Research on Silicon-Based Terahertz Communication Integrated Circuits

ZHOU Peigen; CHEN Jixin; TANG Siyuan; YU Jiayang; WANG Chen; LI Huanbo; LU Haiyan; YAN Pinpin; HOU Debin; CHEN Zhe; HONG Wei

doi:10.1049/cje.2021.00.253

Volume 31 Issue 3

May 2022

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Article Navigation > Chinese Journal of Electronics > 2022 > 31(3): 516-533

ZHOU Peigen, CHEN Jixin, TANG Siyuan, et al., “Research on Silicon-Based Terahertz Communication Integrated Circuits,” Chinese Journal of Electronics, vol. 31, no. 3, pp. 516-533, 2022, doi: 10.1049/cje.2021.00.253

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ZHOU Peigen, CHEN Jixin, TANG Siyuan, et al., “Research on Silicon-Based Terahertz Communication Integrated Circuits,” Chinese Journal of Electronics, vol. 31, no. 3, pp. 516-533, 2022, doi: 10.1049/cje.2021.00.253

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Research on Silicon-Based Terahertz Communication Integrated Circuits

doi: 10.1049/cje.2021.00.253

1.
State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China
2.
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing 210096, China

Funds: This work was supported in part by the National Natural Science Foundation of China (62101117), the Natural Science Foundation of Jiangsu Province (BK20210206), the Science and Technology on Monolithic Integrated Circuits and Modules Laboratory (614280303011903), and the Fundamental Research Funds for the Central Universities.

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Author Bio:
(corresponding author) received the B.S. degree in radio engineering from Southeast University (SEU), Nanjing, China, in 2015, and Ph.D. degree in electromagnetic field and microwave technique from Southeast University, Nanjing, China, in 2020. Since 2021, he has been with the State Key Lab. of Millimeter Waves, Southeast University, and is currently an Assistant Researcher of the School of Information Science and Engineering. His research interests include silicon-based millimeter-wave/THz on-chip wireless communication/radar phased-array transceivers. (Email: pgzhouseu@seu.edu.cn)

(corresponding author) received the B.S. degree in radio engineering from Southeast University, Nanjing, China, in 1998, and the M.S. and Ph.D. degrees from Southeast University, Nanjing, China, in 2002 and 2006, respectively, all in electromagnetic field and microwave technique. Since 1998, he has been with the Sate Key Lab. of Millimeter Waves, Southeast University, and is currently Professor of School of Information Science and Engineering. His current research interests include microwave and millimeter-wave circuit design and MMIC design. He has authored and co-authored more than 100 papers and presented invited papers at ICMMT2016, IMWS2012, GSMM2011. He is the winner of 2016 Keysight Early Career Professor Award. He has served as TPC Co-chair of HSIC2012, UCMMT2012, LOC Co-chair of APMC2015, Session Co-chair of iWAT2011, ISSSE2010, APMC2007, and Reviewer for IEEE MTT and IEEE MWCL. (Email: jxchen@seu.edu.cn)

received the B.S. and M.S. degrees in Xidian University, in 2018 and 2021, respectively. He is currently pursuing the Ph.D. degree in the School of Information Science and Engineering, State Key Laboratory of Millimeter Waves, Southeast University, Nanjing, China. His current research interests include multi-mode antennas and terahertz antennas

is currently working toward the Ph.D. degree in the School of Information Science and Engineering, State Key Laboratory of Millimeter Waves, Southeast University, Nanjing, China. His current research interests include millimeter-wave/terahertz integrated circuits for radar and high speed communication

received the B.S. degree in radio engineering from Southeast University (SEU), Nanjing, China, in 2015, and Ph.D. degree in electromagnetic field and microwave technique from Southeast University, Nanjing, China, in 2021. His current research interests include millimeter-wave integrated circuits for radar and communication

received the B.S. degree from the School of Information Science and Engineering, Southeast University, Nanjing, China, in 2016, and Ph.D. degree in electromagnetic field and microwave technique from Southeast University, Nanjing, China, in 2021. His current research is focused on silicon-based mm-wave and terahertz (THz) integrated circuits and systems for high-speed wireless communication and radar imaging

is currently working toward the Ph.D. degree in electromagnetic field and microwave technique with the School of Information Science and Engineering, Southeast University. She is also with Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing, China. Her research interests include testing, device modeling and chip design techniques for terahertz communications

received the B.S. degree in radio engineering and M.S. and Ph.D. degrees in electromagnetic field and microwave technique from Southeast University, Nanjing, China, in 2000, 2004, and 2009, respectively. Since 2000, she has been with the Sate Key Lab. of Millimeter Waves, Southeast University, and is currently Associate Professor with the School of Information Science and Engineering. Her current research interests include microwave and millimeter-wave circuit design and monolithic microwave integrated circuit (MMIC) design

received the B.S. degree from the School of Physical Electronics, University of Electronic Science and Technology of China (UESTC), Chengdu China, in 2007, and the Ph.D. degree from the School of Information Science and Technology, Southeast University, Nanjing, China, in 2013. Since 2013, he has been with the Sate Key Lab. of Millimeter Waves, Southeast University, and is currently Lecturer of School of Information Science and Engineering. In 2009 and 2010 to 2012, He was with the Blekinge Institute of Technology (BTH) in Sweden and also with the Institute of Microelectronics (IME), Agency for Science, Technology and Research (A*STAR), Singapore, as an exchange student. He has authored over 20 technical publications. He has received the “Jiangsu Excellent 100 Doctoral Dissertation” prize in 2014. His current research interests include silicon-based/GaAs millimeter-wave/THz on-chip components, antennas and integrated circuits

received the B.S. degree in electronic information engineering from the University of Electronic Science and Technology of China, Chengdu, China, in 2006, and the Ph.D. degree in electromagnetic field and microwave technology from Southeast University, Nanjing, China, in 2014. Since 2014, he has been with the State Key Laboratory of Millimeter Waves, School of Information Science and Engineering, Southeast University. His research interests include the design of millimeter-wave wireless transceiver systems and frequency generations for wireless communications in nanometer complementary metal-oxide-semiconductor technology

received the B.S. degree from the University of Information Engineering, Zhengzhou, China, in 1982, and the M.S. and Ph.D. degrees from Southeast University, Nanjing, China, in 1985 and 1988, respectively, all in radio engineering. Since 1988, he has been with the State Key Laboratory of Millimeter Waves and serves for the Director of the lab since 2003, and is currently a Professor of the School of Information Science and Engineering, Southeast University. In 1993, 1995, 1996, 1997 and 1998, he was a short-term Visiting Scholar with the University of California at Berkeley and at Santa Cruz, respectively. He has been engaged in numerical methods for electromagnetic problems, millimeter wave theory and technology, antennas, RF technology for wireless communications etc. He has authored and co-authored over 300 technical publications and authored two books. He twice awarded the National Natural Prizes, thrice awarded the first-class Science and Technology Progress Prizes issued by the Ministry of Education of China and Jiangsu Province Government etc. Besides, he also received the Foundations for China Distinguished Young Investigators and for Innovation Group issued by NSF of China. Dr. Hong is a Fellow of IEEE, Fellow of CIE, the Vice Presidents of the CIE Microwave Society and Antenna Society, the Chair of the IEEE MTT-S/AP-S/EMC-S Joint Nanjing Chapter, and was an elected IEEE MTT-S AdCom Member during 2014-2016. He served as the Associate Editor of the IEEE Trans. on MTT from 2007 to 2010, one of the Guest editors for the 5G special issue of IEEE Trans. on AP in 2017
Received Date: 2021-07-27
Accepted Date: 2021-11-15

