Current Spreading Effects in Vertical GaN-Based Light-Emitting Diode on Si(111) Substrate

WEI Jingting; ZHANG Baijun; WANG Gang

doi:10.1049/cje.2016.07.014

Volume 25 Issue 4

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Article Navigation > Chinese Journal of Electronics > 2016 > 25(4): 672-677

WEI Jingting, ZHANG Baijun, WANG Gang, “Current Spreading Effects in Vertical GaN-Based Light-Emitting Diode on Si(111) Substrate,” Chinese Journal of Electronics, vol. 25, no. 4, pp. 672-677, 2016, doi: 10.1049/cje.2016.07.014

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WEI Jingting, ZHANG Baijun, WANG Gang, “Current Spreading Effects in Vertical GaN-Based Light-Emitting Diode on Si(111) Substrate,” Chinese Journal of Electronics, vol. 25, no. 4, pp. 672-677, 2016, doi: 10.1049/cje.2016.07.014

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Current Spreading Effects in Vertical GaN-Based Light-Emitting Diode on Si(111) Substrate

doi: 10.1049/cje.2016.07.014

1.
Guangdong Polytechnic Institute, The Open University of Guangdong, Guangzhou 510091, China;
2.
School of Microelectronics, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China

Funds: This work is supported by Research Program of The Open University of Guangdong (No.1318), the National Natural Science Foundation of China (No.61274039), and International Sci. & Tech. Collaboration Program of Guangdong Province, China (No.2013B051000041).

More Information

Corresponding author: ZHANG Baijun (corresponding author) was born in 1971. He received the Ph.D. degree from Jilin University. He is a professor and doctor supervisor of optical engineering and microelectronics at Sun Yat-sen University. His research interests include LED fabrication on Si substrate and wide band semiconductor material growth on Si substrate. (Email:zhbaij@mail.sysu.edu.cn)
Received Date: 2015-05-28
Rev Recd Date: 2015-10-10
Publish Date: 2016-07-10

Abstract

Abstract

The optimal design of GaN-based Light-emitting diode (LED) is important for its reliability. In this work, a new three-Dimensional (3D) circuit model with a resistor network is developed to study the current distribution in the active layer of vertical conducting GaN-based LED grown on Si(111) substrate with different structures and electrode patterns. It consists of resistance of Transparent conductive layer (TCL), resistance of epitaxial layer, intrinsic diodes presenting the active layer, and AlN/Si junction as which the multilayer of AlN/Si is assumed. Simulations results of current distribution in active layers of two kinds of LED structures show that current distribution uniformity is greatly affected by the electrode pattern and the LED structure. Furthermore, the experimentally measured light emission uniformity agrees well with simulation results. The electrical and optical characteristics of LED are obviously affected by the current distribution uniformity.
- Light-emitting diodes,
- Current distribution uniformity,
- Circuit model

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References(20)

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