GONG Zheng, CHEN Bei, HU Xueqing, SHI Yin, Fa Foster Dai. A Low Power, Fully Integrated SiGe BiCMOS Baseband Circuitry for a Direct Conversion CMMB Tuner IC[J]. Chinese Journal of Electronics, 2012, 21(2): 231-235.
Citation: GONG Zheng, CHEN Bei, HU Xueqing, SHI Yin, Fa Foster Dai. A Low Power, Fully Integrated SiGe BiCMOS Baseband Circuitry for a Direct Conversion CMMB Tuner IC[J]. Chinese Journal of Electronics, 2012, 21(2): 231-235.

A Low Power, Fully Integrated SiGe BiCMOS Baseband Circuitry for a Direct Conversion CMMB Tuner IC

  • Received Date: 2011-02-01
  • Rev Recd Date: 2011-09-01
  • Publish Date: 2012-04-25
  • A fully integrated analog baseband circuitry for a China mobile multimedia broadcasting (CMMB) direct conversion tuner IC is proposed in this paper. It includes an 8th order Op-Amp-RC channel select filter with 1MHz or 4MHz bandwidth and 71dB stop-band rejection at 1.7f-3dB to meet the stringent Adjacent channel rejection (ACR) specifications and utilizes a novel gainbandwidth- product extension technique in designing the low power, high speed Operational amplifiers (Op-Amps) for the filter. A current steering type Variable gain amplifier (VGA) is adopted to provide 44dB variable gain range and an on-chip DC offset cancellation (DCOC) circuit is designed to prevent the baseband chain from saturation due to DC offsets. Fabricated in a 0.35μm SiGe BiCMOS process, the proposed chip consumes only 6mA from a 3V supply.
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      沈阳化工大学材料科学与工程学院 沈阳 110142

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