YI Yangbo, GE Zhe, LI Haisong, et al., “Modeling and Parameters Extraction Techniquefor the MOSFETs at Liquid Nitrogen Temperature,” Chinese Journal of Electronics, vol. 18, no. 2, pp. 215-218, 2009,
Citation:
YI Yangbo, GE Zhe, LI Haisong, et al., “Modeling and Parameters Extraction Techniquefor the MOSFETs at Liquid Nitrogen Temperature,” Chinese Journal of Electronics, vol. 18, no. 2, pp. 215-218, 2009,
YI Yangbo, GE Zhe, LI Haisong, et al., “Modeling and Parameters Extraction Techniquefor the MOSFETs at Liquid Nitrogen Temperature,” Chinese Journal of Electronics, vol. 18, no. 2, pp. 215-218, 2009,
Citation:
YI Yangbo, GE Zhe, LI Haisong, et al., “Modeling and Parameters Extraction Techniquefor the MOSFETs at Liquid Nitrogen Temperature,” Chinese Journal of Electronics, vol. 18, no. 2, pp. 215-218, 2009,
In this paper, a SPICE sub-circuit modelis presented for 0.51m MOSFETs at liquid nitrogen temperature (77K). The voltage-dependent resistors rg (Vgs)and rd (Vds) are introduced to model the freeze-out effect,which can't be solved by BSIM3. The detailed parametersextraction technique has also been suggested. The modeling results show a good agreement with the experimentalresults, which proves the proposed model and parametersextraction technique are significative and can be applied inthe low temperature circuit design.