Investigating the Effects of V<sub>2</sub>C MXene on Improving the Switching Stability and Reducing the Operation Voltages of TiO<sub>2</sub>-Based Memristors

HE Nan; WANG Lei; TONG Yi

doi:10.23919/cje.2022.00.327

Volume 33 Issue 5

Sep. 2024

Turn off MathJax

Article Contents

Article Navigation > Chinese Journal of Electronics > 2024 > 33(5): 1181-1187

Nan HE, Lei WANG, and Yi TONG, “Investigating the Effects of V2C MXene on Improving the Switching Stability and Reducing the Operation Voltages of TiO2-Based Memristors,” Chinese Journal of Electronics, vol. 33, no. 5, pp. 1181–1187, 2024 doi: 10.23919/cje.2022.00.327

Citation:

Nan HE, Lei WANG, and Yi TONG, “Investigating the Effects of V₂C MXene on Improving the Switching Stability and Reducing the Operation Voltages of TiO₂-Based Memristors,” Chinese Journal of Electronics, vol. 33, no. 5, pp. 1181–1187, 2024 doi: 10.23919/cje.2022.00.327

Citation:

PDF( 6139 KB)

Investigating the Effects of V₂C MXene on Improving the Switching Stability and Reducing the Operation Voltages of TiO₂-Based Memristors

doi: 10.23919/cje.2022.00.327

HE Nan^1
,,
WANG Lei^1
,,
TONG Yi^{1, 2
,
,}

1.
College of Electronic and Optical Engineering, College of Flexible Electronics (Future Technology), and College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
2.
Gusu Laboratory of Materials, Suzhou 215000, China

More Information

Author Bio:
Nan HE received the B.S. degree in microelectronics from Nanjing University of Posts and Telecommunications, Nanjing, China, and is now a Ph.D. candidate with the College of Electronic and Optical Engineering, and the College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, China. His current research interests include stable and high-performance memristive devices design. (Email: 2020020117@njupt. edu.cn)

Lei WANG received the Ph.D. degree in 2009 at University of Exeter, Exeter, UK. Between 2008 and 2011, he was employed as a Postdoctoral Research Fellow with University of Exeter, Exeter, UK to work on a fellowship funded by European Commission. In 2020, he joined Nanjing University of Posts and Telecommunications, Nanjing, China, as a full Professor. His research interests include phase-change memories, neural networks, and other phase-change based optoelectronic devices and their potential applications.(Email: LeiWang1980@njupt.edu.cn)

Yi TONG received the Ph.D. degree from National University of Singapore, Singapore, Singapore, in 2014. He is now a Professor with the College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications. His current research interest include post-CMOS hardware for in-memory computing, neuromorphic computing, and artificial intelligence. (Email: tongyi@njupt.edu.cn)
Corresponding author: Email: tongyi@njupt.edu.cn
Received Date: 2022-09-28
Accepted Date: 2023-01-28

Available Online: 2023-08-18

Publish Date: 2024-09-05

Abstract

Abstract

Three-atoms-type V₂C MXene, an emerging class of transition metal carbides, has attracted tremendous attention in the fabrication of advanced memristive devices due to its excellent electrochemical properties. However, the inserted effects and corresponding physical mechanisms of inserting V₂C on traditional TiO₂-based memristors have not been clearly explored. In this work, exhaustive electrical characterizations of the V₂C/TiO₂-based devices exhibit enhanced performance (e.g., improved switching stability and lower operating voltages) compared to the TiO₂-based counterparts. In addition, the advantaged influences of the inserted V₂C have also been studied by means of first-principles calculations, confirming that V₂C MXene enables controllable internal ionic process and facilitated formation mechanism of the Ag conductive filaments. This work demonstrates a way to combine experimental and theoretical investigations to reveal the positive effects of introducing V₂C MXene on memristor, which is beneficial for fabricating performance-enhanced memristors.
- Memristor,
- V₂C MXene,
- First-principles calculation,
- Switching stability,
- Formation mechanism

FullText(HTML)

References(36)

