Volume 31 Issue 4
Jul.  2022
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HU Shihui, ZHANG Jizhao, WANG Zhongrong, et al., “A Comprehensive Study on the Theory of Graphene Solution-Gated Field Effect Transistor: Simulations and Experiments,” Chinese Journal of Electronics, vol. 31, no. 4, pp. 652-657, 2022, doi: 10.1049/cje.2021.00.032
Citation: HU Shihui, ZHANG Jizhao, WANG Zhongrong, et al., “A Comprehensive Study on the Theory of Graphene Solution-Gated Field Effect Transistor: Simulations and Experiments,” Chinese Journal of Electronics, vol. 31, no. 4, pp. 652-657, 2022, doi: 10.1049/cje.2021.00.032

A Comprehensive Study on the Theory of Graphene Solution-Gated Field Effect Transistor: Simulations and Experiments

doi: 10.1049/cje.2021.00.032
Funds:  This work was supported by the National Natural Science Foundation of China (61771260).
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  • Author Bio:

    received the B.S. degree in electronic information from Southwest Jiaotong University and is now a Ph.D. student in College of Electronic Information and Optical Engineering, Nankai University. Her research interests are biomedical electronic sensing and simulation of semiconductor devices. (Email: 1120170101@mail.nankai.edu.cn)

    received the B.S. degree in electronics from Xinjiang Agricultural University and the M.S. degree in College of Electronic Information and Optical Engineering, Nankai University. His main research direction is DNA electronic sensing

    received the Ph.D. degree in Nankai University in 2019, then she worked in College of Electronic and Information Engineering, Hebei University. Her research interests are electronic devices based on two-dimensional material

    (corresponding author) received the Ph.D. degree in microelectronic from Nankai University. She is now a Professor in College of Electronic Information and Optical Engineering, Nankai University. Her main research interests include biomedical electronic engineering. (Email: jiayf@nankai.edu.cn)

  • Received Date: 2021-01-17
  • Accepted Date: 2021-08-31
  • Available Online: 2021-11-05
  • Publish Date: 2022-07-05
  • Graphene solution-gated field effect transistors (G-SgFETs) have been widely developed in the field of biosensors, but deficiencies in their theories still exist. A theoretical model for G-SgFET, including the three-terminal equivalent circuit model and the numerically calculating method, is proposed by the comprehensive analyses of the graphene-liquid interface and the FET principle. Not only the applied voltages on the electrode-pairs of gate-source and drain-source, but also the nature of graphene and its derivatives are considered by analysing their influences on the Fermi level, the carriers’ concentration and mobility, which may consequently affect the output drain-source current. To verify whether it is available for G-SgFETs based on different method prepared graphene, three kinds of graphene materials which are liquid-phase exfoliated graphene, reduced graphene oxide (rGO), and tetra (4-aminophenyl) porphyrin hybridized rGO are used as examples. The coincidences of calculated output and transfer feature curves with the measured ones are obtained to confirm its adaptivity for simulating the basic G-SgFETs’ electric features, by modulating Fermi level and mobility. Furthermore, the model is exploited to simulate G-SgFETs’ current responding to the biological functionalization with aptamer and the detections for circulating tumor cells, as a proof-of-concept. The calculated current changes are compared with the experimental results, to verify the proposed G-SgFETs’ model is also suitable for mimicking the bio-electronic responding, which may give a preview of some conceived G-SgFETs’ biosensors and improve the design efficiency.
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