Simulation Study of Novel Very-Shallow-Trench-Isolation Vertical Bipolar Transistors on PD SOI

Two new structures with Very-shallowtrench-isolation (VSTI) for vertical bipolar transistors on thin top-Si PD SOI are proposed and their characterization is studied by 2-D simulations. These bipolar structures are compatible with 0.13μm SOI-CMOS process. The two proposed transistors exhibit good device performance with current gain of 64.34 and 89.7, f_T of 24.04GHz and 22.8GHz, f_max of 23.78GHz and 40.31GHz, respectively.