Design and Analysis of a 0.01-to-6GHz 31dBm-<i>P</i><sub>1dB</sub> 31.5%-PAE Distributed Power Amplifier in 0.25-μm GaAs Technology

MENG Fanyi; LIU Cha; HU Jianquan; MOU Shouxian; MA Kaixue

doi:10.1049/cje.2021.04.008

Volume 30 Issue 3

May 2021

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Article Navigation > Chinese Journal of Electronics > 2021 > 30(3): 549-555

MENG Fanyi, LIU Cha, HU Jianquan, et al., “Design and Analysis of a 0.01-to-6GHz 31dBm-P1dB 31.5%-PAE Distributed Power Amplifier in 0.25-μm GaAs Technology,” Chinese Journal of Electronics, vol. 30, no. 3, pp. 549-555, 2021, doi: 10.1049/cje.2021.04.008

Citation:

MENG Fanyi, LIU Cha, HU Jianquan, et al., “Design and Analysis of a 0.01-to-6GHz 31dBm-P_1dB 31.5%-PAE Distributed Power Amplifier in 0.25-μm GaAs Technology,” Chinese Journal of Electronics, vol. 30, no. 3, pp. 549-555, 2021, doi: 10.1049/cje.2021.04.008

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Design and Analysis of a 0.01-to-6GHz 31dBm-P_1dB 31.5%-PAE Distributed Power Amplifier in 0.25-μm GaAs Technology

doi: 10.1049/cje.2021.04.008

1. School of Microelectronics, Tianjin University, Tianjin 300072, China;
2. Smarter Micro Company, Shanghai 201203, China;
3. School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China

Funds:

This work is supported by the National Key Research and Development Program Project of China (No.2019YFB1803200), the National Natural Science Foundation of China (No.61701080), and the Tianjin Municipal Science and Technology Bureau (No.20JCQNJC01040).

Received Date: 2020-06-27

Abstract

Abstract

This paper presents the design and analysis of a distributed power amplifier with 6-dB bandwidth from 10MHz to 6GHz. To meet the stringent targeted specification, the concurrent design and analysis are carefully performed with optimizations in both passive and active devices. The gate capacitive division technique is proposed and proven theoretically of bandwidth extension effect and power efficiency enhancement. To validate the theory, a prototype is designed in a 0.25-μm GaAs technology. The fabricated amplifier chip is packaged in an evaluation cavity of SMA connectors. The measurement shows an average power gain of 15dB, OP_1dB and P_SAT of 31dBm and 32.6dBm at 3GHz, and PAE at OP_1dB and P_SAT points are 31.5% and 43.7% respectively. To the best of authors’ knowledge, the amplifier achieves the highest Power-added efficiency (PAE) among the similar GaAs amplifiers.
- Bandwidth extension,
- Distributed amplifier,
- GaAs technology,
- The gate capacitive division technique,
- PAE enhancement,
- Power amplifier

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References(27)

References

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