Available Online: 2022-02-19

Publish Date: 2022-05-05

Abstract

Abstract

With the increasing number of users and emerging new applications, the demand for mobile data traffic is growing rapidly. The limited spectrum resources of the traditional microwave and millimeter-wave frequency bands can no longer support the future wireless communication systems with higher system capacity and data throughput. The terahertz (THz) frequency bands have abundant spectrum resources, which can provide sufficient bandwidth to expand channel capacity and increase transmission data rate. In addition, with the rapid development of silicon-based semiconductor technology, its characteristic size keeps decreasing, and the radio frequency performance of active devices is gradually approaching the performance of III-V semiconductor technology. The realization of THz communication systems based on low-cost, high-stability, and easy-to-integrate silicon-based process has become a feasible solution. This review summarizes the reported silicon-based THz communication systems, as well as the key sub-circuit chips in these systems, including the local oscillator, power amplifier, low noise amplifier, on-chip antenna and transceiver chip, etc.
- Communication system,
- Integrated circuit,
- Local oscillator,
- On-chip antenna,
- Power amplifier,
- Terahertz

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References(194)

References

[1]	Chao Xu, N. Ishikawa, and R. Rajashekar, “Sixty years of coherent versus non-coherent tradeoffs and the road from 5G to wireless futures,” IEEE Access, vol.7, pp.178246–178299, 2019. doi: 10.1109/ACCESS.2019.2957706
[2]	X. You, C. Wang, J. Huang, et al., “Towards 6G wireless communication networks: Vision, enabling technologies, and new paradigm shifts,” Science China Information Science, vol.64, article no.110301, 2021.
[3]	Z. Chen, X. Ma, B. Zhang, et al., “A survey on terahertz communications,” China Communciations, vol.16, no.2, pp.1–35, 2019.
[4]	B. Yang, “Research on 5G millimeter wave massive MIMO transceiver system and its key technologies,” Ph.D.Thesis, Southeast University, China, 2018.
[5]	Michael Cooney, “Cisco predicts nearly 5 zettabytes of IP traffic per year by 2022,” available at: https://www.networkworld.com/article/3323063/cisco-predicts-nearly-5-zettabytes-of-ip-traffic-per-year-by-2022.html, 2018-11-28.
[6]	H. Li, “Research on silicon-based millimeter wave terahertz chips applied in phased array system,” Ph.D.Thesis, Southeast University, China, 2018.
[7]	D. Lopez-Perez, M. Ding, H. Claussen, et al., “Towards 1 Gbps/UE in cellular systems: Understanding ultra-dense small cell deployments,” IEEE Communications Surveys Tutorials, vol.17, no.4, pp.2078–2101, 2015. doi: 10.1109/COMST.2015.2439636
[8]	A. Ometov, “Fairness characterization in contemporary IEEE 802.11 deploments with saturated traffic load,” in Proc. of 15th Conference of Open Innovations Association FRUCT, St. Petersburg, Russia, pp.99–104, 2014 .
[9]	A Ometov, S. Andreev, A. Turlikov, et al., “Characterizing the effect of pocket losses in current WLAN deployments,” in Proc. of 13th Int. Conf. on ITS Telecommunications (ITST), Tampere, Finland, pp.331–336, 2013 .
[10]	A. Pyattaev, J. Hosek, K. Johnsson, et al., “3GPP LTE-assisted WiFi-direct: Trial implementation of live D2D technology,” TRI Journal, vol.37, no.5, pp.877–887, 2015.
[11]	J. Ma, “Terahertz wireless communication through atmospheric turbulence and rain,” Ph.D.Thesis, The State University of New Jersey-Newark, 2015.
[12]	T. S. Rappaport, Y. Xing, O. Kanhere, et al., “Wireless communications and applications above 100 GHz: Opportunities and challenges for 6G and beyond,” IEEE Access, vol.7, pp.78729–78757, 2019.
[13]	X. Lu, S. Venkatesh, and H. Saeidi, “A review on applications of integrated terahertz systems,” China Communciations, vol.18, no.5, pp.175–201, 2021. doi: 10.23919/JCC.2021.05.011
[14]	H. Rücker, B. Heinemann, and A. Fox, “Half-Terahertz SiGe BiCMOS technology,” IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Santa Clara, CA, USA, pp.133–136, 2012: .
[15]	Y. Zhang, W. Liang, X. Jin, et al., “3.2-mW ultra-low-power 173-207-GHz amplifier with 130-nm SiGe HBTs operating in saturation,” IEEE Journal of Solid-State Circuits, vol.55, no.6, pp.1471–1481, 2020.
[16]	W. Liang, “Investigations on silicon-based millimeter-wave/sub-millimeter-wave frequency source and related integrated circuits,” Ph.D.Thesis, Southeast University, China, 2014.
[17]	F. Ahmad, M. Furqan, B. Heinemann, et al., “A SiGe D-band fundamental wave VCO with 9 dBm output power and 185 dBc/Hz FOMT,” 2015 IEEE Compound Semiconductor Integrated Circuits Symp. (CSICS), New Orleans, LA, USA, pp.1–4, 2015 .
[18]	M. Hossain, N. Weimann, W. Heinrich, et al., “Highly efficient D-band fundamental frequency source on InP-DHBT technology,” 2018 48th Europe Microwave Conference (EuMC), Madrid, Spain, pp.1005–1008, 2018 .
[19]	U. Ali, G. Fischer, and A. Thiede, “Low power fundamental VCO design in D-band using 0.13 μm SiGe BiCMOS Technology,” 2015 German Microwave Conference (GeMIC), Nuremberg, Germany, pp.359–362, 2015 .
[20]	S. Zeinolabedinzadeh, P. Song, M. Kaynak, et al., “Low phase noise and high output power 367 GHz and 154 GHz signal sources in 130 nm SiGe HBT technology,” 2014 IEEE MTT-S International Microwave Symposium (IMS), Tampa, FL, USA, pp.1–4, 2014.
[21]	U. Ali, M. Bober, and A. Thiede, “Design of voltage controlled oscillators (VCOs) in D-band and their phase noise measurements using frequency down-conversion,” 2016 11th Europe Microwave Integrated Circuits Conference (EuMIC), London, UK, pp.317–320, 2016.
[22]	S. Muralidharan, K. Wu, and M. Hella, “A 110-132 GHz VCO with 1.5 dBm peak output power and 18.2 % tuning range in 130 nm SiGe BiCMOS for D-band transmitters,” 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Sysyems. (SiRF), Austin, TX, USA, pp.64–66, 2014.
[23]	B. Khamaisi and E. Socher, “A 159-169 GHz frequency source with 1.26 mW peak output power in 65 nm CMOS,” 2013 Europe Microwave Conference, Nuremberg, Germany, pp.536–539, 2014.
[24]	Y. Chang and H. Lu., “A D-band wide tuning range VCO using switching transformer,” 2017 IEEE MTT-S International Microwave Symposium (IMS), Honololu, HI, USA, pp.1356–1359, 2017.
[25]	H. Holisaz and S. S. Naeini, “A low noise D-Band VCO with a wide bandwidth and a steady output power,” IEEE Microwave Wireless Components Letter, vol.25, no.11, pp.742–744, 2015. doi: 10.1109/LMWC.2015.2481083
