Modeling and Parameters Extraction Techniquefor the MOSFETs at Liquid Nitrogen Temperature

In this paper, a SPICE sub-circuit modelis presented for 0.51m MOSFETs at liquid nitrogen temperature (77K). The voltage-dependent resistors r_g (V_gs)and r_d (V_ds) are introduced to model the freeze-out effect,which can't be solved by BSIM3. The detailed parametersextraction technique has also been suggested. The modeling results show a good agreement with the experimentalresults, which proves the proposed model and parametersextraction technique are significative and can be applied inthe low temperature circuit design.