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Long WANG, Jixin CHEN, Debin HOU, et al., “An Ultra-wideband Doubler Chain With 43-65 dBc Fundamental Rejection in Ku/K/Ka Band,” Chinese Journal of Electronics, vol. 33, no. 4, pp. 1–14, 2024 doi: 10.23919/cje.2023.00.157
Citation: Long WANG, Jixin CHEN, Debin HOU, et al., “An Ultra-wideband Doubler Chain With 43-65 dBc Fundamental Rejection in Ku/K/Ka Band,” Chinese Journal of Electronics, vol. 33, no. 4, pp. 1–14, 2024 doi: 10.23919/cje.2023.00.157

An Ultra-wideband Doubler Chain With 43-65 dBc Fundamental Rejection in Ku/K/Ka Band

doi: 10.23919/cje.2023.00.157
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  • Author Bio:

    Long WANG received the M.S. degree from Hangzhou Dianzi University, Hangzhou, China, in 2018. He is currently pursuing the Ph.D. degree in Electronic Information with the Southeast University, Nanjing, China, where he is also with the MISIC Microelectronics as a trainee. His current research interests include mm-wave and sub-mmwave integrated circuits and transceivers.Mr. Wang was a recipient of the IEEE International Wireless Symposium (IWS) Best Student Paper Award in 2021, the Rohde-Schwarz Ph.D. Scholarship, the Vanchip Ph.D. Scholarship, and the ArchiwaveScholarship in 2023. (Email: longwang@seu.edu.cn)

    Jixin CHEN (Member, IEEE) was born in Jiangsu, China, in 1976. He received the B.S. degree in Radio Engineering and the M.S. and Ph.D. degrees in Electromagnetic Field and Microwave Technique from Southeast University, Nanjing, China, in 1998, 2002, and 2006, respectively.Since 1998, he has been with the State Key Laboratory of Millimeter Waves, Southeast University, where he is currently a Professor with the School of Information Science and Engineering and the Director of the Department of Electromagnetic Field and Microwave Engineering. His current research interest includes integration technology of millimeter-wave circuits and systems.Dr. Chen was a recipient of 2016 Keysight Early Career Professor Award and 2016 National Natural Science Prize Second Prize of China. He has served as a TPC Chair of NCMMW2021 and RFIT2019, and a TPC Co-Chair of HSIC2012 and UCMMT2012. (Email: jxchen@seu.edu.cn)

    Debin HOU (Member, IEEE) was born in Sichuan, China, in 1983. He received the B.S. degree from the School of Physical Electronics,, University of Electronic Science and Technology of China (UESTC) Chengdu, China, in 2007, and the Ph.D. degree from the School of Information Science and Technology, Southeast University, Nanjing, China, in 2013.He was with the Blekinge Institute of Technology (BTH), Karlskrona, Sweden, in 2009, and the Institute of Microelectronics (IME), AAgency for Science, Technology and Research (A*STAR), Singapore, as an Exchange Student, from 2010 to 2012. From 2013 to 2022, he was with the State Key Laboratory of Millimeter Waves, Southeast University. He has authored over 20 technical publications. He is now with the MISIC Microelectronics. His current research interests include silicon based/GaAs millimeter wave/terahertz on chip components, antennas, and integrated circuits.Dr. Hou received the Jiangsu Excellent 100 Doctoral Dissertation Prize in 2014. (Email: dbhou@misic.com.cn)

    Xiaojie XU received the B.S. and M.S degrees from the School of Information Science and Engineering, Southeast University, Nanjing, China, in 2010 and 2013, respectively.He is with MISIC Microelectronics, Nanjing, as a Senior Engineer, from 2020 to present. His current research interests include millimeter-wave integrated circuits and systems for high-speed wireless communication. (Email: xjxu@misic.com.cn)

    Zekun LI was born in Fujian, China, in 1996. He received the B.S. degree from the School of Information Science andEngineering, Southeast University, Nanjing, China,in 2018, where he is currently pursuing the Ph.D.degree.His current research is focused on silicon-based millimeter-wave and terahertz integrated circuits andsystems for high-speed wireless communication and radar. (Email: zkli@seu.edu.cn)

    Dawei TANG (Student Member, IEEE) was born in Sichuan, China, in 1998. He received the B.S. degree in Electronics Science and technology from Southwest Jiaotong University, Chengdu, China, in 2020. He is currently pursuing the Ph.D. degree in Electronics Science and Technology with Southeast University, Nanjing, China.His research interests focus on millimeter-wave and terahertz integrated circuits and systems for high-speed wireless communication. (Email: tangdawei@seu.edu.cn)

    Rui ZHOU was born in Anhui, China, in 1995. He received the B.S. and M.S. degrees from the School of Information Science and Engineering, Southeast University, Nanjing, China, in 2018 and 2020, respectively, where he is currently pursuing the Ph.D. degree.His current research is focused on silicon-based millimeter-wave and terahertz integrated circuits and high-resolution radar system design. (Email: rzhou21@seu.edu.cn)

    Hao QI received M.S. degree in Integred Circuit from School of Electronic information, Hangzhou dianzi University, Hangzhou, China, in 2020.Since 2020, he has been with MISIC Microelectronics as a Senior Engineer, Nanjing, China. (Email: qihaoz7@163.com)

    Yu XIANG received the B.S. degree from the School of Physical Electronics, University of Electronic Science and Technology of China (UESTC), Chengdu China, in 2011, and the Master degree from the School of Information Science and Technology, Southeast University, Nanjing, China, in 2014. Since 2016, she has been with MISIC Microelectronics, Nanjing, China. (Email: yuxiang@misic.com.cn)

  • Corresponding author: Email: jxchen@seu.edu.cn
  • Received Date: 2023-03-22
  • Accepted Date: 2023-03-22
  • Available Online: 2023-03-22
  • In this paper, a double-balanced doubler chain with >43-dBc fundamental rejection over an ultra-wide bandwidth in 0.13-μm SiGe BiCMOS technology is proposed. To achieve high fundamental rejection, high output power, and high conversion gain over an ultra-wideband, a double-balanced doubler chain with pre- and post-drivers employs a bandwidth broadening technique and a ground shielding strategy. Analysis and comparison of single-balanced and double-balanced doublers were conducted, focusing on their fundamental rejection and circuit imbalance. Three doublers, a passive single-balanced doubler, an active single-balanced doubler, and a passive double-balanced doubler, were designed to verify the performance and characteristics of the single- and double-balanced doublers. Measurements show that the proposed double-balanced doubler chain has about 15-dB better fundamental rejection, and over more than twice the relative bandwidth compared to the single-balanced doubler chain fabricated with the same process. Over an 86.9% 3-dB bandwidth from 13.4 to 34 GHz, the double-balanced doubler chain delivers 14.7-dBm peak output power and >43-/33-dBc fundamental/third-harmonic rejection. To the authors’ best knowledge, the proposed double-balanced doubler chain shows the highest fundamental rejection over an ultra-wideband among silicon-based doublers at millimeter-wave frequency bands.
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