Method of Single Event Effects Radiation Hardened Design for DC-DC Converter Based Load Transient Detection

GUO Zhongjie; LIU Nan; LU Hu; LI Mengli; QIU Ziyi

doi:10.23919/cje.2022.00.442

Volume 33 Issue 5

Sep. 2024

Turn off MathJax

Article Contents

Article Navigation > Chinese Journal of Electronics > 2024 > 33(5): 1154-1164

Zhongjie GUO, Nan LIU, Hu LU, et al., “Method of Single Event Effects Radiation Hardened Design for DC-DC Converter Based Load Transient Detection,” Chinese Journal of Electronics, vol. 33, no. 5, pp. 1154–1164, 2024 doi: 10.23919/cje.2022.00.442

Citation:

Zhongjie GUO, Nan LIU, Hu LU, et al., “Method of Single Event Effects Radiation Hardened Design for DC-DC Converter Based Load Transient Detection,” Chinese Journal of Electronics, vol. 33, no. 5, pp. 1154–1164, 2024 doi: 10.23919/cje.2022.00.442

Citation:

PDF( 10055 KB)

Method of Single Event Effects Radiation Hardened Design for DC-DC Converter Based Load Transient Detection

doi: 10.23919/cje.2022.00.442

1.
School of Automation and Information Engineering, Xi’an University of Technology, Xi’an 710048, China

More Information

Author Bio:
Zhongjie GUO received the B.S. and M.S. degrees from Xidian University, Xi’an, China, in 2004 and 2007, respectively, and Ph.D. degree in microelectronics engineering from Xi’an Microelectronic Technology Institute, China, in 2012. His current research interest focuses on high performance mixed signal integration circuit design. (Email: zjguo@xaut.edu.cn)

Nan LIU is an M.S. candidate with Xi’an University of Technology, Xi’an, China. His current research interest focuses on high performance mixed signal integration circuit design. (Email: liunan@stu.xaut.edu.cn)

Hu LU is an M.S. candidate with Xi’an University of Technology, Xi’an, China. His current research interest focuses on high performance mixed signal integration circuit design. (Email: luhu@stu.xaut.edu.cn)

Mengli LI is an M.S. candidate with Xi’an University of Technology, Xi’an, China. His current research interest focuses on high performance mixed signal integration circuit design. (Email: limengli@stu.xaut.edu.cn)

Ziyi QIU is an M.S. candidate in Xi’an University of Technology, Xi’an, China. His current research interest focuses on high performance mixed signal integration circuit design. (Email: zyqiu@stu.xaut.edu.cn)
Corresponding author: Email: zjguo@xaut.edu.cn
Received Date: 2022-12-20
Accepted Date: 2023-06-26

Available Online: 2023-09-12

Publish Date: 2024-09-05

Abstract

Abstract

Aiming at the impact of load current change on single-event transient, the essential difference between single-event transient and load transient of DC-DC converter is deeply studied. A hardened circuit based on load transient detection is proposed. The circuit detects the load transient information in time and outputs a control signal to control the single event hardened circuit, thereby realizing the improvement of the transient characteristics of the system under dynamic conditions. Based on the 180 nm bipolar-CMOS-DMOS (BCD) process, the design and physical verification of a boost converter are completed. The experimental results show that the input voltage range is 2.9–4.5 V, the output voltage range is 5.8–7.9 V, and the load current is 0–55 mA. During load transients, the load detection circuit turns off the hardened circuit in time, avoiding system oscillation and widening the dynamic range of the hardening circuit. Under the single-event transient, the output voltage fluctuation of the system does not exceed the maximum ripple voltage, and the single-event transient suppression ability reaches more than 86%, the system can work well with linear energy transfer of about 100 MeV·cm²/mg.
- DC-DC converter,
- Analog single-event transient effect,
- Load transient detection,
- Radiation hardened by design

FullText(HTML)

References(19)

