WANG Debo, GAO Bo, ZHAO Jiang, ZHANG Yi, GUO Yanyan. Optimization of Thermoelectric Microwave Power Sensors Based on Thin-Membrane Structure[J]. Chinese Journal of Electronics, 2015, 24(4): 884-888. doi: 10.1049/cje.2015.10.037
Citation: WANG Debo, GAO Bo, ZHAO Jiang, ZHANG Yi, GUO Yanyan. Optimization of Thermoelectric Microwave Power Sensors Based on Thin-Membrane Structure[J]. Chinese Journal of Electronics, 2015, 24(4): 884-888. doi: 10.1049/cje.2015.10.037

Optimization of Thermoelectric Microwave Power Sensors Based on Thin-Membrane Structure

doi: 10.1049/cje.2015.10.037
Funds:  This work is supported by the National Natural Science Foundation of China (No.11304158), the Province Natural Science Foundation of Jiangsu (No.BK20140890), the Open Research Fund of Key Laboratory of MEMS of Ministry of Education, Southeast University (No.3206005302), the Scientific Research Foundation of Nanjing University of Posts and Telecommunications (No.NY213024), and the Provincial College Students' Innovative Training Program (No.XZD2015020).
  • Received Date: 2014-11-20
  • Rev Recd Date: 2015-03-21
  • Publish Date: 2015-10-10
  • In this work, the thermal conduction property of thermoelectric microwave power sensors is researched. The fabrication of the thermoelectric microwave power sensor consists of a front side and a back side processing using GaAs Monolithic microwave integrated circuit (MMIC) process and MEMS technology. An isolation structure on the front side is designed to prevent the thermal conduction from the resistor to the Coplanar waveguide (CPW). A thin-membrane on the back side is designed to prevent the thermal conduction from the resistor to the substrate. For the microwave power sensor without an isolation structure, the sensitivity is about 0.138, 0.136, 0.132, 0.115 and 0.111mV/mW at 8, 9, 10, 11 and 12GHz, respectively. For the microwave power sensor with an isolation structure, the sensitivity is about 0.142, 0.139, 0.135, 0.117 and 0.115mV/mW at 8, 9, 10, 11 and 12GHz, respectively. As a result, the higher thermal conduction efficiency and the higher sensitivity are obtained for the optimized thermoelectric microwave power sensors.
  • loading
  • L. Grno, "Thermal wattmeter with direct power conversion", IEEE Transactions on instrumentation and measurement, Vol.44, No.2, pp.377-378, 1995.
    A. Dehe, V. Krozer, B. Chen, et al., "High-sensitivity microwave power sensor for GaAs-MMIC implementation", IEE Electronics Letters, Vol.32, No.23, pp.2149-2150, 1996.
    V. Milanovic, M. Gaitan, E.D. Bowen, et al., "Thermoelectric power sensor for microwave applications by commercial CMOS fabrication", IEE Electron Letters, Vol.18, No.9, pp.450-452, 1997.
    T. Lalinsky, S. Hascik, Z. Mozolova, et al., "The improved performance of GaAs micromachined power sensor microsystem", Sensors & Actuators A, Vol.76, No.3, pp.241-246, 1999.
    D.B. Wang, X.P. Liao and T. Liu, "Optimization of indirectlyheated type microwave power sensors based on GaAs micromachining", IEEE Sensors of Journal, Vol.12, No.5, pp.1349-1355, 2012.
    D.B. Wang and X.P. Liao, "Research on temperature characteristic of thermoelectric microwave power sensors based on GaAs MMIC technology", IEE Electronics letters, Vol.49, No.23, pp.1462-1464, 2013.
    A. Pantazis, D. Neculoiu, Z. Hatzopoulos, et al., "Millimeterwave passive circuit elements based on GaAs micromachining", Journal of Micromechanics and Microengineering. Vol.15,No.7, pp.s53-s59, 2005.
    J.B. Scott, T.S. Low, S. Cochran, et al., "New thermocouplebased microwave/millimeter-wave power sensor MMIC techniques in GaAs", IEEE Transactions on Microwave Theory and Techniques, Vol.59, No.2, pp.338-344, 2011.
    G.M. Claes, T. Goran, B. Kent, et al., "Design of a micromachined thermopile infrared sensor with a self-supported SiO2/SU-8 membrane", IEEE Sensors of Journal, Vol.8, No.12, pp.2044-2052, 2008.
    D.B. Wang and X.P. Liao, "A novel symmetrical microwave power sensor based on GaAs MMIC technology", Journal of Micromechanics and Microengineering. Vol.19, No.12, pp.125012- 125019, 2009.
    D.B. Wang and X.P. Liao, "A terminating type MEMS microwave power sensor and its amplification system", Journal of Micromechanics and Microengineering. Vol.20, No.7, pp.07502-07509, 2010.
    K.K. Shih and J.M. Blum, "Contact resistances of Au-Ge-Ni, Au-Zn and Al to III-V compounds", Solid-State Electronics, Vol.15, No.11, pp.1177-1180, 1972.
  • 加载中

Catalog

    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索

    Article Metrics

    Article views (202) PDF downloads(665) Cited by()
    Proportional views
    Related

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return