Low Power EEPROM Designed for Sensor Interface Circuit

Article Contents

Article Navigation > Chinese Journal of Electronics > 2012 > 21(4): 642-644

“Low Power EEPROM Designed for Sensor Interface Circuit,” Chinese Journal of Electronics, vol. 21, no. 4, pp. 642-644, 2012,

Citation:

“Low Power EEPROM Designed for Sensor Interface Circuit,” Chinese Journal of Electronics, vol. 21, no. 4, pp. 642-644, 2012,

“Low Power EEPROM Designed for Sensor Interface Circuit,” Chinese Journal of Electronics, vol. 21, no. 4, pp. 642-644, 2012,

Citation:

“Low Power EEPROM Designed for Sensor Interface Circuit,” Chinese Journal of Electronics, vol. 21, no. 4, pp. 642-644, 2012,

PDF( 373 KB)

Low Power EEPROM Designed for Sensor Interface Circuit

Received Date: 2011-10-01
Rev Recd Date: 2012-03-01
Publish Date: 2012-10-25

Abstract

Abstract

EEPROM is an important part for interface circuit of sensor. It saves the calibration data and parameter setting data by non-volatile storage. A new lowpower Erasable and electrically programmable read only memory (EEPROM) circuit for sensor interface circuit is introduced in this paper. The data stored in EEPROM can be reloaded automatically by the power-on-reset technique when the power is on. The module consumes power only during power-on-reset and data changing by status optimization and low-power design. This EEPROM circuit has been used in a MEMS accelerometer readout circuit verified by 0.35μm CMOS EEPROM process. The results are satisfying in that the module can write and store 25bit data and automatically reloads data within 0.1μs after power-on and then turns to low power mode.

FullText(HTML)

References(8)

References

A.F. Murray, L.W. Buchan, “A user’s guide to non-volatile, onchipanalogue memory”, IEL Journal of Electronics & CommunicationEngineering Journal, Vol.10, No.2, pp.53-63, 1998.

Rodgers, Bertram, Goenawan, Sofjan, Yunus, Mohammad;Kaneko, Yoshikazu, Yoshiike, Junichi, “16-μA interface circuitfor a capacitive flow sensor”, IEEE Journal of Solid-State Circuits,Vol.33, No.12, pp.2121-2133, 1998.

H.K. Trieu, M. Knier, O. Koester, H. Kappert, M. Schmidt, W.Mokwa, “Monolithic integrated surface micromachined pressuresensors with analog on-chip linearization and temperature compensation”,Proceedings of the IEEE Micro Electro MechanicalSystems (MEMS), Miyazaki, Japan, pp.547-550, 2000.

Wang Yaolin, Xu Yigang, Chen Feng, Hu Xinsong, “A new siliconunitized micro-acceleration sensors”, Chinese Journal ofElectronics, Vol.3, pp.36-40, 1994.

Wook Bahn, Hyoungho Ko, Taedong Ahn, Kwangho Yoo,Sangyoon Lee, Cheolkyu Han, Deog-kyoon Jeong, Dong-il Cho,“A 16-bit ultra-thin tri-axes capacitive micro accelerometer formobile application”, Control, Automation and Systems, ICCAS’07, Seoul, Korea, pp.1970-1973, 2007.

Zhang Guohua, “Temperature compensation of a capacitivepressure transducer”, Chinese Journal of Electronics, Vol.5,pp.124-125, 1996.

Ko, Hyoungho, Cho, Dong-il Dan, “Highly programmable temperaturecompensated readout circuit for capacitive micro accelerometer”,Sensors and Actuators, A: Physical, Vol.158,No.1, pp.72-83, 2010.

T. Tanzawa and T. Tanaka, “A dynamic analysis of the Dicksoncharge pump circuit”, IEEE J. Solid-state Circuits, Vol.32,No.8, pp.1231-1240, 1997.

Relative Articles

Supplements(0)

Cited By

Proportional views