References

[1]	S. Buchner and D. McMorrow, “Single-event transients in bipolar linear integrated circuits,” IEEE Transactions on Nuclear Science, vol. 53, no. 6, pp. 3079–3102, 2006. doi: 10.1109/TNS.2006.882497
[2]	M. Bagatin and S. Gerardin, “Single-event mitigation techniques for analog and mixed- signal circuits,” in Ionizing Radiation Effects in Electronics: From Memories to Imagers, M. Bagatin and S. Gerardin, Eds. CRC Press, Boca Raton, USA, pp. 229–264, 2016.
[3]	W. Y. Liu, F. Zhang, F. X. Sun, et al., “Radiation principle and spatial direct modulation method of a low frequency antenna based on rotating permanent magnet,” Chinese Journal of Electronics, vol. 31, no. 4, pp. 674–682, 2022. doi: 10.1049/cje.2020.00.130
[4]	P. Y. Yi, Z. M. Zhu, N. Xu, et al., “A unity-gain buffer assisted noise-shaping SAR ADC based on error-feedback structure,” Chinese Journal of Electronics, vol. 31, no. 4, pp. 658–664, 2022. doi: 10.1049/cje.2020.00.286
[5]	P. G. Zhou, J. X. Chen, S. Y. Tang, et al., “Research on silicon-based terahertz communication integrated circuits,” Chinese Journal of Electronics, vol. 31, no. 3, pp. 516–533, 2022. doi: 10.1049/cje.2021.00.253
[6]	K. S. Morgan, D. L. McMurtrey, B. H. Pratt, et al., “A comparison of TMR with alternative fault-tolerant design techniques for FPGAs,” IEEE Transactions on Nuclear Science, vol. 54, no. 6, pp. 2065–2072, 2007. doi: 10.1109/TNS.2007.910871
[7]	R. L. Shuler, B. L. Bhuva, P. M. O’Neill, et al., “Comparison of dual-rail and TMR logic cost effectiveness and suitability for FPGAs with reconfigurable SEU tolerance,” IEEE Transactions on Nuclear Science, vol. 56, no. 1, pp. 214–219, 2009. doi: 10.1109/TNS.2008.2010320
[8]	P. Maillard, W. T. Holman, T. D. Loveless, et al., “An RHBD technique to mitigate missing pulses in delay locked loops,” IEEE Transactions on Nuclear Science, vol. 57, no. 6, pp. 3634–3639, 2010. doi: 10.1109/TNS.2010.2087357
[9]	O. Schrape, A. Breitenreiter, C. Schulze, et al., “Radiation-hardness-by-design latch-based triple modular redundancy flip-flops,” in Proceedings of the 2021 IEEE 12th Latin America Symposium on Circuits and System (LASCAS), Arequipa, Peru, pp. 1–4, 2021.
[10]	X. Chen, Q. C. Guo, H. Z. Yuan, et al., “A single-event transient radiation hardened low-dropout regulator for LC voltage-controlled oscillator,” Symmetry, vol. 14, no. 4, article no. 788, 2022. doi: 10.3390/sym14040788
[11]	Z. J. Guo, N. Liu, H. Lu, et al., “Method of single event effects radiation hardened for DC-DC converter based on automatic detection and dynamic compensation,” Transactions of Beijing Institute of Technology, vol. 42, no. 9, pp. 983–990, 2022. (in Chinese) doi: 10.15918/j.tbit1001-0645.2022.051
[12]	F. J. Franco, I. Lopez-Calle, J. G. Izquierdo, et al., “Modification of the LM124 single event transients by load resistors,” IEEE Transactions on Nuclear Science, vol. 57, no. 1, pp. 358–365, 2010. doi: 10.1109/TNS.2009.2037894
[13]	G. Wirth, F. L. Kastensmidt, and I. Ribeiro, “Single event transients in logic circuits—load and propagation induced pulse broadening,” IEEE Transactions on Nuclear Science, vol. 55, no. 6, pp. 2928–2935, 2008. doi: 10.1109/TNS.2008.2006265
[14]	Z. Z. Yang, X. D. Xie, X. Fan, et al., “A novel single-event-hardened charge pump using cascode voltage switch logic gates,” Microelectronics Reliability, vol. 91, pp. 269–277, 2018. doi: 10.1016/j.microrel.2018.10.016
[15]	J. J. Chen, Y. Q. Chi, B. Liang, et al., “ASET and TID characterization of a radiation hardened bandgap voltage reference in a 28-nm bulk CMOS technology,” IEEE Transactions on Nuclear Science, vol. 69, no. 5, pp. 1141–1147, 2022. doi: 10.1109/TNS.2022.3152496
[16]	J. T. Liu, Q. Sun, B. Liang, et al., “Bulk bias as an analog single-event transient mitigation technique with negligible penalty,” Electronics, vol. 9, no. 1, article no. 27, 2020. doi: 10.3390/electronics9010027
[17]	F. Wrobel, L. Dilillo, A. D. Touboul, et al., “Determining realistic parameters for the double exponential law that models transient current pulses,” IEEE Transactions on Nuclear Science, vol. 61, no. 4, pp. 1813–1818, 2014. doi: 10.1109/TNS.2014.2299762
[18]	K. A. Moen, L. Najafizadeh, J. Seungwoo, et al., “Accurate modeling of single-event transients in a SiGe voltage reference circuit,” IEEE Transactions on Nuclear Science, vol. 58, no. 3, pp. 877–884, 2011. doi: 10.1109/TNS.2011.2107333
[19]	D. Alexandrescu, L. Anghel, and M. Nicolaidis, “Simulating single event transients in VDSM ICs for ground level radiation,” Journal of Electronic Testing, vol. 20, no. 4, pp. 413–421, 2004. doi: 10.1023/B:JETT.0000039608.48856.33