Volume 30 Issue 5
Sep.  2021
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SUN Shuang, LI Ming, ZHANG Baotong, et al., “Analysis on Three-Dimensional Gate Edge Roughness of Gate-All-Around Devices,” Chinese Journal of Electronics, vol. 30, no. 5, pp. 861-865, 2021, doi: 10.1049/cje.2021.06.008
Citation: SUN Shuang, LI Ming, ZHANG Baotong, et al., “Analysis on Three-Dimensional Gate Edge Roughness of Gate-All-Around Devices,” Chinese Journal of Electronics, vol. 30, no. 5, pp. 861-865, 2021, doi: 10.1049/cje.2021.06.008

Analysis on Three-Dimensional Gate Edge Roughness of Gate-All-Around Devices

doi: 10.1049/cje.2021.06.008

This work is supported by the National Key Research and Development Plan (No.2016YFA0200504) and the National Natural Science Foundation of China (No.61927901).

  • Received Date: 2021-01-20
    Available Online: 2021-09-02
  • As the physical size of metal-oxide-semiconductor field effect transistor approaches the end of scaling down, the effect of process-induced variations such as gate edge roughness on device performance cannot be neglected. For gate-all-around devices, the three-dimensional gate profiles make the evaluation of gate edge roughness different and more complicated than that in planar metal-oxide-semiconductor field effect transistors. In this work, an evaluation algorithm was proposed to model the three-dimensional gate edge roughness in a real gate-all-around device. The results show that the typical trapezoidal gate is more likely to suffer from gate edge roughness effect than the ideal rectangular gate. The effect of the size of the gate and the correlation coefficient of the edges on the effective channel length variation was also studied.
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