Citation: | Wenbo LI, Hongxin ZENG, Lin HUANG, et al., “A Review of Terahertz Solid-state Electronic/Optoelectronic Devices and Communication Systems,” Chinese Journal of Electronics, vol. x, no. x, pp. 1–23, xxxx doi: 10.23919/cje.2023.00.282 |
[1] |
L. Zhang, X. D. Pang, S. Jia, et al., “Beyond 100 Gb/s optoelectronic terahertz communications: Key technologies and directions,” IEEE Communications Magazine, vol. 58, no. 11, pp. 34–40, 2020. doi: 10.1109/MCOM.001.2000254
|
[2] |
H. Elayan, O. Amin, B. Shihada, et al., “Terahertz band: The last piece of RF spectrum puzzle for communication systems,” IEEE Open Journal of the Communications Society, vol. 1 pp. 1–32, 2020. doi: 10.1109/OJCOMS.2019.2953633
|
[3] |
X. Y. Li, J. J. Yu, L. Zhao, et al., “1-Tb/s millimeter-wave signal wireless delivery at D-band,” Journal of Lightwave Technology, vol. 37, no. 1, pp. 196–204, 2019. doi: 10.1109/JLT.2018.2871472
|
[4] |
H. Yang, S. L. Zheng, H. Q. Zhang, et al., “A THz-OAM wireless communication system based on transmissive metasurface,” IEEE Transactions on Antennas and Propagation, vol. 71, no. 5, pp. 4194–4203, 2023. doi: 10.1109/TAP.2023.3255539
|
[5] |
Y. Morishita, S. Lee, T. Teraoka, et al., “300-GHz-Band OFDM video transmission with CMOS TX/RX modules and 40dBi cassegrain antenna toward 6G,” IEICE Transactions on Electronics, vol. E104.C, no. 10, pp. 576–586, 2021. doi: 10.1587/transele.2021MMP0005
|
[6] |
H. Hamada, T. Fujimura, I. Abdo, et al. , “300-GHz. 100-Gb/s InP-HEMT wireless transceiver using a 300-GHz fundamental mixer, ” in Proceedings of 2018 IEEE/MTT-S International Microwave Symposium - IMS, Philadelphia, PA, USA, pp. 1480–1483, 2018.
|
[7] |
H. Hamada, T. Tsutsumi, H. Matsuzaki, et al., “300-GHz-Band 120-Gb/s wireless front-end based on InP-HEMT PAs and mixers,” IEEE Journal of Solid-State Circuits, vol. 55, no. 9, pp. 2316–2335, 2020. doi: 10.1109/JSSC.2020.3005818
|
[8] |
I. Dan, G. Ducournau, S. Hisatake, et al., “A terahertz wireless communication link using a superheterodyne approach,” IEEE Transactions on Terahertz Science and Technology, vol. 10, no. 1, pp. 32–43, 2020. doi: 10.1109/TTHZ.2019.2953647
|
[9] |
Y. Liu, B. Zhang, Y. N. Feng, et al., “10-Gbps real-time wireless link over 1.5 km at 220-GHz band based on Schottky-diode transceiver and 16-QAM modulation,” AEU - International Journal of Electronics and Communications, vol. 138 article no. 153874, 2021. doi: 10.1016/j.aeue.2021.153874
|
[10] |
M. H. Eissa, A. Malignaggi, R. Y. Wang, et al., “Wideband 240-GHz transmitter and receiver in BiCMOS technology with 25-Gbit/s data rate,” IEEE Journal of Solid-State Circuits, vol. 53, no. 9, pp. 2532–2542, 2018. doi: 10.1109/JSSC.2018.2839037
|
[11] |
P. Rodríguez-Vázquez, J. Grzyb, B. Heinemann, et al., “A 16-QAM 100-Gb/s 1-M wireless link with an EVM of 17% at 230 GHz in an SiGe technology,” IEEE Microwave and Wireless Components Letters, vol. 29, no. 4, pp. 297–299, 2019. doi: 10.1109/LMWC.2019.2899487
|
[12] |
