Investigating the Effects of V₂C MXene on Improving the Switching Stability and Reducing the Operation Voltages of TiO₂-Based Memristors

Three-atoms-type V₂C MXene, an emerging class of transition metal carbides, has attracted tremendous attention in the fabrication of advanced memristive devices due to its excellent electrochemical properties. However, the inserted effects and corresponding physical mechanisms of inserting V₂C on traditional TiO₂-based memristors have not been clearly explored. In this work, exhaustive electrical characterizations of the V₂C/TiO₂-based devices exhibit enhanced performance (e.g., improved switching stability and lower operating voltages) compared to the TiO₂-based counterparts. In addition, the advantaged influences of the inserted V₂C have also been studied by means of first-principles calculations, confirming that V₂C MXene enables controllable internal ionic process and facilitated formation mechanism of the Ag conductive filaments. This work demonstrates a way to combine experimental and theoretical investigations to reveal the positive effects of introducing V₂C MXene on memristor, which is beneficial for fabricating performance-enhanced memristors.