References

[1]	K. M. Leng, X. Y. Yu, Z. Y. Ma, et al., “Artificial synapse arrays based on SiO_x/TiO_x memristive crossbar with high uniformity for neuromorphic computing,” Applied Physics Letters, vol. 120, no. 4, article no. 043101, 2022. doi: 10.1063/5.0078332
[2]	J. Bera, A. Betal, A. Sharma, et al., “CdSe quantum dot-based nanocomposites for ultralow-power memristors,” ACS Applied Nano Materials, vol. 5, no. 6, pp. 8502–8510, 2022. doi: 10.1021/acsanm.2c01894
[3]	N. He, L. Y. Tao, Q. Q. Zhang, et al., “Reversible transition of volatile and nonvolatile switching in Ag−In−Zn−S quantum dot-based memristors with low power consumption for synaptic applications,” ACS Applied Nano Materials, vol. 4, no. 3, pp. 2365–2374, 2021. doi: 10.1021/acsanm.0c03180
[4]	Y. R. Niu, K. Jiang, X. Y. Dong, et al., “High performance and low power consumption resistive random access memory with Ag/Fe₂O₃/Pt structure,” Nanotechnology, vol. 32, no. 50, article no. 505715, 2021. doi: 10.1088/1361-6528/ac26fd
[5]	W. C. Jhang and C. C. Hsu, “Coexistence of nonvolatile WORM, bipolar, unipolar, and volatile resistive switching characteristics in a dry oxide layer with Ag conductive bridges,” IEEE Transactions on Electron Devices, vol. 69, no. 9, pp. 4914–4919, 2022. doi: 10.1109/TED.2022.3192797
[6]	D. Acharyya, A. Hazra, and P. Bhattacharyya, “A journey towards reliability improvement of TiO₂ based resistive random access memory: A review,” Microelectronics Reliability, vol. 54, no. 3, pp. 541–560, 2014. doi: 10.1016/j.microrel.2013.11.013
[7]	J. M. Won, M. S. Kim, and S. C. Hong, “The cause of deactivation of VO_x/TiO₂ catalyst by thermal effect and the role of tungsten addition,” Chemical Engineering Science, vol. 229, article no. 116068, 2021. doi: 10.1016/j.ces.2020.116068
[8]	D. H. Kwon, K. M. Kim, J. H. Jang, et al., “Atomic structure of conducting nanofilaments in TiO₂ resistive switching memory,” Nature Nanotechnology, vol. 5, no. 2, pp. 148–153, 2010. doi: 10.1038/nnano.2009.456
[9]	D. P. Sahu and S. N. Jammalamadaka, “Remote control of resistive switching in TiO₂ based resistive random access memory device,” Scientific Reports, vol. 7, article no. 17224, 2017. doi: 10.1038/s41598-017-17607-4
[10]	X. J. Lian, X. Y. Shen, M. C. Zhang, et al., “Resistance switching characteristics and mechanisms of MXene/SiO₂ structure-based memristor,” Applied Physics Letters, vol. 115, no. 6, article no. 063501, 2019. doi: 10.1063/1.5087423
[11]	X. J. Lian, J. K. Fu, Z. X. Gao, et al., “High-performance artificial neurons based on Ag/MXene/GST/Pt threshold switching memristors,” Chinese Physics B, vol. 32, no. 1, article no. 017304, 2023. doi: 10.1088/1674-1056/ac673f
[12]	N. He, Q. Q. Zhang, L. Y. Tao, et al., “V₂C-based memristor for applications of low power electronic synapse,” IEEE Electron Device Letters, vol. 42, no. 3, pp. 319–322, 2021. doi: 10.1109/LED.2021.3049676
[13]	X. T. Chen, Y. Wang, D. Q. Shen, et al., “First-principles calculation and experimental investigation of a three-atoms-type MXene V₂C and its effects on memristive devices,” IEEE Transactions on Nanotechnology, vol. 20, pp. 512–516, 2021. doi: 10.1109/TNANO.2021.3089211
[14]	G. Kresse and J. Furthmüller, “Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set,” Physical Review B, vol. 54, no. 16, pp. 11169–11186, 1996. doi: 10.1103/PhysRevB.54.11169
[15]	J. Perdew, K. Burke, and M. Ernzerhof, “Generalized gradient approximation made simple,” Physical Review Letters, vol. 77, no. 18, pp. 3865–3868, 1996. doi: 10.1103/PhysRevLett.77.3865
[16]	P. E. Blöchl, “Projector augmented-wave method,” Physical Review B, vol. 50, no. 24, pp. 17953–17979, 1994. doi: 10.1103/PhysRevB.50.17953
[17]	X. B. Yan, Q. L. Zhao, A. P. Chen, et al., “Vacancy-induced synaptic behavior in 2D WS₂ nanosheet-based memristor for low-power neuromorphic computing,” Small, vol. 15, no. 24, article no. 1901423, 2019. doi: 10.1002/smll.201901423
[18]	Q. Xue, Y. Peng, L. Cao, et al., “Ultralow set voltage and enhanced switching reliability for resistive random-access memory enabled by an electrodeposited nanocone array,” ACS Applied Materials & Interfaces, vol. 14, no. 22, pp. 25710–25721, 2022. doi: 10.1021/acsami.2c03978
[19]	X. B. Yan, Y. F. Pei, H. W. Chen, et al., “Self-assembled networked PbS distribution quantum dots for resistive switching and artificial synapse performance boost of memristors,” Advanced Materials, vol. 31, no. 7, article no. 1805284, 2019. doi: 10.1002/adma.201805284