Y. N. Feng, B. Zhang, C. Zhi, et al., “A 20.8-Gbps dual-carrier wireless communication link in 220-GHz band,” China Communications, vol. 18, no. 5, pp. 210–220, 2021. doi: 10.23919/JCC.2021.05.013
|
[13] |
P. Sen, J. V. Siles, N. Thawdar, et al., “Multi-kilometre and multi-gigabit-per-second sub-terahertz communications for wireless backhaul applications,” Nature Electronics, vol. 6, no. 2, pp. 164–175, 2022. doi: 10.1038/s41928-022-00897-6
|
[14] |
C. Yi, S. H. Choi, M. Urteaga, et al., “20-Gb/s ON–OFF-keying modulators using 0.25- μm InP DHBT switches at 290 GHz,” IEEE Microwave and Wireless Components Letters, vol. 29, no. 5, pp. 360–362, 2019. doi: 10.1109/LMWC.2019.2908878
|
[15] |
A. Standaert and P. Reynaert, “A 390-GHz outphasing transmitter in 28-nm CMOS,” IEEE Journal of Solid-State Circuits, vol. 55, no. 10, pp. 2703–2713, 2020. doi: 10.1109/JSSC.2020.3006433
|
[16] |
Y. Liang, C. C. Boon, H. C. Zhang, et al., “A 13.5-Gb/s 140-GHz silicon redriver exploiting metadevices for short-range OOK communications,” IEEE Transactions on Microwave Theory and Techniques, vol. 70, no. 1, pp. 239–253, 2022. doi: 10.1109/TMTT.2021.3124215
|
[17] |
Z. Mehmood and M. Seo, “A high speed OOK modulator at 300 GHz using LO cancellation technique, ” in Proceedings of 2021 18th International SoC Design Conference, Jeju Island, Korea, Republic of, pp. 95–96, 2021.
|
[18] |
D. Pirrone, A. Ferraro, D. C. Zografopoulos, et al., “Metasurface-based filters for high data rate THz wireless communication: Experimental validation of a 14 Gbps OOK and 104 Gbps QAM-16 wireless link in the 300 GHz band,” IEEE Transactions on Wireless Communications, vol. 21, no. 10, pp. 8688–8697, 2022. doi: 10.1109/TWC.2022.3168399
|
[19] |
Y. X. Zhang, K. S. Ding, H. X. Zeng, et al., “Ultrafast modulation of terahertz waves using on-chip dual-layer near-field coupling,” Optica, vol. 9, no. 11, pp. 1268–1275, 2022. doi: 10.1364/OPTICA.469461
|
[20] |
T. C. Zhou, Y. Z. Dong, S. Gong, et al., “A sub-terahertz high-speed traveling-wave switch modulator based on dynamically tunable double-resonant coupling units,” IEEE Transactions on Microwave Theory and Techniques, vol. 71, no. 10, pp. 4346–4356, 2023. doi: 10.1109/TMTT.2023.3260404
|
[21] |
S. Jia, X. D. Pang, O. Ozolins, et al., “0.4 THz photonic-wireless link with 106 Gb/s single channel bitrate,” Journal of Lightwave Technology, vol. 36, no. 2, pp. 610–616, 2018. doi: 10.1109/JLT.2017.2776320
|
[22] |
S. Ummethala, T. Harter, K. Koehnle, et al., “THz-to-optical conversion in wireless communications using an ultra-broadband plasmonic modulator,” Nature Photonics, vol. 13, no. 8, pp. 519–524, 2019. doi: 10.1038/s41566-019-0475-6
|
[23] |
S. W. Wang, Z. J. Lu, W. Li, et al., “26.8-m THz wireless transmission of probabilistic shaping 16-QAM-OFDM signals,” APL Photonics, vol. 5, no. 5, article no. 056105, 2020. doi: 10.1063/5.0003998
|
[24] |
H. Q. Zhang, L. Zhang, S. W. Wang, et al. , “Aggregated 1.059 Tbit/s photonic-wireless transmission at 350 GHz over 10 meters, ” in Proceedings of the 26th Optoelectronics and Communications Conference, Hong Kong, China, article no. T5A. 3, 2021.
