Volume 30 Issue 1
Jan.  2021
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LI Linqing, ZHU Haoran, NING Xingyu, LI Zunwen, WU Xianliang. A Miniaturized Bandwidth Reconfigurable Bandpass Chip Filter with Semi-lumped Topology and GaAs pHEMT Technology[J]. Chinese Journal of Electronics, 2021, 30(1): 192-198. doi: 10.1049/cje.2020.12.004
Citation: LI Linqing, ZHU Haoran, NING Xingyu, LI Zunwen, WU Xianliang. A Miniaturized Bandwidth Reconfigurable Bandpass Chip Filter with Semi-lumped Topology and GaAs pHEMT Technology[J]. Chinese Journal of Electronics, 2021, 30(1): 192-198. doi: 10.1049/cje.2020.12.004

A Miniaturized Bandwidth Reconfigurable Bandpass Chip Filter with Semi-lumped Topology and GaAs pHEMT Technology

doi: 10.1049/cje.2020.12.004
Funds:

the National Natural Science Foundation of China 61801001

the Key Natural Science Project of Anhui Provincial Education Department KJ2018A0020

the Major Project of Science and Technology of Anhui Province 18030901010

More Information
  • Author Bio:

    LI Linqing  was born in 1995. He received the B.S. degree in electronic information engineering from Anhui University, Hefei, China, in 2018, He is currently pursuing the M.S. degree in electromagnetic field and microwave technology. His research interest includes microwave circuit and system

    NING Xinyu  was born in 1994. He is currently pursuing M.S. degree in electromagnetic field and microwave technology at Anhui University, Hefei, China. His research interests include the microwave circuit

    LI Zunwen  was born in 1994. He was a Research Engineer in Anhui University. His research interests include microwave passive filter and RFID technology

    WU Xianliang  is a Full Professor with the Department of Electronic Engineering, a Director of the Laboratory of Electromagnetic Field and Microwave Technology with Anhui University, and the Principal with Hefei Normal University. His current research interests include electromagnetic field theory, electromagnetic scattering and inverse scattering, and wireless communication. Prof. Wu is a Senior Member of the Chinese Institute of Electronics. He is an Associate Director of the Chinese Electronic Institute of Antenna Propagation and the Chinese Institute of Microwave Measurement

  • Corresponding author: ZHU Haoran  (corresponding author) received the Ph.D. degree in electrical engineering at Shanghai Jiao Tong University, China in 2014. From 2014 to 2017, he has been a Senior Engineer with, East China Research Institute of Electronic Engineering. Since 2017, he is an Associate Professor of the School of Electronics and Information Engineering, Anhui University. From 2019, he is a Research Fellow of the Department of Electrical Computing Engineering, National University of Singapore. His research interests include the 3D integration technologies of antenna and RF circuit system, signal integrity and power integrity analysis of high speed mixed-signal system, miniaturized microwave integrated passive circuit. (Email: hrzhu86@gmail.com)
  • Received Date: 2020-05-27
  • Accepted Date: 2020-07-07
  • Publish Date: 2021-01-01
  • A miniaturized reconfigurable bandpass chip filter with semi-lumped topology and Gallium Arsenide pseudomorphic High electron mobility transistor (GaAs pHEMT) technology is proposed. Semi-lumped topology is employed to instead the traditional lumped inductor with microstrip transmission line, which can reduced the size of the tunable filter significantly. Three-order series and shunt resonated bandpass filter is implemented with shorted stubs and metal-insulator-metal capacitors. Two transmission zeros are introduced with the series resonator and the shunted GaAs FET. By tuning the gate bias circuit of the FET, the capacitance of the series resonator is changed and the bandwidth of the filter is adjusted correspondingly. An equivalent circuit model is developed to interpret the mechanism of the proposed filter circuit. A reconfigurable on chip filter sample operated at 10GHz is fabricated to validate the design. Two fractional bandwidth of 14.3% and 23.5% are tuned with bias voltage of the FET, while insertion loss of 2.4dB and 2.2dB are observed with the filter, respectively. The area of the chip filter is $ {{0.86 \times 0.96 \mathrm{mm}^{2}}} $ and is equivalent to an electrical length of $ {{0.08 \times 0.09 \lambda \mathrm{g}^{2} }}$ at center frequency. Measurement results agree well with the simulation ones.
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