High Power 170 GHz Frequency Doubler Based on GaAs Schottky Diodes

TIAN Yaoling; HE Yue; HUANG Kun; JIANG Jun; LIN Changxing; ZHANG Jian

doi:10.1049/cje.2021.00.248

Volume 31 Issue 3

May 2022

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TIAN Yaoling, HE Yue, HUANG Kun, et al., “High Power 170 GHz Frequency Doubler Based on GaAs Schottky Diodes,” Chinese Journal of Electronics, vol. 31, no. 3, pp. 547-554, 2022, doi: 10.1049/cje.2021.00.248

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TIAN Yaoling, HE Yue, HUANG Kun, et al., “High Power 170 GHz Frequency Doubler Based on GaAs Schottky Diodes,” Chinese Journal of Electronics, vol. 31, no. 3, pp. 547-554, 2022, doi: 10.1049/cje.2021.00.248

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High Power 170 GHz Frequency Doubler Based on GaAs Schottky Diodes

doi: 10.1049/cje.2021.00.248

TIAN Yaoling^{1, 2
,},
HE Yue^{1, 2
,},
HUANG Kun^{1, 2
,},
JIANG Jun^{1, 2
,},
LIN Changxing^{1, 2
,},
ZHANG Jian^3
,

1.
Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China
2.
Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621900, China
3.
School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China

Funds: This work was supported in part by the National Key R&D Program of China (2018YFB1801504) and President Funding of China Academy of Engineering Physics (YZJJLX2018009)

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Author Bio:
is an Assistant Researcher in the Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, China. He received the B.S. degree from University of Science and Technology of China in 2013, and the M.S. degree in radio physics from Graduate school of China Academy of Engineering Physics in 2016. His current research interests include submillimeter multiplier based on Schottky diodes and microwave active circuits. (Email: tianyaoling@mtrc.ac.cn)

is an Assistant Researcher in the Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, China. He received the B.S. degree in biomedical engineering from University of Electronic Science and Technology of China, Chengdu, China, in 2010, and the M.S. degree in circuits and systems in 2013. His current research interests include Terahertz solid-state mixers and multipliers based on Schottky diodes. (Email: heyue@mtrc.ac.cn)

is an Assistant Researcher in the Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, China. He received the B.S. and M.S. degrees in electromagnetic fields and microwave techniques from University of Electronic Science and Technology of China. His current research is millimeter-wave passive filters and waveguide components. (Email: huangkun@mtrc.ac.cn)

is an Assistant Researcher in the Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, China. He received the B.S. degree from Tsinghua University in 2011, and the Ph.D. degree in radio physics from Graduate School of China Academy of Engineering Physics in 2017. His current research interests include mixer and multiplier based on Schottky diodes and passive waveguide components. (Email: jiangjun@mtrc.ac.cn)

(corresponding author) was born in Chongqing, China, in 1986. He received the B.S. degree in engineering physics and Ph.D. degree in nuclear science and technology from Tsinghua University, Beijing, China, in 2007 and 2012, respectively. He was a Research Assistant from June 2009 to December 2009 with the European Organization for Nuclear Research (CERN). He joined the Institute of Electronic Engineering, China Academy of Engi neering Physics, Mianyang, China, in 2012. His current research involves algorithm and implementation of high-speed demodulation for communication and terahertz wireless local area network. (Email: linchangxing@yeah.net)

(corresponding author) was born in Sichuan Province, China, in 1968. He received the B.S. degree in electronic techniques from the National University of Defense Technology, Changsha, China, in 1989, the M.S. degree in communication engineering from the China Academy of Engineering Physics, Mianyang, China, in 1994, and the Ph.D. degree in electrical engineering from Chongqing University, Chongqing, China, in 1998. He joined the School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China, in 2019. His current research involves microwave millimeter and terahertz wave information technology, physical electronics and opto-mechatronics integrated micro-system technology. (Email: jianzhang@uestc.edu.cn)
Received Date: 2021-07-24
Accepted Date: 2021-12-26

Available Online: 2022-02-17

Publish Date: 2022-05-05

Abstract

Abstract

The research on high power 170 GHz frequency doubler based on the GaAs Schottky diodes is proposed in this paper. This basic doubler cell is developed with a 50- μ m-thick, 600- μ m-wide, and 2-mm-long AlN substrate with high thermal conductivity to reduce the thermal effect. Besides, power combined frequency doubler has been fabricated to improve the power capacity by a factor of two. Great agreement has been achieved between the simulated results based on electro-thermal model and measured performances. At room temperature, the 3 dB bandwidth of the single doubler based on GaAs Schottky diodes is 11.8 % over the frequency range from 160 to 180 GHz with pumping power of 150 to 330 mW. And the peak efficiency of the doubler is measured to be 33.1 % , while the maximum output power is 101.7 mW at 174.08 GHz. As for power combined circuit, the best efficiency is 30.1 % with a related output power of 204.6 mW. The proposed methods of developing high power multipliers can be applied in higher frequency band in the future.
- Schottky diode,
- Frequency doubler,
- Power-combined,
- Thermal dissipation

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References(14)

References

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