|
[25] |
T. Harter, S. Ummethala, M. Blaicher, et al., “Wireless THz link with optoelectronic transmitter and receiver,” Optica, vol. 6, no. 8, pp. 1063–1070, 2019. doi: 10.1364/OPTICA.6.001063
|
[26] |
S. Jia, L. Zhang, S. W. Wang, et al., “2 × 300 Gbit/s line rate PS-64QAM-OFDM THz photonic-wireless transmission,” Journal of Lightwave Technology, vol. 38, no. 17, pp. 4715–4721, 2020. doi: 10.1109/JLT.2020.2995702
|
[27] |
S. R. Moon, M. Sung, J. K. Lee, et al., “Cost-effective photonics-based THz wireless transmission using PAM-N signals in the 0.3 THz band,” Journal of Lightwave Technology, vol. 39, no. 2, pp. 357–362, 2021. doi: 10.1109/JLT.2020.3032613
|
[28] |
S. Nellen, S. Lauck, E. Peytavit, et al., “Coherent wireless link at 300 GHz with 160 Gbit/s enabled by a photonic transmitter,” Journal of Lightwave Technology, vol. 40, no. 13, pp. 4178–4185, 2022. doi: 10.1109/JLT.2022.3160096
|
[29] |
H. J. Zhou, Y. X. Zhang, S. X. Liang, et al. , “0.22THz wideband doubler based on a single-chip GaAs monolithic integration, ” in Proceedings of 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves, Delft, Netherlands, pp. 1–2, 2022.
|
[30] |
T. Skaik, C. Viegas, J. Powell, et al., “125 GHz frequency doubler using a waveguide cavity produced by stereolithography,” IEEE Transactions on Terahertz Science and Technology, vol. 12, no. 2, pp. 217–220, 2022. doi: 10.1109/TTHZ.2021.3131915
|
[31] |
X. Z. Wen, H. D. Yang, Z. X. Wu, et al., “A 100–180-GHz coaxial frequency Tripler based on copper additive manufacturing,” IEEE Transactions on Microwave Theory and Techniques, vol. 71, no. 10, pp. 4337–4345, 2023. doi: 10.1109/TMTT.2023.3254304
|
[32] |
C. Guo, X. Z. Wen, Z. X. Wu, et al., “A 135–150 GHz high-power frequency tripler with filtering matching network,” IEEE Microwave and Wireless Components Letters, vol. 32, no. 11, pp. 1327–1330, 2022. doi: 10.1109/LMWC.2022.3177252
|
[33] |
S. X. Liang, X. B. Song, L. S. Zhang, et al., “A 177–183 GHz high-power GaN-based frequency doubler with over 200 mW output power,” IEEE Electron Device Letters, vol. 41, no. 5, pp. 669–672, 2020. doi: 10.1109/LED.2020.2981939
|
[34] |
Z. K. Li, J. X. Chen, D. W. Tang, et al., “A 205–273-GHz frequency multiplier chain (×6) with 9-dBm output power and 1.92% DC-to-RF efficiency in 0.13-µm SiGe BiCMOS,” IEEE Transactions on Microwave Theory and Techniques, vol. 71, no. 7, pp. 2909–2919, 2023. doi: 10.1109/TMTT.2023.3238765
|
[35] |
Z. G. Peng, J. J. Chen, H. Wang, et al., “A 208-GHz injection locking doubler chain with 3.2% PAE and 2.9-mW output power in CMOS technology,” IEEE Microwave and Wireless Components Letters, vol. 32, no. 4, pp. 351–354, 2022. doi: 10.1109/LMWC.2021.3129545
|
[36] |
H. P. Fu, K. Li, and K. X. Ma, “A 208–233-GHz frequency doubler with 1.1% power-added efficiency in 28-nm CMOS,” IEEE Microwave and Wireless Components Letters, vol. 32, no. 11, pp. 1311–1314, 2022. doi: 10.1109/LMWC.2022.3180082
|
[37] |
J. Y. Yu, J. X. Chen, P. G. Zhou, et al., “A 300-GHz transmitter front end with −4.1-dBm peak output power for sub-THz communication using 130-nm SiGe BiCMOS technology,” IEEE Transactions on Microwave Theory and Techniques, vol. 69, no. 11, pp. 4925–4936, 2021. doi: 10.1109/TMTT.2021.3103574