[26]	C. Bredendiek, N. Pohl, K. Aufinger, et al., “An ultra-wideband D-band signal source chip using a fundamental VCO with frequency doubler in a SiGe bipolar technology,” 2012 IEEE Radio Frequency Integrated Circuits (RFIC), Montreal, QC, Canada, pp.83–86, 2012.
[27]	H. Wang, T. Huang, N. S. Mannem, et al, “Power amplifiers performance survey 2000-present,” available at: https://gems.ece.gatech.edu/PA_survey.html, 2021
[28]	Y. M. Tousi, O. Momeni, and E. Afshar, “A 283-to-296GHz VCO with 0.76mW peak output power in 65nm CMOS,” 2012 IEEE International Solid-State Circuits Conference, San Francisco, CA, USA, pp.258−260, 2012.
[29]	J. Sharma and H. Krishnaswamy, “216- and 316-GHz 45-nm SOI CMOS Signal sources based on a maximum-gain ring oscillator topology,” IEEE Trans. on Microwave Theory and Techniques, vol.61, no.1, pp.492–504, 2013. doi: 10.1109/TMTT.2012.2230019
[30]	P. Chiang, O. Momeni, and P. Heydari, “A 200-GHz inductively tuned VCO with 7-dBm output power in 130-nm SiGe BiCMOS,” IEEE Transactions on Microwave Theory and Techniques, vol.61, no.10, pp.3666–3673, 2013. doi: 10.1109/TMTT.2013.2279779
[31]	N. Landsberg and E. Socher, “240 GHz and 272 GHz fundamental VCOs using 32 nm CMOS technology,” IEEE Trans. on Microwave Theory and Tech., vol.61, no.12, pp.4461–4471, 2013. doi: 10.1109/TMTT.2013.2288942
[32]	M. Adnan and E. Afshar, “A 247-to-263.5 GHz VCO with 2.6 mW peak output power and 1.14% DC-to-RF efficiency in 65 nm bulk CMOS,” 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), San Francisco, CA, USA, pp.262−263, 2014.
[33]	C. Jiang, A. Cathelin, and E. Afshari, “An efficient 210 GHz compact harmonic oscillator with 1.4 dBm peak output power and 10.6% tuning range in 130 nm BiCMOS,” 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), San Francisco, CA, USA, pp.194−197, 2016.
[34]	A. Mostajeran and E. Afshari, “An ultra-wideband harmonic radiator with a tuning range of 62 GHz (28.3%) at 220 GHz,” 2017 IEEE Radio Frequency Integrated Circuits Symposium, Honolulu, HI, USA, pp.164−167, 2017.
[35]	R. Kananizadeh and O. Momeni, “High-power and high-efficiency millimeter-wave harmonic oscillator design, exploiting harmonic positive feedback in CMOS,” IEEE Trans. on Microwave Theory and Tech., vol.65, no.10, pp.3922–3936, 2017. doi: 10.1109/TMTT.2017.2690291
[36]	R. Kananizadeh and O. Momeni, “A 190-GHz VCO with 20.7% tuning range employing an active mode switching block in a 130 nm SiGe BiCMOS,” IEEE Journal of Solid-State Circuits, vol.52, no.8, pp.2094–2104, 2017. doi: 10.1109/JSSC.2017.2689031
[37]	H. Khatibi, S. Khiyabani, A. Cathelin, et al., “A 195 GHz single-transistor fundamental VCO with 15.3% DC-to-RF efficiency, 4.5 mW output power, phase noise FoM of −197 dBc/Hz and 1.1% tuning range in a 55 nm SiGe process,” 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Honolulu, HI, USA, pp.152−155, 2017.
[38]	H. Khatibi, S. Khiyabani, and E. Afshari, “An Efficient high-power fundamental oscillator above fmax/2: A systematic design,” IEEE Transactions on Microwave Theory and Techniques, vol.65, no.11, pp.4176–4189, 2017. doi: 10.1109/TMTT.2017.2702116
[39]	F. Ahmed, M. Furqan, B. Heinemann, et al., “0.3-THz SiGe-based high-efficiency push-push VCOs with > 1-mW peak output power employing common-mode impedance enhancement,” IEEE Transactions on Microwave Theory and Techniques, vol.66, no.3, pp.1384–1398, 2018. doi: 10.1109/TMTT.2017.2767593
[40]	Hossein Jalili and Omeed Momeni, “A standing-wave architecture for scalable and wideband millimeter-wave and terahertz coherent radiator arrays,” IEEE Trans. on Microwave Theory and Tech., vol.66, no.3, pp.1597–1609, 2018. doi: 10.1109/TMTT.2017.2762658
[41]	H. Wang, J. Chen; James T. S. Do, et al., “High-efficiency millimeter-wave single-ended and differential fundamental oscillators in CMOS,” IEEE Journal of Solid-State Circuits, vol.53, no.8, pp.2151–2163, 2018. doi: 10.1109/JSSC.2018.2837863
[42]	H. Jalili and O. Momeni, “A 230-GHz high-power and wideband coupled standing wave VCO in 65-nm CMOS,” IEEE Journal of Solid-State Circuits, vol.55, no.3, pp.547–556, 2020. doi: 10.1109/JSSC.2019.2949260
[43]	Y. Shu, H. J. Qian, and X. Luo, “A 169.6-GHz low phase noise and wideband hybrid mode-switching push-push oscillator,” IEEE Transactions on Microwave Theory and Techniques, vol.67, no.7, pp.2769–2781, 2019. doi: 10.1109/TMTT.2019.2913642
[44]	T. Chi, H. Wang, M. Huang, et al., “A bidirectional lens-free digital-bits-in/-out 0.57 mm² Terahertz nano-radio in CMOS with 49.3 mW peak power consumption supporting 50cm Internet-of-Things communication,” 2017 IEEE Custom Integrated Circuits Conference (CICC), Austin, TX, USA, pp.1−4, 2017.
[45]	B. Philippe and P. Reynaert, “A 126GHz, 22.5% Tuning, 191dBc/Hz FOMt 3rd harmonic extracted class-F oscillator for D-band applications in 16nm FinFET,” 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Los Angeles, CA, USA, pp.263−266, 2017.
[46]	Z. Ahmad, M. Lee, and K. O. Kenneth, “20.5 1.4THz, -13dBm-EIRP frequency multiplier chain using symmetric- and asymmetric-CV varactors in 65 nm CMOS,” 2016 IEEE Int. Solid-State Circuits Conference, San Francisco, CA, USA, pp.350−351, 2016.
[47]	H. Aghasi, A. Cathelin, and E. Afshari, “A 0.92-THz SiGe power radiator based on a nonlinear theory for harmonic generation,” IEEE Journal of Solid-State Circuits, vol.52, no.2, pp.406–422, 2017. doi: 10.1109/JSSC.2016.2627547
[48]	Z. Ahmad and K. O. Kenneth, “0.65-0.73THz quintupler with an on-chip antenna in 65-nm CMOS,” 2015 IEEE Symposium on VLSI Circuits (VLSI Circuits), Kyoto, Japan, pp.C310−C311, 2015.
[49]	T. Chi, J. Luo, S. Hu, et al., “A multi-phase sub-harmonic injection locking technique for bandwidth extension in silicon-based THz signal generation,” IEEE Journal of Solid-State Circuits, vol.50, no.8, pp.1861–1873, 2015. doi: 10.1109/JSSC.2015.2422074
[50]	R. Han and Ehsan Afshari, “A high-power broadband passive terahertz frequency doubler in CMOS,” IEEE Transactions on Microwave Theory and Techniques, vol.61, no.3, pp.1150–1160, 2013. doi: 10.1109/TMTT.2013.2243465
[51]	F. Golguk, O. D. Gurbuz, and G. M. Rebeiz, “A 0.39–0.44 THz 2x4 amplifier-quadrupler array with peak EIRP of 3–4 dBm,” IEEE Trans. on Microwave Theory and Tech., vol.61, no.12, pp.4483–4491, 2013. doi: 10.1109/TMTT.2013.2287493
[52]	E. Öjefors, B. Heinemann, and U. R. Pfeiffer, “Active 220- and 325-GHz frequency multiplier chains in an SiGe HBT technology,” IEEE Trans. Microwave Theory and Tech., vol.59, no.5, pp.1311–1318, 2011. doi: 10.1109/TMTT.2011.2114364
