Volume 30 Issue 1
Jan.  2021
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LIU Bingkai, LI Yudong, WEN Lin, ZHOU Dong, FENG Jie, ZHANG Xiang, CAI Yulong, FU Jing, GUO Qi. Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors[J]. Chinese Journal of Electronics, 2021, 30(1): 180-184. doi: 10.1049/cje.2020.12.002
Citation: LIU Bingkai, LI Yudong, WEN Lin, ZHOU Dong, FENG Jie, ZHANG Xiang, CAI Yulong, FU Jing, GUO Qi. Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors[J]. Chinese Journal of Electronics, 2021, 30(1): 180-184. doi: 10.1049/cje.2020.12.002

Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors

doi: 10.1049/cje.2020.12.002
Funds:

the National Natural Science Foundation of China 11675259

the National Natural Science Foundation of China 61704190

the National Natural Science Foundation of China 11805269

West Light Foundation of the Chinese Academy of Sciences 2016-QNXZ-B-8

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  • Author Bio:

    LIU Bingkai  received the B.S. degree from Xinjiang University in 2017. He is currently working toward the Ph.D. degree at the University of Chinese Academy of Sciences. His research interests include the radiation effects and mechanism of space-borne solid-state image sensors. (Email: liubingkai17@mails.ucas.ac.cn)

  • Corresponding author: LI Yudong  (corresponding author) received the Ph.D. degree in 2009 from Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences. He is now a researcher of Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences. His research interests include the radiation effects and mechanism, experimental evaluation method and radiation hardness design technology of spaceborne photoelectric devices and systems. (Email: lydong@ms.xjb.ac.cn)
  • Received Date: 2019-11-11
  • Accepted Date: 2020-06-15
  • Publish Date: 2021-01-01
  • The purpose of this work is to investigate the influence of the epitaxial layer thickness of Backside-illuminated CMOS image sensors (BSI CISs) on dark signal behaviors. BSI CISs with the high quantum efficiency and sensitivity were irradiated by 1 MeV neutron up to the fluences of 109cm−2. The displacement damage induced variations of the mean dark signal, Dark signal nonuniformity (DSNU), dark signal spikes and Random telegraph signal (RTS) on the different epitaxial layer thicknesses are analyzed. The experimental results show that there is no obvious correlation between the degradations of dark signal parameters and the epitaxial layer thickness, suggesting that the electric-optical performance of BSI CISs can be improved by optimizing the epitaxial layer thickness.
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