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Nan HE, Lei WANG, Yi TONG, “Investigating the Effects of V2C MXene on Improving the Switching Stability and Reducing the Operation Voltages of TiO2-Based Memristors,” Chinese Journal of Electronics, vol. 33, no. 3, pp. 1–7, 2024 doi: 10.23919/cje.2022.00.327
Citation: Nan HE, Lei WANG, Yi TONG, “Investigating the Effects of V2C MXene on Improving the Switching Stability and Reducing the Operation Voltages of TiO2-Based Memristors,” Chinese Journal of Electronics, vol. 33, no. 3, pp. 1–7, 2024 doi: 10.23919/cje.2022.00.327

Investigating the Effects of V2C MXene on Improving the Switching Stability and Reducing the Operation Voltages of TiO2-Based Memristors

doi: 10.23919/cje.2022.00.327
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  • Author Bio:

    Nan HE received the B.S. degree in Microelectronics from Nanjing University of Posts and Telecommunications and is now a Ph.D. candidate in College of Electronic and Optical Engineering, and College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications. His current research interests including stable and high-performance memristive devices design. (Email: 2020020117@njupt. edu.cn)

    Lei WANG got his Ph.D. degree in 2009 at the University of Exeter. Between 2008 and 2011, he was employed as a Postdoctoral Research Fellow in the University of Exeter to work on a fellowship funded by European Commission. In 2020, he joined the Nanjing University of Posts and Telecommunications as a full Professor. His research interests include phase-change memories, neural networks, and other phase-change based optoelectronic devices and their potential applications.(Email: LeiWang1980@njupt.edu.cn)

    Yi TONG received the Ph.D. degree from National University of Singapore in 2014. He is now a Professor in College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, His current research interest include Post-CMOS hardware for in-memory computing, neuromorphic computing, and artificial intelligence. (Email: tongyi@njupt.edu.cn)

  • Corresponding author: Email: tongyi@njupt.edu.cn
  • Available Online: 2023-08-18
  • Three-atoms-type V2C MXene, an emerging class of transition metal carbides, has attracted tremendous attention in the fabrication of advanced memristive devices due to its excellent electrochemical properties. However, the inserted and behind physical effects of inserting V2C on traditional TiO2-based memristors have not been clearly explored. In this work, exhaustive electrical characterizations of the V2C/TiO2-based devices exhibit enhanced performance (e.g., improved switching stability and lower operating voltages) compared to the TiO2-based counterparts. In addition, the advantaged influences of the inserted V2C have also been studied by means of first-principles calculations, confirming that V2C MXene enables controllable internal ionic process and facilitated formation mechanism of the Ag conductive filaments. This work demonstrates a way to combine experimental and theoretical investigations to reveal the positive effects of introducing V2C MXene on memristor, which is beneficial for fabricating performance-enhanced memristors.
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