Volume 30 Issue 2
Apr.  2021
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GUO Zhongjie, YU Ningmei, WU Longsheng. Research on Column FPN and Black Level Calibration in Large Array CMOS Image Sensor[J]. Chinese Journal of Electronics, 2021, 30(2): 268-274. doi: 10.1049/cje.2021.02.004
Citation: GUO Zhongjie, YU Ningmei, WU Longsheng. Research on Column FPN and Black Level Calibration in Large Array CMOS Image Sensor[J]. Chinese Journal of Electronics, 2021, 30(2): 268-274. doi: 10.1049/cje.2021.02.004

Research on Column FPN and Black Level Calibration in Large Array CMOS Image Sensor

doi: 10.1049/cje.2021.02.004

the National Natural Science Foundation of China 61771388

Scientific Research Project of Shaanxi Education Department 19JC029

More Information
  • Author Bio:

    YU Ningmei   received the B.S. degree in electronic engineering from the Xi'an University of Technology, Xi'an, China, in 1986 and the M.S. and Ph.D. degrees in electronic engineering from Tohoku University, Sendai, Japan, in 1996 and 1999, respectively. She is currently a professor with the Department of Electric Engineering, Xi'an University of Technology. Her current research interests include very large scale integration circuit design. (Email: yunm@xaut.edu.cn)

    WU Longsheng   received the M.S.degree in microelectronics and solid-state electronics and the Ph.D. degree in computer system structure from the Institute of Microelectronics Technology, Xi'an, China, in 1994 and 2001, respectively.His current research interests include solid state image sensors design, hardening device, or circuit design for space applications.(Email: wls771@163.com)

  • Corresponding author: GUO Zhongjie   (corresponding author) was born in Hancheng, China, in 1982. He received the B.S. and M.S. degrees in measurement and control technology and instrumentation, and circuit and system from Xidian University, China, in 2004 and 2007, respectively, and Ph.D. degree in microelectronics engineering from Xi'an Microelectronic Technology Institute, China, in 2012. His current research interests include high performance mixed signal integration circuit design. (Email: zjguo@xaut.edu.cn)
  • Received Date: 2018-06-01
  • Accepted Date: 2020-03-19
  • Publish Date: 2021-03-01
  • A technical investigation, research and implementation is presented to correct column fixed pattern noise and black level in large array Complementary metal oxide semiconductor (CMOS) image sensor. Through making a comparison among reported solution, and give large array CMOS image sensor design and considerations, according to our previous analysis on non-ideal factor and error source of piecewise Digital to analog converter (DAC) in multi-channels, an improving accurate piecewise DAC with adaptive switch technique is developed. The research theory has verified by a high dynamic range and low column Fixed pattern noise (FPN) CMOS image sensor prototype chip, which consisting of 8320×8320 pixel array was designed and fabricated in 55nm CMOS 1P4M standard process. The chip active area is 48mm×48mm with a pixel size of 5.7μm×5.7μm. The measured results achieved a high intrinsic dynamic range of 75dB, a low FPN and black level of 0.06%, a low photo response non-uniformity of 1.5% respectively, and an excellent raw sample image taken by the prototype sensor.
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