Thin Dielectric Sheets Approximations for EM Scattering from Layered Dielectric Structures

HE Shiquan; NIE Zaiping; HU Jun

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Article Navigation > Chinese Journal of Electronics > 2013 > 22(2): 419-425

HE Shiquan, NIE Zaiping, HU Jun, “Thin Dielectric Sheets Approximations for EM Scattering from Layered Dielectric Structures,” Chinese Journal of Electronics, vol. 22, no. 2, pp. 419-425, 2013,

Citation:

HE Shiquan, NIE Zaiping, HU Jun, “Thin Dielectric Sheets Approximations for EM Scattering from Layered Dielectric Structures,” Chinese Journal of Electronics, vol. 22, no. 2, pp. 419-425, 2013,

HE Shiquan, NIE Zaiping, HU Jun, “Thin Dielectric Sheets Approximations for EM Scattering from Layered Dielectric Structures,” Chinese Journal of Electronics, vol. 22, no. 2, pp. 419-425, 2013,

Citation:

HE Shiquan, NIE Zaiping, HU Jun, “Thin Dielectric Sheets Approximations for EM Scattering from Layered Dielectric Structures,” Chinese Journal of Electronics, vol. 22, no. 2, pp. 419-425, 2013,

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Thin Dielectric Sheets Approximations for EM Scattering from Layered Dielectric Structures

School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China

Funds: This work is supported in part by the International Joint Research Project of China (111Project) (No.B07046), and the National Natural Science Foundation of China (No.60931004).

Received Date: 2011-03-01
Rev Recd Date: 2012-11-01
Publish Date: 2013-04-25

Abstract

Abstract

In this paper, a multi-layer TDS (Thin dielectric sheets) model is proposed to simplify the Volume integral equation (VIE) based on the TDS approximations when we solve the Electromagnetic (EM) scattering from layered dielectric structures. The tangential components of polarization current in each layer are approximated to linear variation along the transverse direction while constant in the normal direction. Similarly, the normal components are approximated to vary linearly in the normal direction and keep constant within a small patch in the tangential direction. Based on these approximations, and the divergence free and normal continuity conditions of D flux, a set of recursive formulations are derived out to reduce the number of independent basis functions, which are used to construct the polarization current. Then, we can further approximate the volume integrals in VIE to some surface integrals for far filed evaluation. The above TDS approximations can alleviate the difficulty of geometry discretization, reduce the number of unknowns, and shorten the time consumption of numerical calculation. The computational complexity of numerical simulation is reduced significantly.
- Dielectric scattering,
- Volume integral equation,
- Multi-layer TDS (Thin dielectric sheets) approximations

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References

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