[53]	P. Zhou, J. Chen, P. Yan, et al., “A 280-325 GHz frequency multiplier chain with 2.5 dBm peak output power,” 2019 IEEE Custom Integrated Circuits Conference (CICC), Austin, TX, USA, pp.1−4, 2019.
[54]	R. B. Yishay and D. Elad, “A 230 GHz quadrupler with 2 dBm output power in 90 nm SiGe BiCMOS technology,” 2016 11th European Microwave Integrated Circuits Conference (EuMIC), London, UK, pp.101−104, 2016.
[55]	N. Sharma, W. Choi, and K. O Kenneth, “160-310 GHz frequency doubler in 65-nm CMOS with 3-dBm peak output power for rotational spectroscopy,” 2016 IEEE Radio Frequency Integrated Circuits (RFIC), San Francisco, CA, USA, pp.186−189, 2016.
[56]	G. Liu, J. Jayamon, J. Buckwalter, et al., “Frequency doublers with 10.2/5.2 dBm peak power at 100/202 GHz in 45 nm SOI CMOS,” 2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Phoenix, AZ, USA, pp.271−274, 2015.
[57]	B. Cetinoneri, Y. A. Atesal, A. Fung, et al., “W-band amplifiers with 6-dB noise figure and milliwatt-level 170-200-GHz doublers in 45-nm CMOS,” IEEE Transactions on Microwave Theory and Techniques, vol.60, no.3, pp.692–701, 2012. doi: 10.1109/TMTT.2011.2165964
[58]	Y. Li, W. Ling Goh, and Y. Xiong, “A frequency doubler/ modulator with 4.5 dBm output power at 170 GHz using SiGe HBTs,” IEEE Microwave Wireless Components Letter, vol.25, no.3, pp.181–183, 2015. doi: 10.1109/LMWC.2015.2390534
[59]	C. Coen, S. Zeinolabedinzadeh, M. Kaynak, et al., “A highly-efficient 138–170 GHz SiGe HBT frequency doubler for power-constrained applications,” 2016 IEEE Radio Frequency Integrated Circuits (RFIC), San Francisco, CA, USA, pp.23−26, 2016.
[60]	M. Kucharski, M. H. Eissa, A. Malignaggi, et al., “D-band frequency quadruplers in BiCMOS technology,” IEEE Journal of Solid-State Circuits, vol.53, no.9, pp.2465–2478, 2018. doi: 10.1109/JSSC.2018.2843332
[61]	A. Bossuet, T. Quémerais, C. Gaquière, et al., “A 10 dBm output power d-band power source with 5 dB conversion gain in BiCMOS 55nm,” IEEE Microwave Wireless Components Letter, vol.26, no.11, pp.930–932, 2016. doi: 10.1109/LMWC.2016.2614969
[62]	T. Chi, J. Papapolymerou, and H. Wang, “A +2.3dBm 124-158GHz class-C frequency quadrupler with folded-transformer based multi-phase driving,” 2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Phoenix, AZ, USA, pp.263−266, 2015.
[63]	J. Sharma,T. Dinc, and H. Krishnaswamy, “A 134 GHz +4 dBm frequency doubler at fmax in 130nm CMOS,” IEEE Microwave Wireless Components Letters, vol.24, no.11, pp.784–786, 2014. doi: 10.1109/LMWC.2014.2348494
[64]	P. Strke, V. Rieß, C. Carta, et al., “Frequency multiplier-by-4 (Quadrupler) with 52dB spurious-free dynamic range for 152GHz to 220GHz (G-Band) in 130nm SiGe,” 2020 IEEE Radio Frequency Integrated Circuits (RFIC), Los Angeles, CA, USA, pp.251−254, 2020.
[65]	S. G. Rao, M. Frounchi, and J. D. Cressler, “A D-band SiGe frequency doubler with a harmonic reflector embedded in a triaxial balun,” 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Los Angeles, CA, USA, pp.255−258, 2020.
[66]	P. Zhou, J. Chen, P. Yan, et al., “A 273.5-312-GHz signal source with 2.3 dBm peak output power in a 130-nm SiGe BiCMOS process,” IEEE Transactions on Terahertz Science and Technology, vol.10, no.3, pp.260–270, 2020. doi: 10.1109/TTHZ.2020.2967240
[67]	IEEE 802.15.3d:2017, IEEE Standard for High Data Rate Wireless Multi-media Networks–Amendment 2: 100 Gb/s Wireless Switched Point-to-Point Physical Layer.
[68]	“Tektronk and IEMN demonstrate 100 Gb/s wireless transmission using the latest IEEE 802.15.3d standard,” available at: http://www.eepw.com.cn/article/201805/380691.htm, 2018-5-29. (in Chinese)
[69]	N. Sarmah, P. Chevalier, and U. R. Pfeiffer, “160GHz power amplifier design in advanced SiGe HBT technologies with Psat in excess of 10 dBm,” IEEE Transactions on Microwave Theory and Techniques, vol.61, no.2, pp.934–947, 2013.
[70]	Z. Xu, Q. J. Gu, and M. F. Chang, “A W-band current combined power amplifier with 14.8 dBm Psat and 9.4% maximum PAE in 65nm CMOS,” 2011 IEEE Radio Frequency Integrated Circuits Symposium, Baltimore, MD, USA, pp.1−4, 2011.
[71]	O. Momeni and E. Afshari, “A high gain 107GHz amplifier in 130nm CMOS,” 2011 IEEE Custom Integrated Circuits Conference (CICC), San Jose, CA, USA, pp.1−4, 2011.
[72]	Q. J. Gu, Z. Xu, and M. F. Chang, “Two-way current-combining W-band power amplifier in 65nm CMOS,” IEEE Trans. Microwave Theory and Tech., vol.60, no.5, pp.1365–1374, 2012. doi: 10.1109/TMTT.2012.2187536
[73]	Z. Wang, P. Chiang, and P. Nazari, “A CMOS 210-GHz fundamental transceiver with OOK modulation,” IEEE Journal of Solid-State Circuits, vol.49, no.3, pp.564–580, 2014. doi: 10.1109/JSSC.2013.2297415
[74]	H. S. Son, J. Y. Jang, D. M. Kang, et al., “A 109GHz CMOS power amplifier with 15.2dBm Psat and 20.3dB Gain in 65nm CMOS technology,” IEEE Microwave Wireless Components Letter, vol.26, no.7, pp.510–512, 2016. doi: 10.1109/LMWC.2016.2574834
[75]	D. Simic and P. Reynaert, “A 14.8dBm 20.3 dB power amplifier for D-band applications in 40nm CMOS,” 2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Philadelphia, PA, USA, pp.232−235, 2018.
[76]	H. S, Son, C. J. Lee, D. M. Kang, et al., “A D-band CMOS power amplifier for wireless chip-to-chip communications with 22.3dB gain and 12.2dBm P1dB in 65nm CMOS technology,” 2018 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), Anaheim, CA, USA, pp.35−38, 2018.
[77]	D. Hou, Y. Xiong, W. Goh, et al., “A D-band cascode amplifier with 24.3dB gain and 7.7 dBm output power in 0.13um SiGe BiCMOS techonology,” IEEE Microwave Wireless Components Letter, vol.22, no.4, pp.191–193, 2012. doi: 10.1109/LMWC.2012.2188624
[78]	H. Lin and G. M. Rebeiz, “A 110-134-GHz SiGe Amplifier with peak output power of 100-120mW,” IEEE Transactions on Microwave Theory and Techniques, vol.62, no.12, pp.2990–3000, 2014. doi: 10.1109/TMTT.2014.2360679
[79]	R. B. Yishay and Danny Elad, “A 17.5dBm D-band power amplifier and doubler chain in SiGe BiCMOS technology,” 2014 9th European Microwave Integrated Circuit Conference, Rome, Italy, pp.53−56, 2014.
[80]	R. B. Yishay and D. Elad, “A 17.8dBm 110-130GHz power amplifier and doubler chain in SiGe BiCMOS technology,” 2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Phoenix, AZ, USA, p.391−394, 2015.
[81]	S. Daneshgar and J. F. Buckwalter, “A 22dBm 0.6mm² D-band SiGe HBT power amplifier using series power combining sub-quarter-wavelength baluns,” 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), New Orleans, LA, USA, pp.1−4, 2015.
