A 5.7-6.4GHz GaAs HBT Power Amplifier with a Gain Enhanced Bias Circuit

ZHENG Ruiqing; ZHANG Guohao; YU Kai; LI Sizhen; ZHENG Yaohua

doi:10.1049/cje.2016.11.013

Volume 26 Issue 3

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Article Navigation > Chinese Journal of Electronics > 2017 > 26(3): 502-507

ZHENG Ruiqing, ZHANG Guohao, YU Kai, et al., “A 5.7-6.4GHz GaAs HBT Power Amplifier with a Gain Enhanced Bias Circuit,” Chinese Journal of Electronics, vol. 26, no. 3, pp. 502-507, 2017, doi: 10.1049/cje.2016.11.013

Citation:

ZHENG Ruiqing, ZHANG Guohao, YU Kai, et al., “A 5.7-6.4GHz GaAs HBT Power Amplifier with a Gain Enhanced Bias Circuit,” Chinese Journal of Electronics, vol. 26, no. 3, pp. 502-507, 2017, doi: 10.1049/cje.2016.11.013

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A 5.7-6.4GHz GaAs HBT Power Amplifier with a Gain Enhanced Bias Circuit

doi: 10.1049/cje.2016.11.013

School of Information Engineering, Guangdong University of Technology, Guangzhou 510006, China

Funds: This work is supported by the Leading-Talent Specific Foundation of the Government of Guangdong Province, China (No.400130002), and the National Natural Science Foundation of China (No.61404032).

More Information

Corresponding author: YU Kai (corresponding author) received the B.E. and Ph.D. degrees from the School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China, in 2005 and 2009, respectively. From 2009 to 2014,power management integrated circuit, and low-voltage low-power analog integrated circuit. (Email:k.yu@gdut.edu.cn)
Received Date: 2015-01-09
Rev Recd Date: 2015-03-14
Publish Date: 2017-05-10

Abstract

Abstract

This paper describes the design of a 5.7-6.4GHz GaAs Heterojunction bipolar transistor (HBT) power amplifier for broadband wireless application such as wireless metropolitan area networks. A bias circuit is proposed which enhances the power gain and provides a good linearity. Using the wideband matching network techniques with trap circuits embedded to filter the harmonics and the diode-based linearizing techniques, a broadband power amplifier module was obtained which exhibited a gain above 28dB. This is about 1dB improvement compared with those normal bias circuits at a supply voltage of 5V in the frequency range of 5.7-6.4GHz, measured with Continuous wave(CW) signals. The saturated output power was greater than 33dBm in 5.7-6.4GHz and the output 1dB compression point was greater than 31dBm. The phase deviation was less than 5 degrees when the output power below 33dBm. The second and third order harmonic components were also less than -45dBc and -50dBc.
- Broadband wireless application,
- Bias circuit,
- GaAs Heterojunction bipolar transistor,
- Power amplifier,
- Wireless metropolitan area network (WMAN)

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References(11)

References

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