A Novel Measure on Inversion Degree of Undoped Symmetric Double-Gate MOSFETs

The relation between the surface potentials of undoped SDG (Symmetric double-gate) MOSFET (Metal-oxide-silicon field effect transistor) and SG (Single-gate) MOSFET is carefully examined. A new quantity, called coupling potential, is introduced. It can be shown that the coupling potential offers an excellent measure on the inversion degree of undoped SDG MOSFET.