High Power GaN Doubler with High Duty Cycle Pulse Based on Local Non-reflection Design

The study focuses on the development of gallium nitride (GaN) Schottky barrier diode (SBD) frequency doublers for terahertz technology. The low conversion efficiency of these doublers limits their practical applications. To address this challenge, the paper proposes a multi-objective local no-reflection design method based on a three-dimensional electromagnetic structure. The method aims to improve the coupling efficiency of input power and reduce the reflection of power output. Experimental results indicate that the proposed method significantly improves the performance of GaN SBD frequency doublers, achieving an efficiency of 16.9% and a peak output power of 160 mW at 175 GHz. These results suggest that the method can contribute to the further development of GaN SBD frequency doublers for terahertz technology.