] |
H. H. Liu, Z. W. Liang, J. Meng, et al., “120 GHz frequency-doubler module based on gan schottky barrier diode,” Micromachines, vol. 13, no. 8, article no. 1172, 2022. doi: 10.3390/mi13081172
|
[24] |
J. T. Louhi, A. V. Raisanen, and N. R. Erickson, “Cooled schottky varactor frequency multipliers at submillimeter wavelengths,” IEEE Transactions on Microwave Theory and Techniques, vol. 41, no. 4, pp. 565–571, 1993. doi: 10.1109/22.231647
|
[25] |
Ş. Karataş and Ş. Altındal, “Analysis of I-V characteristics on Au/n-type GaAs Schottky structures in wide temperature range,” Materials Science and Engineering:B, vol. 122, no. 2, pp. 133–139, 2005. doi: 10.1016/j.mseb.2005.05.018
|
[26] |
Y. L. Yang, B. Zhang, Y. W. Wang, et al., “Development of high power 220 GHz frequency triplers based on schottky diodes,” IEEE Access, vol. 8 pp. 74401–74412, 2020. doi: 10.1109/ACCESS.2020.2988454
|
[27] |
J. Q. Deng, Y. T. Yang, Z. M. Zhu, et al., “A 140 – 220-GHz balanced doubler with 8.7%–12.7% efficiency,” IEEE Microwave and Wireless Components Letters, vol. 28, no. 6, pp. 515–517, 2018. doi: 10.1109/LMWC.2018.2823006
|
[28] |
J. Q. Deng, Q. J. Lu, Y. T. Yang, et al., “A 110–170 GHz spatial power-combined frequency tripler with 5.7%–7.8% efficiency and 0.5 W power handling,” Microwave and Optical Technology Letters, vol. 60, no. 5, pp. 1079–1085, 2018. doi: 10.1002/mop.31109
|
[29] |
Z. H. Feng, S. X. Liang, D. Xing, et al. , “High-frequency multiplier based on GaN planar Schottky barrier diodes, ” in Proceedings of the 2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), Chengdu, China, pp. 1–3, 2016.
|