An Improved Gate Charge Model of HEMTs by Direct Formulating the Branch Charges

LIU Linsheng

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Article Navigation > Chinese Journal of Electronics > 2014 > 23(4): 673-677

LIU Linsheng, “An Improved Gate Charge Model of HEMTs by Direct Formulating the Branch Charges,” Chinese Journal of Electronics, vol. 23, no. 4, pp. 673-677, 2014,

Citation:

LIU Linsheng, “An Improved Gate Charge Model of HEMTs by Direct Formulating the Branch Charges,” Chinese Journal of Electronics, vol. 23, no. 4, pp. 673-677, 2014,

LIU Linsheng, “An Improved Gate Charge Model of HEMTs by Direct Formulating the Branch Charges,” Chinese Journal of Electronics, vol. 23, no. 4, pp. 673-677, 2014,

Citation:

LIU Linsheng, “An Improved Gate Charge Model of HEMTs by Direct Formulating the Branch Charges,” Chinese Journal of Electronics, vol. 23, no. 4, pp. 673-677, 2014,

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An Improved Gate Charge Model of HEMTs by Direct Formulating the Branch Charges

LIU Linsheng

Ericsson (China) Communications Co., Ltd., Chengdu 610041, China

Received Date: 2012-08-01
Rev Recd Date: 2014-05-01
Publish Date: 2014-10-05

Abstract

Abstract

We present an improved gate charge model for High electron mobility transistors (HEMTs) that is direct formulated from the branch charges. Different charge modeling procedures based on the charge conservation principle have been discussed and the proposed model is more accurate, easier to be implemented into commercial simulators. An improved modeling method on channel length modulation parameter to account for the drain-current kink effect of HEMTs has also been introduced. The nonlinear model is verified by comparing the measurements and simulations using 0.25-μm gate-length GaAs HEMT devices.
- Large-signal model,
- Equivalent circuit,
- Kink effect,
- High electron mobility transistors (HEMTs)

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References(16)

References

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