“A Novel Boosted Charge Transfer Circuit for High Speed Charge Domain Pipelined ADC,” Chinese Journal of Electronics, vol. 21, no. 4, pp. 627-632, 2012,
Citation: “A Novel Boosted Charge Transfer Circuit for High Speed Charge Domain Pipelined ADC,” Chinese Journal of Electronics, vol. 21, no. 4, pp. 627-632, 2012,

A Novel Boosted Charge Transfer Circuit for High Speed Charge Domain Pipelined ADC

  • Received Date: 2011-10-01
  • Rev Recd Date: 2012-05-01
  • Publish Date: 2012-10-25
  • A novel Boosted charge transfer (BCT) circuit is proposed for Bucket-brigade devices (BBDs) based charge-domain (CD) pipelined Analog-to-digital converter (ADC). It can significantly lower the sensitivity on Process, voltage and temperature (PVT) variations of traditional BCT circuit, which can eliminate the Common mode (CM) charge control circuit in the existing CD pipelined ADC. With the proposed BCT circuit, a prototype ADC is realized in a 0.18μm CMOS process without using any common mode charge control techniques, with only 27mW power consumption at 1.8 V supply. It achieves Spurious free dynamic range (SFDR) of 67.7 dB, Signal-to-noiseand- distortion ratio (SNDR) of 55.8 dB and Effective number of bits (ENOB) of 9.0 for a 3.79 MHz input at full sampling rate. The Differential nonlinearity (DNL) is +0.5/?0.3 LSB, and the Integral nonlinearity (INL) is +0.7/?0.55 LSB.
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