|
[38] |
K. Z. Guo and P. Reynaert, “A 510-to-545 GHz radiating source with an SIW-based harmonic power extractor in 40-nm CMOS,” IEEE Transactions on Terahertz Science and Technology, vol. 12, no. 3, pp. 245–256, 2022. doi: 10.1109/TTHZ.2022.3167012
|
[39] |
J. V. Siles, K. B. Cooper, C. Lee, et al., “A new generation of room-temperature frequency-multiplied sources with up to 10× higher output power in the 160-GHz–1.6-THz range,” IEEE Transactions on Terahertz Science and Technology, vol. 8, no. 6, pp. 596–604, 2018. doi: 10.1109/TTHZ.2018.2876620
|
[40] |
Y. L. Tian, K. Huang, Y. He, et al., “A novel balanced frequency tripler with improved power capacity for submillimeter-wave application,” IEEE Microwave and Wireless Components Letters, vol. 31, no. 8, pp. 925–928, 2021. doi: 10.1109/LMWC.2021.3084622
|
[41] |
W. Kou, S. X. Liang, H. J. Zhou, et al., “A review of terahertz sources based on planar schottky diodes,” Chinese Journal of Electronics, vol. 31, no. 3, pp. 467–487, 2022. doi: 10.1049/cje.2021.00.302
|
[42] |
H. M. Wei, J. T. Zhou, and Y. Zhang, “Design of a monolithic integrated high-efficiency 280 GHz frequency Tripler, ” in Proceedings of 2023 International Conference on Microwave and Millimeter Wave Technology, Qingdao, China, pp. 1–3, 2023.
|
[43] |
X. B. Song, S. X. Liang, Y. J. Lv, et al., “GaN-based frequency doubler with pulsed output power over 1 W at 216 GHz,” IEEE Electron Device Letters, vol. 42, no. 12, pp. 1739–1742, 2021. doi: 10.1109/LED.2021.3119391
|
[44] |
N. Erickson, “High efficiency submillimeter frequency multipliers, ” in Proceedings of the IEEE International Digest on Microwave Symposium, Dallas, TX, USA, pp. 1301–1304, 1990.
|
[45] |
D. Moro-Melgar, O. Cojocari, and I. Oprea, “High power high efficiency 270-320 GHz source based on discrete schottky diodes, ” in Proceedings of the 15th European Radar Conference, Madrid, Spain, pp. 337–340, 2018.
|
[46] |
D. Moro-Melgar, O. Cojocari, and I. Oprea, “High power high efficiency 475-520 GHz source based on discrete schottky diodes, ” in Proceedings of 2020 50th European Microwave Conference, Utrecht, Netherlands, pp. 607–610, 2021.
|
[47] |
Y. Z. Dong, H. J. Liang, S. X. Liang, et al., “High-efficiency GaN frequency doubler based on thermal resistance analysis for continuous wave input,” IEEE Transactions on Electron Devices, vol. 70, no. 9, pp. 4565–4571, 2023. doi: 10.1109/TED.2023.3294897
|
[48] |
Y. X. Zhang, W. F. Liang, C. Esposito, et al., “LO chain (×12) integrated 190-GHz low-power SiGe receiver with 49-dB conversion gain and 171-mW DC power consumption,” IEEE Transactions on Microwave Theory and Techniques, vol. 69, no. 3, pp. 1943–1954, 2021. doi: 10.1109/TMTT.2020.3044095
|
[49] |
C. Viegas, J. Powell, H. R. Liu, et al., “On-chip integrated backshort for relaxation of machining accuracy requirements in frequency multipliers,” IEEE Microwave and Wireless Components Letters, vol. 31, no. 2, pp. 188–191, 2021. doi: 10.1109/LMWC.2020.3033440
|
[50] |
L. D. Cohen, S. Nussbaum, E. Kraemer, et al. , “Varactor frequency doublers and triplers for the 200 to 300 GHz range, ” in Proceedings of 1975 IEEE-MTT-S International Microwave Symposium, Palo Alton, CA, USA, pp. 274–276, 1975.
