A Design and Comparative Investigation of Graded AlxGa1–xN EBL for W-B0.375GaN/W-B0.45GaN Edge Emitting Laser Diode on AlN Substrate

NIASS Mussaab I.; WANG Fang; LIU Yuhuai

doi:10.1049/cje.2020.00.178

Volume 31 Issue 4

Jul. 2022

Turn off MathJax

Article Contents

Article Navigation > Chinese Journal of Electronics > 2022 > 31(4): 683-689

NIASS Mussaab I., WANG Fang, LIU Yuhuai, “A Design and Comparative Investigation of Graded AlxGa1–xN EBL for W-B0.375GaN/W-B0.45GaN Edge Emitting Laser Diode on AlN Substrate,” Chinese Journal of Electronics, vol. 31, no. 4, pp. 683-689, 2022, doi: 10.1049/cje.2020.00.178

Citation:

NIASS Mussaab I., WANG Fang, LIU Yuhuai, “A Design and Comparative Investigation of Graded Al_xGa_1–_xN EBL for W-B_0.375GaN/W-B_0.45GaN Edge Emitting Laser Diode on AlN Substrate,” Chinese Journal of Electronics, vol. 31, no. 4, pp. 683-689, 2022, doi: 10.1049/cje.2020.00.178

Citation:

PDF( 2695 KB)

A Design and Comparative Investigation of Graded Al_xGa_1–_xN EBL for W-B_0.375GaN/W-B_0.45GaN Edge Emitting Laser Diode on AlN Substrate

doi: 10.1049/cje.2020.00.178

NIASS Mussaab I.^1
,,
WANG Fang^{1, 2
,},
LIU Yuhuai^{1, 2, 3, 4
,}

1.
National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, School of Information Engineering, Zhengzhou University, Zhengzhou 450001, China
2.
Zhengzhou Way Do Electronics Co. Ltd., Zhengzhou 450001, China
3.
Research Institute of Industrial Technology Co. Ltd., Zhengzhou University, Zhengzhou 450001, China
4.
Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Aichi-ken 464-8601, Japan

Funds: This work was supported by National Key Research and Development Program (NKRDP 2016YFE0118400), the Key project of science and technology of Henan Province (172102410062), National Natural Science Foundation of China (61176008), and the National Natural Science Foundation of China Henan Provincial Joint Fund Key Project (U1604263)

More Information

Author Bio:
(corresponding author) received the B.S. degree in electric and electronic engineering from International University of Africa (IUA), Khartoum, Sudan, in 2010 and the M.S. degree in electronics engineering from Sudan University of Science and Technology (SUST) in 2015. From 2006 to 2015, he was a Teaching Assistant with the Faculty of Engineering, IUA, Khartoum, Sudan. Since 2015, he has been a Lecturer at IUA. From 2017, he is a Ph.D. course student in Zhengzhou University, China. His research interest includes simulation of edge emitter laser diode (EELD) based on nitride semiconductor materials. (Email: mussaab99@gmail.com)

received the B.E. degree from Zhengzhou University in 1995, M.S. degree from Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (CAS) in 1998 in China, and Ph.D. degree from Mie University in 2008 in Japan. From 1998 to 2002, she had been worked for Research Institute of Post and Telecommunication, Ministry of Information Industry of China. Since 2010, she has been an Associate Professor in Zhengzhou University, China. Her research interests include wireless communication system and nitride semiconductor devices. (Email: iefwang@zzu.edu.cn)

received the B.S. degree from Anhui Normal University in 1993, M.S. and Ph.D. degrees from Anhui Institute of Optics and Fine Mechanics, CAS in 1996 and 1999, respectively. From 1999 to 2000, he was a Postdoctoral researcher in Institute of Semiconductors, CAS. He was a Research Fellow in The University of Tokushima from 2000 to 2003, Mie University from 2003 to 2007, and an Assistant Professor in Tohoku University from 2007 to 2011 in Japan. Since 2011, he has been a Professor in Zhengzhou University, China. His research interests cover nitride semiconductor materials and devices. (Email: ieyhliu@zzu.edu.cn)
Received Date: 2020-06-17
Accepted Date: 2021-10-30

Available Online: 2022-02-24

Publish Date: 2022-07-05

Abstract

Abstract

In this paper, we numerically demonstrated the possibility of using wurtzite boron gallium nitride (W-BGaN) as active layers (quantum well and quantum barriers) along with aluminum gallium nitride (AlGaN) to achieve lasing at a deep ultraviolet range at 263 nm for edge emitting laser diode. The laser diode structure simulations were conducted by using the Crosslight-LASTIP software with a self-consistency model for varies quantity calculations. Moreover, multiple designed structures such as full and half have been achieved as well as the study of the effect of grading engineering/techniques at the electron blocking layer for linearly-graded-down and linearly-graded-up grading techniques were also emphasized. As a result, a maximum emitted power of 26 W, a minimum threshold current of 308 mA, a slope efficiency of 2.82 W/A, and a minimum p-type resistivity of 0.228 Ω · cm from the different doping concentrations and geometrical distances were thoroughly observed and jotted down.
- Edge emitting laser diodes (EELD),
- Semiconducting aluminum compounds,
- Heterojunction semiconductor devices,
- Quantum wells