[82]	N. Sarmah, K. Aufinger, R. Lachner, et al., “A 200-225GHz SiGe power amplifier with peak Psat of 9.6dBm using wideband power combination,” ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference, Lausanne, Switzerland, pp.193−196, 2016.
[83]	M. Furqan, F. Ahmed, B. Heinemann, et al., “A 15.5dBm 160GHz high-gain power amplfier in SiGe BiCMOS technology,” IEEE Microwave Wireless Components Letter, vol.27, no.2, pp.177–179, 2017. doi: 10.1109/LMWC.2016.2646910
[84]	H. Khatibi, S. Khiyabani, and E. Afshari, “A 173 GHz amplifier with a 18.5 dB power gain in a 130 nm SiGe process: A systematic design of high-gain amplifiers above fmax/2,” IEEE Transactions on Microwave Theory and Techniques, vol.66, no.1, pp.201–204, 2018. doi: 10.1109/TMTT.2017.2727038
[85]	H. Khatibi, S. Khiyabani, and E. Afshari, “A 183 GHz desensitized unbalanced cascode amplifier with 9.5-dB power gain and 10-GHz band width and −2 dBm saturation power,” IEEE Solid-State Circuits Letters, vol.1, no.3, pp.58–61, 2018. doi: 10.1109/LSSC.2018.2827879
[86]	M. H. Eissa and D. Kissinger, “4.5 A 13.5dBm fully integrated 200-to-255 GHz power amplifier with a 4-way power combiner in SiGe: C BiCMOS,” 2019 IEEE International Solid-State Circuits Conference, San Francisco, CA, USA, pp.82−84, 2019.
[87]	P. Starke, C. Carta, and F. Ellinger, “High-linearity 19-dB power amplifier for 140-220 GHz, Saturated at 15 dBm, in 130-nm SiGe,” IEEE Microwave Wireless Components Letter, vol.30, no.4, pp.403–406, 2020. doi: 10.1109/LMWC.2020.2978397
[88]	J. Han, X. Cheng, X. Luo, et al., “A sandwiched-slab-transformer-based SiGe power amplifier operating at W- and D-Bands,” IEEE Microwave Wireless Components Letter, vol.30, no.6, pp.597–600, 2020. doi: 10.1109/LMWC.2020.2986920
[89]	P. Zhou, J. Chen, P. Yan, et al., “A 150-GHz transmitter with 12-dBm peak output power using 130-nm SiGe:C BiCMOS process,” IEEE Transactions on Microwave Theory and Techniques, vol.68, no.7, pp.3056–3067, 2020. doi: 10.1109/TMTT.2020.2989112
[90]	H. Li, J. Chen, D. Hou, et al., “A 250-GHz differential sige amplifier with 21.5-dB gain for sub-THz transmitters,” IEEE Transactions on Terahertz Science and Technology, vol.10, no.6, pp.624–633, 2020. doi: 10.1109/TTHZ.2020.3019361
[91]	X. Li, W. Chen, P. Zhou, et al., “A 250-310 GHz power amplifier with 15-dB Peak gain in 130-nm SiGe BiCMOS process for terahertz wireless system,” IEEE Transactions on Terahertz Science and Technology, vol.12, no.1, pp.1–12, 2022. doi: 10.1109/TTHZ.2021.3099057
[92]	B. Razavi, RF Microelectronics, 2nd Ed., New Jersey: Prentice Hall, pp.40−60, 2011.
[93]	R. B. Yishay, E. Shumaker, and D. Elad, “A 122-150 GHz LNA with 30 dB gain and 6.2 dB noise figure in SiGe BiCMOS technology,” 2015 IEEE 15th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, San Diego, CA, USA, pp.15–17, 2015.
[94]	A. C. Ulusoy, P. Song, W. T. Khan, et al., “A SiGe D-band low-noise amplifier utlizing gain-boosting technique,” IEEE Microwave and Wireless Compon. Letters, vol.25, no.1, pp.61–63, 2015. doi: 10.1109/LMWC.2014.2369992
[95]	D. Fritsche, C. Carta, and F. Ellinger, “A broadband 200 ghz amplifier with 17 db gain and 18 mW DC-power consumption in 0.13 μm SiGe BiCMOS,” IEEE Microwave and Wireless Compon. Letters, vol.24, no.11, pp.790–792, 2014. doi: 10.1109/LMWC.2014.2350691
[96]	P. V. Testa, C. Carta, B. Klein, et al., “A 210-GHz SiGe balanced amplifier for ultrawideband and low-voltage applications,” IEEE Microwave and Wireless Components Letters, vol.27, no.3, pp.287–289, 2017. doi: 10.1109/LMWC.2017.2661715
[97]	P. V. Testa, C. Carta, F. Ellinger, “200-GHz amplifier with 16-dB gain and 6.4-mW power consumption for phased-array receivers,” IEEE Microwave and Wireless Components Letters, vol.28, no.11, pp.1026–1028, 2018. doi: 10.1109/LMWC.2018.2867107
[98]	N. Sarmah, J. Grzyb, K. Statnikov, et al., “A fully integrated 240-GHz direct-conversion quadrature transmitter and receiver chipset in SiGe technology,” IEEE Transactions on Microwave Theory and Techniques, vol.64, no.2, pp.562–574, 2016. doi: 10.1109/TMTT.2015.2504930
[99]	D. Hou, “Research on key components of 130GHz transceiver front end on silicon,” Ph.D.Thesis, Southeast University, China, 2013.
[100]	P. V. Bijumon, Y. M. M. Antar, A. P. Freundorfer, et al., “Dielectric resonator antenna on silicon substrate for system in-chip applications,” IEEE Transactions on Antennas and Propagations, vol.56, no.11, pp.3404–3410, 2008. doi: 10.1109/TAP.2008.2005537
[101]	Y. P. Zhang, M. Sun, and L.H. Guo, “On-chip antennas for 60-GHz radios in silicon technology,” IEEE Trans. on Electron Devices, vol.52, no.7, pp.1664–1668, 2005. doi: 10.1109/TED.2005.850628
[102]	S. Hsu, K. Wei, C. Hsu, et al., “A 60-GHz millimeter-wave CPW-fed Yagi antenna fabricated by using 0.18 μm CMOS technology,” IEEE Electron Device Letters, vol.29, no.6, pp.625–627, 2008. doi: 10.1109/LED.2008.920852
[103]	W. T. Khan, A. Ç. Ulusoy, G. Dufour, et al., “A D-band micromachined end-fire antenna in 130-nm SiGe BiCMOS technology,” IEEE Trans. on Antennas and Propagation, vol.63, no.6, pp.2449–2459, 2015. doi: 10.1109/TAP.2015.2416751
[104]	Y. P. Zhang and D. Liu, “Antenna-on-chip and antenna-in-package solutions to highly integrated millimeter-wave devices for wireless communications,” IEEE Trans. on Antennas and Propagation, vol.57, no.10, pp.2830–2841, 2009. doi: 10.1109/TAP.2009.2029295
[105]	K. T. Chan, A. Chin, Y.D. Lin, et al., “Integrated antennas on Si with over 100 GHz performance, fabricated using an optimized proton implantation process,” IEEE Microwave and Wireless Components Letters, vol.13, no.11, pp.487–489, 2003. doi: 10.1109/LMWC.2003.817146
[106]	H. M. Cheema and A. Shamim, “The last barrier: On-chip antennas,” IEEE Microwave Magazine, vol.14, no.1, pp.79–91, 2013. doi: 10.1109/MMM.2012.2226542
[107]	S. Pan and F. Capolino, “Design of a CMOS on-chip slot antenna with extremely flat cavity at 140 GHz,” IEEE Antennas and Wireless Propagat. Lett., vol.10, pp.827–830, 2011. doi: 10.1109/LAWP.2011.2163291
[108]	S. Sinha, M. Libois, K. Vaesen, et al., “Miniaturized (127 to 154) GHz dipole arrays in 28 nm bulk CMOS with enhanced efficiency,” IEEE Transactions on Antennas and Propagation, vol.69, no.3, pp.1414–1426, 2021. doi: 10.1109/TAP.2020.3031411
[109]	J. Grzyb, K. Statnikov, N. Sarmah, et al., “A 210-270-GHz circularly polarized FMCW radar with a single-lens-coupled SiGe HBT chip,” IEEE Trans. on Terahertz Science and Technology, vol.6, no.6, pp.771–783, 2016. doi: 10.1109/TTHZ.2016.2602539
