1200V 4H-SiC Trench Gate Lateral MOSFET With Carrier Movement Control Technology

Recently, many lateral diffused MOSFETs (LDMOSs) used for all-SiC integration technology have been reported and investigated by TCAD simulations or experiments. In this paper, a 1200V trench gate SiC LDMOS with carrier movement control is proposed. Calibrated simulations are performed by Sentaurus Process Tool to emulate the fabrication process. The carrier movement control concept is introduced in the proposed LDMOS by using a trench gate and a N-type buried layer (NBL). The influence of SiC/SiO₂ interface states in the channel and drift regions on electron mobility can be weakened, resulting in a high electron mobility. Moreover, breakdown voltage (BV) is also improved because of the charge compensation effect of NBL. Compared with the conventional LDMOS, about 2× to 8× improvement in electron mobility in the drift region at V_DS of 400 V, 29.3% increase in specific on-state resistance (R_on,sp) and 20.5% improvement in BV are obtained in the proposed LDMOS.