Low Loss and Low EMI Noise Trench IGBT with Shallow Emitter Trench Controlled P-Type Dummy Region

A novel trench insulated gate bipolar transistor (TIGBT) with a shallow emitter trench controlled P-type dummy region (STCP-TIGBT) is proposed. Compared with the conventional TIGBT with floating P-type dummy region (CFP-TIGBT) and TIGBT with floating P-type dummy region and normally on hole path (HFP-TIGBT), the proposed STCP structure not only speeds up the extraction of excessive holes in the turn-off process but also reduces the Miller plateau charge (Q_gc). Therefore, both the power loss and electromagnetic interference (EMI) noise are significantly reduced. Simulation results show that the Q_gc of the proposed device is only 501 nC/cm², which is reduced by 58.5% and 26.4% when compared to the CFP-TIGBT and HFP-TIGBT, respectively. At same on-state voltage drop (V_ceon) of 1.02 V, the turn-off loss (E_off) of the proposed device is 13.49 mJ/cm², which is 64.6% and 67.6% less than those of the CFP-TIGBT and HFP-TIGBT, respectively. Moreover, the reverse recovery dV_ak/dt of the freewheeling diode at same turn-on loss (E_on) of 31.8 mJ/cm² for the proposed STCP-TIGBT is only 2.15 kV/μs, which is reduced by 91.3% and 57.2% when compared to 24.69 kV/μs and 5.02 kV/μs for the CFP-TIGBT and HFP-TIGBT, respectively. The reduced dV/dt significantly suppresses the electromagnetic interference noise generated by the proposed device.