A Novel Measure on Inversion Degree of Undoped Symmetric Double-Gate MOSFETs[J]. Chinese Journal of Electronics, 2010, 19(3): 437-440.
Citation: A Novel Measure on Inversion Degree of Undoped Symmetric Double-Gate MOSFETs[J]. Chinese Journal of Electronics, 2010, 19(3): 437-440.

A Novel Measure on Inversion Degree of Undoped Symmetric Double-Gate MOSFETs

  • Received Date: 1900-01-01
  • Rev Recd Date: 1900-01-01
  • Publish Date: 2010-07-05
  • The relation between the surface potentials of undoped SDG (Symmetric double-gate) MOSFET (Metal-oxide-silicon field effect transistor) and SG (Single-gate) MOSFET is carefully examined. A new quantity, called coupling potential, is introduced. It can be shown that the coupling potential offers an excellent measure on the inversion degree of undoped SDG MOSFET.
  • loading
  • 加载中

Catalog

    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索

    Article Metrics

    Article views (601) PDF downloads(731) Cited by()
    Proportional views
    Related

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return