An Improved Global Shutter Pixel with Extended Output Range and Linearity of Compensation for CMOS Image Sensor

GUO Zhongjie; YU Ningmei; WU Longsheng

doi:10.1049/cje.2020.11.007

Volume 30 Issue 1

Jan. 2021

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GUO Zhongjie, YU Ningmei, WU Longsheng, “An Improved Global Shutter Pixel with Extended Output Range and Linearity of Compensation for CMOS Image Sensor,” Chinese Journal of Electronics, vol. 30, no. 1, pp. 102-108, 2021, doi: 10.1049/cje.2020.11.007

Citation:

GUO Zhongjie, YU Ningmei, WU Longsheng, “An Improved Global Shutter Pixel with Extended Output Range and Linearity of Compensation for CMOS Image Sensor,” Chinese Journal of Electronics, vol. 30, no. 1, pp. 102-108, 2021, doi: 10.1049/cje.2020.11.007

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An Improved Global Shutter Pixel with Extended Output Range and Linearity of Compensation for CMOS Image Sensor

doi: 10.1049/cje.2020.11.007

1.
School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China
2.
Xi'an Microelectronic Technology Institute, Xi'an 710054, China

Funds:

the National Natural Science Foundation of China 61771388

Scientific Research Project of Shaanxi Education Department 19JC029

More Information

Author Bio:
YU Ningmei received the B.S. degree in electronic engineering from the Xi'an University of Technology, Xi'an, China, in 1986 and the M.S. and Ph.D. degrees in electronic engineering from Tohoku University, Sendai, Japan, in 1996 and 1999, respectively. She is currently a Professor with the Department of Electric Engineering, Xi'an University of Technology. Her current research interests include very large scale integration circuit design. (Email: yunm@xaut.edu.cn)

WU Longsheng received the M.S. degree in microelectronics and solidstate electronics and the Ph.D. degree in computer system structure from the Institute of Microelectronics Technology, Xi'an, China, in 1994 and 2001, respectively. His current research interests include solid state image sensors design, hardening device, or circuit design for space applications. (Email: wls771@163.com)
Corresponding author: GUO Zhongjie (corresponding author) received the B.S. and M.S. degrees in Measurement and Control Technology and Instrumentation, and circuit and system from Xidian University, China, in 2004 and 2007, respectively, and Ph.D. degree in microelectronics engineering from Xi'an Microelectronic Technology Institute, China, in 2012. His current research interests include high performance mixed signal integration circuit design. (Email: zjguo@xaut.edu.cn)
Received Date: 2020-03-24
Accepted Date: 2020-07-30
Publish Date: 2021-01-01

Abstract

Abstract

An improved global shutter pixel structure with extended output range and linearity of compensation is proposed for CMOS image sensor. The potential switching of the sample and hold capacitor bottom plate outside the array is used to solve the problem of the serious swing limitation, which will attenuate the dynamic range of the image sensor. The non-linear problem caused by the substrate bias effect in the output process of the pixel source follower is solved by using the mirror FD point negative feedback self-establishment technology outside the array. The approach proposed in this paper has been verified in a global shutter CMOS image sensor with a scale of 1024×1024 pixels. The test results show that the output range is expanded from 0.95V to 2V, and the error introduced by the nonlinearity is sharply reduced from 280mV to 0.3mV. Most importantly, the output range expansion circuit does not increase the additional pixel area and the power consumption. The power consumption of linearity correction circuit is only 23.1μW, accounting for less than 0.01% of the whole chip power consumption.
- CMOS image sensor,
- Pixel,
- Global shutter,
- Output range,
- Linearity

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References(22)

References

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