A Practical Design of X-Band Receiver Front-End in 65-nm CMOS

LU Zhijian; GUAN Rui; LI Xiaoyong; ZHOU Jianjun

doi:10.1049/cje.2016.05.004

Volume 25 Issue 3

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Article Navigation > Chinese Journal of Electronics > 2016 > 25(3): 413-417

LU Zhijian, GUAN Rui, LI Xiaoyong, et al., “A Practical Design of X-Band Receiver Front-End in 65-nm CMOS,” Chinese Journal of Electronics, vol. 25, no. 3, pp. 413-417, 2016, doi: 10.1049/cje.2016.05.004

Citation:

LU Zhijian, GUAN Rui, LI Xiaoyong, et al., “A Practical Design of X-Band Receiver Front-End in 65-nm CMOS,” Chinese Journal of Electronics, vol. 25, no. 3, pp. 413-417, 2016, doi: 10.1049/cje.2016.05.004

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A Practical Design of X-Band Receiver Front-End in 65-nm CMOS

doi: 10.1049/cje.2016.05.004

Center for Analog/RF IC, School of Microelectronics, Shanghai Jiao Tong University, Shanghai 200240, China

Funds: This work is supported by Chinese National Major Science and Technology Projects Program (No.2012ZX01020-001-003).

Received Date: 2014-04-09
Rev Recd Date: 2014-06-10
Publish Date: 2016-05-10

Abstract

Abstract

A low-cost low-power area-efficient receiver front-end prototype for X-band applications is presented. The front-end primarily consists of 3 blocks: a singleended input differential-output Low noise amplifier (LNA), a double balanced down-converter, and Inter-frequency (IF) buffers providing single-ended output. Including are also Low dropout regulators (LDO) and Electrostatic discharge (ESD) protection circuits coinciding with the forgoing blocks. Local oscillator (LO) frequency is chosen such that output signal locates in L/S-band for extending subsequent applications. Experimentally exhibiting a conversion gain of around 44dB with 7.5-dB Single-sideband (SSB) Noise figure (NF), the front-end totally draws 24mA from an external 3.3-V supply. Fabricated in a 65-nm CMOS technology, this compact receiver occupies an area of only 0.22mm².
- Area-efficient,
- Low cost CMOS,
- Receiver front-end,
- X-band

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References(13)

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