[20]	Y. Q. Wang, W. X. Wang, C. W. Zhang, et al., “A digital−analog integrated memristor based on a ZnO NPs/CuO NWs heterostructure for neuromorphic computing,” ACS Applied Electronic Materials, vol. 4, no. 7, pp. 3525–3534, 2022. doi: 10.1021/acsaelm.2c00495
[21]	R. R. Pradhan, J. Bera, A. Betal, et al., “Hot injection-based synthesized colloidal CdSe quantum dots embedded in poly(4-vinylpyridine) (PVP) matrix form a nanoscale heterostructure for a high on−off ratio memory-switching device,” ACS Applied Materials & Interfaces, vol. 13, no. 21, pp. 25064–25071, 2021. doi: 10.1021/acsami.1c02702
[22]	C. X. Wang, G. Q. Mao, M. H. Huang, et al., “HfO_x/AlO_y superlattice-like memristive synapse,” Advanced Science, vol. 9, no. 21, article no. 2201446, 2022. doi: 10.1002/advs.202201446
[23]	O. Kapur, D. K. Guo, J. Reynolds, et al., “Back-end-of-line SiC-based memristor for resistive memory and artificial synapse,” Advanced Electronic Materials, vol. 8, no. 9, article no. 2200312, 2022. doi: 10.1002/aelm.202200312
[24]	X. M. Liu, S. X. Ren, Z. H. Li, et al., “Flexible transparent high-efficiency photoelectric perovskite resistive switching memory,” Advanced Functional Materials, vol. 32, no. 38, article no. 2202951, 2022. doi: 10.1002/adfm.202202951
[25]	M. Park, J. Park, and S. Kim, “Compatible resistive switching mechanisms in Ni/SiO_x/ITO and application to neuromorphic systems,” Journal of Alloys and Compounds, vol. 903, article no. 163870, 2022. doi: 10.1016/j.jallcom.2022.163870
[26]	H. S. Choi, J. Lee, B. Kim, et al., “Highly-packed self-assembled graphene oxide film-integrated resistive random-access memory on a silicon substrate for neuromorphic application,” Nanotechnology, vol. 33, no. 43, article no. 435201, 2022. doi: 10.1088/1361-6528/ac805d
[27]	W. Zhang, J. Z. Lei, Y. X. Dai, et al., “Switching-behavior improvement in HfO₂/ZnO bilayer memory devices by tailoring of interfacial and microstructural characteristics,” Nanotechnology, vol. 33, no. 25, article no. 255703, 2022. doi: 10.1088/1361-6528/ac5e70
[28]	J. Yun and D. Kim, “Unraveling the role of polydopamines in resistive switching in Al/Polydopamine/Al structure for organic resistive random-access memory,” Polymers, vol. 14, no. 15, article no. 2995, 2022. doi: 10.3390/polym14152995
[29]	Y. Xia, J. Wang, R. Chen, et al., “2D heterostructure of Bi₂O₂Se/Bi₂SeO_x nanosheet for resistive random access memory,” Advanced Electronic Materials, vol. 8, no. 9, article no. 2200126, 2022. doi: 10.1002/AELM.202200126
[30]	K. Kumari, S. Kar, A. D. Thakur, et al., “Role of an oxide interface in a resistive switch,” Current Applied Physics, vol. 35, pp. 16–23, 2022. doi: 10.1016/j.cap.2021.10.006
[31]	Q. Xue, T. Hang, J. H. Liang, et al., “Nonvolatile resistive memory and synaptic learning using hybrid flexible memristor based on combustion synthesized Mn-ZnO,” Journal of Materials Science and Technology, vol. 119, no. 24, pp. 123–130, 2022. doi: 10.1016/j.jmst.2021.09.007
[32]	X. Y. Wang, N. Ali, G. Bi, et al., “Investigation of resistive switching in lead-free bismuth–silver halide double perovskite,” Semiconductor Science and Technology, vol. 37, no. 6, article no. 065011, 2022. doi: 10.1088/1361-6641/ac668b
[33]	G. Abbas, M. Hassan, Q. Khan, et al., “A low power-consumption and transient nonvolatile memory based on highly dense all-inorganic perovskite films,” Advanced Electronic Materials, vol. 8, no. 9, article no. 2101412, 2022. doi: 10.1002/aelm.202101412
[34]	X. Y. Zhao, K. L. Zhang, K. Hu, et al., “Self-rectifying Al₂O₃/TaO_x memristor with gradual operation at low current by interfacial layer,” IEEE Transactions on Electron Devices, vol. 68, no. 12, pp. 6100–6105, 2021. doi: 10.1109/TED.2021.3120701
[35]	V. I. Ivashchenko, P. E. A. Turchi, V. I. Shevchenko, et al., “Stability and mechanical properties of molybdenum carbides and the Ti–Mo–C solid solutions: A first-principles study,” Materials Chemistry and Physics, vol. 275, article no. 125178, 2022. doi: 10.1016/j.matchemphys.2021.125178
[36]	X. M. He, J. C. Hu, and X. Tian, “Electronic characteristics of PbS quantum dots passivated by halides on different surfaces,” Applied Surface Science, vol. 568, article no. 150736, 2021. doi: 10.1016/j.apsusc.2021.150736