Technology Dependency of TID Response for a Custom Bandgap Voltage Reference in 65 nm to 28 nm Bulk CMOS Technologies

Total ionizing dose (TID) radiation response of the custom bandgap voltage reference (BGR) fabricated with 65 nm, 40 nm and 28 nm commercial bulk CMOS technologies is investigated. TID response is assessed employing Co-60 gamma ray source. The measurements indicate that the voltage reference is reduced by 5.67% in 28 nm, 0.56% in 40 nm and increased by 1.28% in 65 nm devices under irradiation up to 1.2 Mrad(Si) TID. After 48 hours of annealing, the voltage reference changes are just −1.84% in 28 nm, 0.14% in 40 nm and 1.14% in 65 nm. The obtained results demonstrate that the custom BGR has naturally superior TID response due to the circuit design margins.