FullText(HTML)

References(20)

References

[1]	Sailo L., Ralte R. L., Lalchhuanawmi M., et al., “Calculation of the band structure and band splitting energy of boron compounds (BX, X=N, P, As, Sb) using modified Becke-Johnson potential,” IOSR-JAP, vol.8, no.6, pp.1–5, 2016.
[2]	Li D., Jiang K., Sun X., and Chunlei Guo, “AlGaN photonics: recent advances in materials and ultraviolet devices,” Adv. Opt. Photon., vol.10, pp.43–110, 2018. doi: 10.1364/AOP.10.000043
[3]	Chowdhury M. Z., Hossan M. T., Islam A., and Yeong Min Jang, “A comparative survey of optical wireless technologies: Architectures and applications,” IEEE Access, vol.6, pp.9819–9840, 2018. doi: 10.1109/ACCESS.2018.2792419
[4]	Uysal M. and Nouri H., “Optical wireless communications – An emerging technology,” 2014 16th International Conference on Transparent Optical Networks (ICTON), Graz, Austria, pp.1−7, 2014.
[5]	Oubei H. M., Shen C., Kammoun A., et al.,, “Light based underwater wireless communications,” Jpn. J. Appl. Physics, vol.57, no.8S2, article no.08PA06, 2018.
[6]	Niass M. I., Zang J., Lu Z., et al., “Structure optimization of 266 nm Al0.53GaN/Al0.75GaN SQW DUV-LD,” J Cryst Growth, vol.506, pp.24–29, 2019. doi: 10.1016/j.jcrysgro.2018.09.038
[7]	Liu K., Sun H., AlQatari F., et al., “Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering,” Appl. Phys. Lett., vol.111, article no.222106, 2017. doi: 10.1063/1.5008451
[8]	Wei C. H., Xie Z. Y., Edgar J. H., et al., “MOCVD growth of GaBN on 6H-SiC (0001) substrates,” J. Electron. Mater, vol.29, pp.452–456, 2000. doi: 10.1007/s11664-000-0160-y
[9]	Bonef B., Cramer R., and James S. Speck, “Nanometer scale composition study of MBE grown BGaN performed by atom probe tomography,” J Appl Phys, vol.121, article no.225701, 2017. doi: 10.1063/1.4984087
[10]	Lymperakis L., “Ab-initio study of boron incorporation and compositional limits at GaN and AlN (0001) surfaces,” AIP Advances, vol.8, article no.065301, 2018. doi: 10.1063/1.5029339
[11]	Kadys A., Mickevičius J., Malinauskas T., et al., “Optical and structural properties of BGaN layers grown on different substrates,” J Phys D: Appl Phys, vol.48, no.46, article no.465307, 2015. doi: 10.1088/0022-3727/48/46/465307
[12]	Park S. H. and Ahn D., “Thoeretical studies on TM-polarized light emission for ultraviolet BAlGaN/AlN optoelectronic devices,” IEEE Photonics Technology Letters, vol.28, no.20, pp.2153–2155, 2016. doi: 10.1109/LPT.2016.2585497
[13]	Park S. H. and Ahn D., “Substrate dependence of TM-polarized light emission characteristics of BAlGaN/AlN quantum wells,” Optics Communications, vol.417, pp.76–78, 2018. doi: 10.1016/j.optcom.2018.02.050
[14]	Park S. H. and Ahn D., “Effect of boron incorporation on light emission characteristics of UV BAlGaN/AlN quantum well structures,” Appl. Phys. Express, vol.9, no.2, article no.021001, 2016. doi: 10.7567/APEX.9.021001
[15]	Chen J. R., Ko T. S., Su P. Y., et al., “Numerical study on optimization of active layer structures for GaN/AlGaN multiple-quantum-well laser diodes,” J Lightwave Technol, vol.26, no.17, pp.3155–3165, 2008. doi: 10.1109/JLT.2008.926939
[16]	Bulashevich K. A., Ramm M. S., and Karpov S. Y., “Effects of electron and optical confinement on performance of UV laser diodes,” Phys. Stat. Solidi (C), vol.6, pp.603–606, 2009. doi: 10.1002/pssc.200880405
[17]	Zhang Z., Kushimoto M., Sakai T., et al., “A 271.8 nm deep-ultraviolet laser diode for room temperature operation,” Applied Physics Express, vol.12, no.12, article no.124003, 2019. doi: 10.7567/1882-0786/ab50e0
[18]	Martienssen W and Warlimont H, Springer Handbook of Condensed Matter and Materials Data, Germany: Springer, 2005.
[19]	Chuang S. L. and Chang C. S., “A band-structure model of strained quantum-well wurtzite semiconductors,” Semicond Sci Tech, vol.12, no.3, pp.252–263, 1997. doi: 10.1088/0268-1242/12/3/004
[20]	De Paiva R., Nogueira R. A., Azevedo S., and J. R. Kaschny, “Effective mass properties of Al1-xBxN ordered alloys: A first-principles study,” Appl Phys A, vol.95, pp.655–659, 2009. doi: 10.1007/s00339-009-5148-8