Simulation Study of Novel Very-Shallow-Trench-Isolation Vertical Bipolar Transistors on PD SOI

ZHOU Jianhua; S.K. PANG; ZOU Shichang

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Article Navigation > Chinese Journal of Electronics > 2011 > 20(4): 612-616

ZHOU Jianhua, S.K. PANG, ZOU Shichang. Simulation Study of Novel Very-Shallow-Trench-Isolation Vertical Bipolar Transistors on PD SOI[J]. Chinese Journal of Electronics, 2011, 20(4): 612-616.

Citation:

ZHOU Jianhua, S.K. PANG, ZOU Shichang. Simulation Study of Novel Very-Shallow-Trench-Isolation Vertical Bipolar Transistors on PD SOI[J]. Chinese Journal of Electronics, 2011, 20(4): 612-616.

ZHOU Jianhua, S.K. PANG, ZOU Shichang. Simulation Study of Novel Very-Shallow-Trench-Isolation Vertical Bipolar Transistors on PD SOI[J]. Chinese Journal of Electronics, 2011, 20(4): 612-616.

Citation:

ZHOU Jianhua, S.K. PANG, ZOU Shichang. Simulation Study of Novel Very-Shallow-Trench-Isolation Vertical Bipolar Transistors on PD SOI[J]. Chinese Journal of Electronics, 2011, 20(4): 612-616.

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Simulation Study of Novel Very-Shallow-Trench-Isolation Vertical Bipolar Transistors on PD SOI

ZHOU Jianhua^{1,2,3
,},
S.K. PANG¹,
ZOU Shichang^1,2

Received Date: 2010-08-01
Rev Recd Date: 2010-12-01
Publish Date: 2011-10-25

Abstract

Abstract

Two new structures with Very-shallowtrench-isolation (VSTI) for vertical bipolar transistors on thin top-Si PD SOI are proposed and their characterization is studied by 2-D simulations. These bipolar structures are compatible with 0.13μm SOI-CMOS process. The two proposed transistors exhibit good device performance with current gain of 64.34 and 89.7, f_T of 24.04GHz and 22.8GHz, f_max of 23.78GHz and 40.31GHz, respectively.