|
[51] |
A. I. Hadarig, S. Ver Hoeye, M. Fernández, et al., “330-500 GHz graphene-based single-stage high-order subharmonic mixer,” IEEE Access, vol. 7 pp. 113151–113160, 2019. doi: 10.1109/ACCESS.2019.2935310
|
[52] |
H. R. Jeon, B. H. Yun, H. K. Lee, et al., “A 250-GHz wideband direct-conversion CMOS receiver adopting baseband equalized low-loss resistive passive mixer,” IEEE Transactions on Circuits and Systems II:Express Briefs, vol. 70, no. 10, pp. 3852–3856, 2023. doi: 10.1109/TCSII.2023.3289215
|
[53] |
V. S. Trinh, J. M. Song, and J. D. Park, “A 260–300-GHz mixer-first IQ receiver with fundamental LO driver in 130-nm SiGe process,” IEEE Microwave and Wireless Technology Letters, vol. 33, no. 4, pp. 435–438, 2023. doi: 10.1109/LMWT.2022.3228646
|
[54] |
C. Guo, X. B. Shang, M. J. Lancaster, et al., “A 290–310 GHz single sideband mixer with integrated waveguide filters,” IEEE Transactions on Terahertz Science and Technology, vol. 8, no. 4, pp. 446–454, 2018. doi: 10.1109/TTHZ.2018.2841771
|
[55] |
A. Güner, T. Mausolf, J. Wessel, et al., “A 440–540-GHz subharmonic mixer in 130-nm SiGe BiCMOS,” IEEE Microwave and Wireless Components Letters, vol. 30, no. 12, pp. 1161–1164, 2020. doi: 10.1109/LMWC.2020.3030315
|
[56] |
B. Zhang, Y. Zhang, L. C. Pan, et al., “A 560 GHz sub-harmonic mixer using half-global design method,” Electronics, vol. 10, no. 3, article no. 234, 2021. doi: 10.3390/electronics10030234
|
[57] |
Y. Liu, Z. Q. Niu, B. Zhang, et al., “A high-performance 330-GHz subharmonic mixer using schottky diodes,” IEEE Microwave and Wireless Components Letters, vol. 32, no. 6, pp. 571–574, 2022. doi: 10.1109/LMWC.2022.3149378
|
[58] |
G. Y. Ji, D. H. Zhang, J. Meng, et al., “A novel 183 GHz solid-state sub-harmonic mixer,” Electronics, vol. 9, no. 1, article no. 186, 2020. doi: 10.3390/electronics9010186
|
[59] |
J. Zhou and X. Luo, “An 820-GHz down-converter with fourth subharmonic mixer in 40-nm CMOS technology,” IEEE Microwave and Wireless Components Letters, vol. 31, no. 10, pp. 1146–1149, 2021. doi: 10.1109/LMWC.2021.3105578
|
[60] |
D. F. Ji, B. Zhang, J. L. Wang, et al., “Analysis of welding pad for terahertz hybrid integrated mixer,” IEEE Access, vol. 8 pp. 22506–22514, 2020. doi: 10.1109/ACCESS.2020.2968080
|
[61] |
D. Pardo, B. N. Ellison, P. G. Huggard, et al. , “Development of techniques for the design of a 3.5 THz fundamental balanced schottky heterodyne mixer, ” in Proceedings of 2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, Brive La Gaillarde, France, pp. 1–3, 2018.