[110]	D. Hou, W. Hong, W. Goh, et al., “D-band on-chip higher-order-mode dielectric-resonator antennas fed by half-mode cavity in CMOS technology,” IEEE Antennas and Propagation Magazine, vol.56, no.3, pp.80–89, 2014. doi: 10.1109/MAP.2014.6867684
[111]	W. Shin, O. Inac, Y. Ou, et al., “A 108-114 GHz 4 × 4 wafer-scale phased array transmitter with high-efficiency on-chip antennas,” IEEE Journal of Solid-State Circuits, vol.48, no.9, pp.2041–2055, 2013. doi: 10.1109/JSSC.2013.2260097
[112]	N. Deferm and P. Reynaert, “A 120 GHz fully integrated 10 Gb/s short-range star-QAM wireless transmitter with on-chip bondwire antenna in 45 nm low power CMOS,” IEEE Journal of Solid-State Circuits, vol.49, no.7, pp.1606–1616, 2014. doi: 10.1109/JSSC.2014.2319250
[113]	N. Buadana, S. Jameson, and E. Socher, “A multiport chip-scale dielectric resonator antenna for CMOS THz transmitters,” IEEE Transactions on Microwave Theory and Techniques, vol.68, no.9, pp.3621–3632, 2020. doi: 10.1109/TMTT.2020.2993845
[114]	R. Hahnel, B. Klein, and D. Plettemeier, “Integrated Pseudo-Lens Structures for On-Chip Antennas at 180 GHz,” 2016 International Symposium on Antennas and Propagation (ISAP), Okinawa, Japan, pp.784–785, 2016.
[115]	M. Hitzler, L. Boehm, W. Mayer, et al., “Radiation pattern optimization for QFN packages with on-chip antennas at 160 GHz,” IEEE Transactions on Antennas and Propagation, vol.66, no.9, pp.4552–4562, 2018. doi: 10.1109/TAP.2018.2846812
[116]	X.-D. Deng, Y. Li, H. Tang, et al., “Dielectric loaded end-fire antennas using standard silicon technology,” IEEE Transactions on Antennas and Propagation, vol.65, no.6, pp.2797–2807, 2017. doi: 10.1109/TAP.2017.2673800
[117]	M. Uzunkol, O. D. Gurbuz, F. Golcuk, et al., “A 0.32 THz SiGe 4×4 imaging array using high-efficiency on-chip antennas,” IEEE Journal of Solid-State Circuits, vol.48, no.9, pp.2056–2066, 2013. doi: 10.1109/JSSC.2013.2262739
[118]	K. Sengupta, D. Seo, L. Yang, et al., “Silicon integrated 280 GHz imaging chipset with 4×4 SiGe receiver array and CMOS source,” IEEE Transactions on Terahertz Science and Technology, vol.5, no.3, pp.427–437, 2015. doi: 10.1109/TTHZ.2015.2414826
[119]	Samsung Research, “The next hyper-connected experience for all,” available at: https://news.sumsung.com/global/samsungs-6g-white-paper-lays-out-the-companys-vision-for-the-next-generation-of-communications-technology, 2020.
[120]	D. del Rio, I. Gurutzeaga, A. Rezola, et al., “A wideband and high-linearity E-Band transmitter integrated in a 55nm SiGe technology for backhaul point-to-point 10Gb/s links,” IEEE Transactions on Microwave Theory and Techniques, vol.65, no.8, pp.2990–2001, 2011.
[121]	C. J. Lee, S. H. Kim, H. S. Son, et al., “A 120 GHz I/Q transmitter frontend in a 40 nm CMOS for wireless chip to chip communication,” 2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Philadelphia, PA, USA, pp.192−195, 2018.
[122]	David Fritsche, Paul Stärke, Corrado Carta, and Frank Ellinger, “A low-power SiGe BiCMOS 190GHz transceiver chipset with demonstrated data rates up to 50 Gbit/s using on-chip antennas,” IEEE Transactions on Microwave Theory and Techniques, vol.65, no.9, pp.3312–3323, 2017. doi: 10.1109/TMTT.2017.2677908
[123]	K. Katayama, K. Takano, S. Amakawa, et al., “A 300 GHz CMOS transmitter with 32-QAM 17.5 Gb/s/ch capability over six channels,” IEEE Journal of Solid-State Circuits, vol.51, no.12, pp.3037–3048, 2016. doi: 10.1109/JSSC.2016.2602223
[124]	S. Hara, K. Katayama, K. Takano, et al., “A 32Gbit/s 16QAM CMOS receiver in 300GHz band,” 2017 IEEE MTT-S International Microwave Symposium (IMS), Honololu, HI, USA, pp.1703−1706, 2017.
[125]	K. Takano, K. Katayama, S. Amakawa, et al., “56-Gbit/s 16-QAM wireless link with 300-GHz-band CMOS transmitter,” 2017 IEEE MTT-S International Microwave Symposium (IMS), Honololu, HI, USA, pp.793−796, 2017.
[126]	M. Fujishima, et al, “A 300GHz-band wireless transceiver using Si-CMOS integrated circuits,” 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM), San Juan, PR, USA, pp.167−168, 2017.
[127]	K. Takano, K. Katayama, S. Amakawa, et al., “Wireless digital data transmission from a 300 GHz CMOS transmitter,” Electronics Letters, vol.52, no.15, pp.1353–1355, 2016.
[128]	R. Dong, S. Hara, I. Watanabe, et al., “Power spectrum analysis of a tripler-based 300-GHz CMOS up-conversion mixer,” 2016 46th European Microwave Conference (EuMC), London, UK, pp.345−348, 2016.
[129]	K. Takano, S. Hara, K. Katayama, et al., “Quintic mixer: A subharmonic up-conversion mixer for THz transmitter supporting complex digital modulation,” 2016 IEEE MTT-S International Microwave Symposium (IMS), San Francisco, CA, USA, pp.1−3, 2016.
[130]	K. Takano, K. Katayama, S. Amakawa, et al., “A 300-GHz 64-QAM CMOS transmitter with 21-Gb/s maximum per-channel data rate,” 2016 11th European Microwave Integrated Circuits Conference, London, UK, pp.193−196, 2016.
[131]	S. Lee, S. Amakawa, T. Yoshida, et al., “300-GHz CMOS-based wireless link using 40-dBi cassegrain antenna for IEEE standard 802.15.3d,” 2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), Hiroshima, Japan, pp.136−138, 2020.
[132]	S. Lee, S. Hara,T. Yoshida, et al., “An 80-Gb/s 300-GHz-band single-chip CMOS transceiver,” IEEE Journal of Solid-State Circuits, vol.54, no.12, pp.3577–3578, 2019. doi: 10.1109/JSSC.2019.2944855
[133]	M. Fujishima, “Ultrahigh-speed one-chip CMOS transceiver with 300-GHz band,” 2019 IEEE 13th International Conference on ASIC (ASICON), Chongqing, China, pp.1−4, 2019.
[134]	S. Amakawa and M. Fujishima, “300-GHz-band CMOS transmitter and receiver modules with WR-3.4 waveguide interface,” 2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G), Atlanta, GA, USA, pp.1−3, 2019.
[135]	S. Lee, M. Fujita, M. Toyoda, et al., “Effect of an electromagnetic wave absorber on 300-GHz short-range wireless communications,” 2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), Hiroshima, Japan, pp.94−96, 2020.
[136]	H. Hamada, T. Kosugi, H. Song, et al., “20-Gbit/s ASK wireless system in 300-GHz-band and front-ends with InP MMICs,” 2016 URSI Asia-Pacific Radio Science Conference (URSIAP-RASC), Seoul, Korea (South), pp.326−329, 2016.
[137]	H. Hamada, T. Kosugi, H. Song, et al., “300-GHz band 20-Gbps ASK transmitter module based on InP-HEMT MMICs,” 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), New Orleans, LA, USA, pp.1−4, 2015.
[138]	T. Tajima, T. Kosugi, H. Song, et al., “Terahertz MMICs and antenna-in-package technology at 300 GHz for KIOSK download system,” Journal of Infrared, Millimeter, and Terahertz Waves, vol.37, no.12, pp.1213–1224, 2016. doi: 10.1007/s10762-016-0313-6
