A β-Ga₂O₃ DUV/X-ray Detector with High Sensitivity and Rapid Response Fabricated by Mist-CVD

Ga_2O_3 exhibits unique advantages in photodetection due to its high absorption coefficients for deep ultraviolet and X-ray photons, excellent radiation hardness, and remarkable stability. Researchers have been focused on developing novel, low-cost, high-performance detectors. Here, a cost-effective and facile mist chemical vapor deposition (Mist-CVD) method for the high-quality epitaxial growth of Ga_2O_3 with a full width at half maximum of 0.63° was employed, ultimately achieving thin-film device with exceptional optoelectronic performance. The fabricated device achieves exceptional sensitivities, including a high R of 112 A/W@254 nm illumination and a maximum sensitivity of 2.78×10^4 \mu C Gy_air^-1cm^-2 under X-ray irradiation. Furthermore, the device exhibits a rapid recovery time (\tau d_1=16 ms). This work comprehensively demonstrates the feasibility of growing Ga_2O_3 via mist-CVD and highlights the strong competitiveness of Ga_2O_3 in ultraviolet DUV and X-ray detection applications..