YI Yangbo, GE Zhe, LI Haisong, SUN Weifeng, SHI Longxing. Modeling and Parameters Extraction Techniquefor the MOSFETs at Liquid Nitrogen Temperature[J]. Chinese Journal of Electronics, 2009, 18(2): 215-218.
Citation: YI Yangbo, GE Zhe, LI Haisong, SUN Weifeng, SHI Longxing. Modeling and Parameters Extraction Techniquefor the MOSFETs at Liquid Nitrogen Temperature[J]. Chinese Journal of Electronics, 2009, 18(2): 215-218.

Modeling and Parameters Extraction Techniquefor the MOSFETs at Liquid Nitrogen Temperature

  • Received Date: 2007-11-01
  • Rev Recd Date: 2008-05-01
  • Publish Date: 2009-05-25
  • In this paper, a SPICE sub-circuit modelis presented for 0.51m MOSFETs at liquid nitrogen temperature (77K). The voltage-dependent resistors rg (Vgs)and rd (Vds) are introduced to model the freeze-out effect,which can't be solved by BSIM3. The detailed parametersextraction technique has also been suggested. The modeling results show a good agreement with the experimentalresults, which proves the proposed model and parametersextraction technique are significative and can be applied inthe low temperature circuit design.
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      沈阳化工大学材料科学与工程学院 沈阳 110142

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