[139]	H. Song, T. Kosugi, H. Hamada, et al., “Demonstration of 20-Gbps wireless data transmission at 300 GHz for KIOSK instant data downloading applications with InP MMICs,” 2016 IEEE MTT-S International Microwave Symposium (IMS), San Francisco, CA, USA, pp.1−4, 2016.
[140]	H. Song, J. Kim, K. Ajito, et al., “50-Gb/s direct conversion QPSK modulator and demodulator MMICs for terahertz communications at 300 GHz,” IEEE Trans. on Microwave Theory and Techniques, vol.62, no.3, pp.600–609, 2014. doi: 10.1109/TMTT.2014.2300844
[141]	H. Hamada, T. Fujimura, I. Abdo, et al., “300-GHz. 100-Gb/s InP-HEMT wireless transceiver using a 300-GHz fundamental mixer,” 2018 IEEE MTT-S International Microwave Symposium (IMS), Philadelphia, PA, USA, pp.14801483, 2018.
[142]	H. Hamada, T. Tsutsumi, G. Itami, et al., “300-GHz 120-Gb/s wireless transceiver with highoutput-power and high-gain power amplifier based on 80-nm InP-HEMT technology,” 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nashville, TN, USA, pp.1−4, 2019.
[143]	H. Hamada, T. Tsutsumi, H. Matsuzaki, et al., “300-GHz-band 120-Gb/s wireless front-end based on InP-HEMT PAs and mixers,” IEEE Journal of Solid-State Circuits, vol.55, no.9, pp.2316–2335, 2020. doi: 10.1109/JSSC.2020.3005818
[144]	I. Abdo, T. Fujimura, T. Miura, et al., “A 300 GHz Wireless Transceiver in 65 nm CMOS for IEEE802.15.3d Using Push-Push Subharmonic Mixer,” 2020 IEEE MTT-S International Microwave Symposium (IMS), Los Angeles, CA, USA, pp.623−626, 2020.
[145]	P. Rodriguez-Vazquez, J. Grzyb, B. Heinemann, et al., “A 16-QAM 100-Gb/s 1-M wireless link with an EVM of 17% at 230 GHz in an SiGe technology,” IEEE Microwave and Wireless Components Letters, vol.29, no.4, pp.297–299, 2019. doi: 10.1109/LMWC.2019.2899487
[146]	J. Grzyb, P. R. Vazquez, N. Sarmah, et al., “High data-rate communication link at 240 GHz with on-chip antenna-integrated transmitter and receiver modules in SiGe HBT technology,” 2017 11th European Conference on Antennas and Propagation (EUCAP), Paris, France, pp.1369−1373, 2017.
[147]	P. Rodríguez-Vázquez, N. Sarmah, K. Aufinger, et al., “An OOK-modulator at 240 GHz with 20 GHz bandwidth,” 2016 German Microwave Conference (GeMiC), Bochum, Germany, pp.345−348, 2016.
[148]	P. Rodríguez-Vázquez, J. Grzyb, B. Heineman, et al., “Optimization and performance limits of a 64-QAM wireless communication link at 220-260 GHz in a SiGe HBT technology,” 2019 IEEE Radio and Wireless Symposium (RWS), Orlando, FL, USA, pp.1−3, 2019.
[149]	P. Rodríguez-Vázquez, J. Grzyb, B. Heinemann, et al., “Performance evaluation of a 32-QAM 1-meter wireless link operating at 220–260 GHz with a data-rate of 90 Gbps,” 2018 Asia-Pacific Microwave Conf. (APMC), Kyoto, Japan, pp.723−725, 2018.
[150]	P. Rodriguez-Vazquez, J. Grzyb, B. Heinemann, et al., “A QPSK 110-Gb/s Polarization Diversity MIMO Wireless Link With a 220-255 GHz Tunable LO in a SiGe HBT Technology,” IEEE Transactions on Microwave Theory and Techniques, vol.68, no.9, pp.3834–3851, 2020. doi: 10.1109/TMTT.2020.2986196
[151]	Ingmar Kallfass, F. Boes, T. Messinger, et al., “64 Gbit/s transmission over 850 m fixed wireless link at 240 GHz carrier frequency,” Journal of Infrared, Millimeter, and Terahertz Waves, vol.36, no.2, pp.221–233, 2015. doi: 10.1007/s10762-014-0140-6
[152]	J. Antes, S. König, A. Leuther, et al., “220 GHz wireless data transmission experiments up to 30 Gbit/s,” 2012 IEEE/MTT-S International Microwave Symposium Digest, Montreal, QC, Canada, pp.1−3, 2012.
[153]	Sten E. Gunnarsson, Niklas Wadefalk, Jan Svedin, et al., “A 220 GHz single-chip receiver MMIC with integrated antenna,” IEEE Microwave and Wireless Components Letters, vol.18, no.4, pp.284–286, 2008. doi: 10.1109/LMWC.2008.918959
[154]	D. Lopez-Diaz, A. Tessmann, A. Leuther, et al., “A 240 GHz quadrature receiver and transmitter for data transmission up to 40 Gbit/s,” 2013 European Microwave Conference, Nuremberg, Germany, pp.1411−1414, 2013.
[155]	D. Lopez-Diaz, I. Kallfass, A. Tessmann, et al., “A subharmonic chipset for gigabit communication around 240 GHz,” 2012 IEEE/MTT-S International Microwave Symposium Digest, Montreal, QC, Canada, pp.1−3, 2012.
[156]	I. Kallfass, J. Antes, T. Schneider, et al., “All active MMIC-based wireless communication at 220 GHz,” IEEE Transactions on Terahertz Science and Technology, vol.1, no.2, pp.477–487, 2011. doi: 10.1109/TTHZ.2011.2160021
[157]	J. Antes, D. Lopez-Diaz, A. Tessmann, et al., “MMIC based wireless data transmission of a 12.5 Gbit/s signal using a 220 GHz carrier,” 2001 41st European Microwave Conference, Manchester, UK, pp.238−241, 2011.
[158]	I. Kallfass, P. Harati, I. Dan, et al., “MMIC chipset for 300 GHz indoor wireless communication,” 2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, Israel, pp.1−4, 2015.
[159]	D. Lopez-Diaz, S. Koenig, A. Tessmann, et al, “Multi-gigabit data transmission at 240 GHz with complex baseband power detection,” 2014 IEEE 44th European Microwave Conference, Rome, Italy, pp.364−367, 2014.
[160]	M. Abbasi, S. E. Gunnarsson, N. Wadefalk, et al., “Single-chip 220-GHz active heterodyne receiver and transmitter MMICs with on-chip integrated antenna,” IEEE Transactions on Microwave Theory and Techniques, vol.59, no.2, pp.466–478, 2010.
[161]	K. Schmalz, R. Wang, J. Borngräber, et al., “245 GHz SiGe transmitter with integrated antenna and external PLL,” 2013 IEEE MTT-S International Microwave Symposium (IMS), Seattle, WA, USA, pp.1−3, 2013.
[162]	Y. Mao, K. Schmalz, J. Borngräber, et al., “245 GHz subharmonic receiver in SiGe,” 2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Seattle, WA, USA, pp.101−104, 2013.
[163]	M. Elkhouly, Y. Mao, C. Meliani, et al., “A 245 GHz ASK modulator and demodulator with 40 Gbits/sec data rate in 0.13 μm SiGe BiCMOS technology,” 2013 IEEE MTT-S International Microwave Symposium Digest (MTT), Seattle, WA, USA, pp.1−3, 2013.
[164]	S. Zeinolabedinzadeh, M. Kaynak, W. Khan, et al., “A 314 GHz, fully-integrated SiGe transmitter and receiver with integrated antenna,” 2014 IEEE Radio Frequency Integrated Circuits Symposium, Tampa, FL, USA, pp.361−364, 2014.
[165]	J. Antes, S. Koenig, D. Lopez-Diaz, et al., “Transmission of an 8-PSK modulated 30 Gbit/s signal using an MMIC-based 240 GHz wireless link,” 2013 IEEE MTT-S International Microwave Symposium (IMS), Seattle, WA, USA, pp.1−3, 2013.
[166]	J. Antes, F. Boes, D. Meier, et al., “Ultra-wideband single-balanced transmitter-MMIC for 300 GHz communication systems,” 2014 IEEE MTT-S International Microwave Symposium (IMS), Tampa, FL, USA, pp.1−3, 2014.
[167]	S. Koenig, D. Lopez-Diaz, J. Antes, et al., “Wireless sub-THz communication system with high data rate,” Nature photonics, vol.7, pp.977–981, 2013.
[168]	S. Carpenter, D. Nopchinda, M. Abbasi, et al., “A D-band 48-Gbit/s 64-QAM/QPSK direct-conversion I/Q transceiver chipset,” IEEE Transactions on Microwave Theory and Techniques, vol.64, no.4, pp.1285–1296, 2016. doi: 10.1109/TMTT.2016.2533491
[169]	Y. Yan, Y. B. Karandikar, S. E. Gunnarsson, et al., “340 GHz integrated receiver in 250 nm InP DHBT technology,” IEEE Transactions on Terahertz Science and Technology, vol.2, no.3, pp.306–314, 2012. doi: 10.1109/TTHZ.2012.2189912
[170]	J. Park, S. Kang, and A. M. Niknejad, “A 0.38 THz fully integrated transceiver utilizing a quadrature push-push harmonic circuitry in SiGe BiCMOS,” IEEE Journal of Solid-State Circuits, vol.47, no.10, pp.2344–2354, 2012. doi: 10.1109/JSSC.2012.2211156
[171]	J. Park, S. Kang, S. V. Thyagarajan, et al., “A 260 GHz fully integrated CMOS transceiver for wireless chip-to-chip communication,” 2012 Symposium on VLSI Circuits (VLSIC), Honolulu, HI, USA, pp.48−49, 2012.
[172]	J. W. Holloway, G. C. Dogiamis, and R. Han, “A 105 Gb/s Dielectric-Waveguide Link in 130 nm BiCMOS Using Channelized 220-to-335 GHz Signal and Integrated Waveguide Coupler,” 2021 IEEE Int. Solid-State Circuits Conf. (ISSCC), San Francisco, CA, USA, pp.196−198, 2021.
[173]	C. Jiang, A. Cathelin, and E. Afshari, “A high-speed efficient 220-GHz spatial-orthogonal ASK transmitter in 130-nm SiGe BiCMOS,” IEEE Journal of Solid-State Circuits, vol.52, no.9, pp.2321–2334, 2017. doi: 10.1109/JSSC.2017.2702007
[174]	A. Townley, N. Baniasadi, S. Krishnamurthy, et al., “A fully integrated, dual channel, flip chip packaged 113 GHz transceiver in 28nm CMOS supporting an 80 Gb/s wireless link,” 2020 IEEE Custom Integrated Circuits Conference (CICC), Boston, MA, USA, pp.1−4, 2020.
[175]	K. Sengupta and A. Hajimiri, “A 0.28 THz power-generation and beam-steering array in CMOS based on distributed active radiators,” IEEE Journal of Solid-State Circuits, vol.47, no.12, pp.3013–3031, 2012. doi: 10.1109/JSSC.2012.2217831
[176]	Q. Zhong, Z. Chen, N. Sharma, et al., “300-GHz CMOS QPSK transmitter for 30-Gbps dielectric waveguide communication,” 2018 IEEE Custom Integrated Circuits Conference (CICC), San Diego, CA, USA, pp.1−4, 2018.
[177]	I. Momson, S. Dong, P. Yelleswarapu, et al., “315-GHz self-synchronizing minimum shift keying receiver in 65-nm CMOS,” 2020 IEEE Symposium on VLSI Circuits, Honolulu, HI, USA, pp.1−2, 2020.
[178]	S. Shopov, O. D. Gurbuz, G. M. Rebeiz, et al., “A D-band digital transmitter with 64-QAM and OFDM free-space constellation formation,” IEEE Journal of Solid-State Circuits, vol.53, no.7, pp.2012–2022, 2018. doi: 10.1109/JSSC.2018.2824318
[179]	A. A. Farid, A. Simsek, A. S. H. Ahmed, et al., “A broadband direct conversion transmitter/receiver at D-band using CMOS 22nm FDSOI,” 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Boston, MA, USA, pp.135−138, 2019.
[180]	A. Hamani, F. Foglia-Manzillo, A. Siligaris, et al., “An 84.48 Gb/s CMOS D-band multi-channel TX system-in-package,” 2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Atlanta, GA, USA, pp.207−210, 2021.
[181]	I. Abdo, C. da Gomez, C. Wang, et al., “A 300GHz-band phased-array transceiver using Bi-directional outphasing and hartley architecture in 65nm CMOS,” 2021 IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, CA, USA, pp.316−318, 2021.
[182]	M. H. Eissa, N. Maletic, L. Lopacinski, et al., “Frequency interleaving IF transmitter and receiver for 240-GHz communication in SiGe:C BiCMOS,” IEEE Trans. on Microwave Theory and Techniques, vol.68, no.1, pp.239–251, 2020. doi: 10.1109/TMTT.2019.2940018
[183]	S. V. Thyagarajan, S. Kang, and A. M. Niknejad, “A 240 GHz fully integrated wideband QPSK receiver in 65 nm CMOS,” IEEE Journal of Solid-State Circuits, vol.50, no.10, pp.2268–2280, 2015. doi: 10.1109/JSSC.2015.2467216
[184]	S. Kang, S. V. Thyagarajan, and A. M. Niknejad, “A 240 GHz fully integrated wideband QPSK transmitter in 65 nm CMOS,” IEEE Journal of Solid-State Circuits, vol.50, no.10, pp.2256–2267, 2015. doi: 10.1109/JSSC.2015.2467179
[185]	S. Moghadami, F. Hajilou, P. Agrawal, et al., “A 210 GHz fully-integrated OOK transceiver for short-range wireless chip-to-chip communication in 40 nm CMOS technology,” IEEE Transactions on Terahertz Science and Technology, vol.5, no.5, pp.737–741, 2015. doi: 10.1109/TTHZ.2015.2459673
[186]	K. Sengupta and A. Hajimiri, “A 0.28 THz 4×4 power generation and beam-steering array,” 2012 IEEE International Solid-State Circuits Conference, San Francisco, CA, USA, pp.256−258, 2012.
[187]	H. Jalili and O. Momeni, “17.10 a 318-to-370GHz standing-wave 2D phased array in 0.13μm BiCMOS,” 2017 IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, CA, USA, pp.310−311, 2017.
[188]	Y. Tousi and E. Afshari, “A high-power and scalable 2-D phased array for terahertz CMOS integrated systems,” IEEE Journal of Solid-State Circuits, vol.50, no.2, pp.597–609, 2015. doi: 10.1109/JSSC.2014.2375324
[189]	H. Saeidi, S. Venkatesh, C. R. Chappidi, et al., “A 4×4 distributed multilayer oscillator network for harmonic injection and THz beamforming with 14 dBm EIRP at 416 GHz in a lensless 65nm CMOS IC,” 2020 IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, USA, pp.256−258, 2020.
[190]	K. Guo, Y. Zhang, and P. Reynaert, “A 0.53-THz subharmonic injection-locked phased array with 63-μW radiated power in 40-nm CMOS,” IEEE Journal of Solid-State Circuits, vol.54, no.2, pp.380–391, 2019. doi: 10.1109/JSSC.2018.2877203
[191]	K. Guo and P. Reynaert, “A 0.59THz beam-steerable coherent radiator array with 1mW radiated power and 24.1 dBm EIRP in 40nm CMOS,” 2020 IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, CA, USA, pp.442−444, 2020.
[192]	P. Zhou, J. Chen, P. Yan, et al., “A 143.2-168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process,” Sci. China Inf. Sci, vol.63, article no.229402, 2020. doi: 10.1007/s11432-019-2732-1
[193]	P. Zhou, P. Yan, J. Chen, et al., “A high-efficiency, high harmonic rejection E-band SiGe HBT frequency tripler for high-resolution radar application,” Sci. China Inf. Sci, vol.62, article no.69406, 2019. doi: 10.1007/s11432-018-9665-1
[194]	J. Yu, J. Chen, P. Zhou, et al., “A 300 GHz transmitter front-end with −4.1 dBm peak output power for Sub-THz communication using 130-nm SiGe BiCMOS technology,” IEEE Trans. on Microwave Theory and Tech., vol.69, no.11, pp.4925–4936, 2021. doi: 10.1109/TMTT.2021.3103574