|
[62] |
C. Vázquez Antuña, A. I. Hadarig, S. Ver Hoeye, et al., “High-order subharmonic millimeter-wave mixer based on few-layer graphene,” IEEE Transactions on Microwave Theory and Techniques, vol. 63, no. 4, pp. 1361–1369, 2015. doi: 10.1109/TMTT.2015.2403854
|
[63] |
H. X. Li, X. Gao, X. Y. Bu, et al., “The design methods and experiments for a 220-GHz quasi-optical cryogenic schottky subharmonic mixer of high performance,” IEEE Transactions on Microwave Theory and Techniques, vol. 71, no. 7, pp. 2897–2908, 2023. doi: 10.1109/TMTT.2023.3238814
|
[64] |
A. A. Ibrahim, H. N. Shaman, and K. Sarabandi, “A sub-THz rectangular waveguide phase shifter using piezoelectric-based tunable artificial magnetic conductor,” IEEE Transactions on Terahertz Science and Technology, vol. 8, no. 6, pp. 666–680, 2018. doi: 10.1109/TTHZ.2018.2866018
|
[65] |
J. Yang, C. G. Cai, Z. P. Yin, et al. , “Reflective liquid crystal terahertz phase shifter with tuning range of over 360°, ” IET Microwaves, Antennas & Propagation, vol. 12, no. 9, pp. 1466–1469, 2018.
|
[66] |
P. V. Testa, C. Carta, and F. Ellinger, “A 140–210 GHz low-power vector-modulator phase shifter in 130nm SiGe BiCMOS technology, ” in Proceedings of 2018 Asia-Pacific Microwave Conference, Kyoto, Japan, pp. 530–532, 2018.
|
[67] |
Y. Z. Hu, T. Jiang, J. H. Zhou, et al., “Ultrafast terahertz frequency and phase tuning by all‐optical molecularization of metasurfaces,” Advanced Optical Materials, vol. 7, no. 22, article no. 1901050, 2019. doi: 10.1002/adom.201901050
|
[68] |
P. V. Testa, C. Carta, and F. Ellinger, “A 160–190-GHz vector-modulator phase shifter for low-power applications,” IEEE Microwave and Wireless Components Letters, vol. 30, no. 1, pp. 86–89, 2020. doi: 10.1109/LMWC.2019.2952766
|
[69] |
X. H. Zhao, U. Shah, O. Glubokov, et al., “Micromachined subterahertz waveguide-integrated phase shifter utilizing supermode propagation,” IEEE Transactions on Microwave Theory and Techniques, vol. 69, no. 7, pp. 3219–3227, 2021. doi: 10.1109/TMTT.2021.3076079
|
[70] |
M. Pourmand and P. K. Choudhury, “Nanostructured strontium titanate perovskite hyperbolic metamaterial supported tunable broadband THz Brewster modulator,” IEEE Transactions on Nanotechnology, vol. 21 pp. 586–591, 2022. doi: 10.1109/TNANO.2022.3210111
|
[71] |
D. Y. Ping, S. Gong, K. S. Ding, et al. , “A 140GHz terahertz amplitude direct modulator based on schottky diode, ” in Proceedings of 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves, Delft, Netherlands, pp. 1–2, 2022.
|
[72] |
H. X. Zeng, S. Gong, L. Wang, et al., “A review of terahertz phase modulation from free space to guided wave integrated devices,” Nanophotonics, vol. 11, no. 3, pp. 415–437, 2022. doi: 10.1515/nanoph-2021-0623
|
[73] |
G. Isić, G. Sinatkas, D. C. Zografopoulos, et al., “Electrically tunable metal–semiconductor–metal terahertz metasurface modulators,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 25, no. 3, article no. 8500108, 2019. doi: 10.1109/JSTQE.2019.2893762
|
[74] |
H. X. Zeng, H. J. Liang, L. Wang, et al., “High-precision digital terahertz phase manipulation within a multichannel field perturbation coding chip,” Nature Photonics, vol. 15, no. 10, pp. 751–757, 2021. doi: 10.1038/s41566-021-00851-6
|
[75] |
Y. C. Zhao, L. Wang, Y. X. Zhang, et al., “High-speed efficient terahertz modulation based on tunable collective-individual state conversion within an active 3 nm two-dimensional electron gas metasurface,” Nano Letters, vol. 19, no. 11, pp. 7588–7597, 2019. doi: 10.1021/acs.nanolett.9b01273
|
[76] |
M. Z. Jiang, X. L. Xu, F. R. Hu, et al., “Low-voltage triggered VO2 hybrid metasurface used for amplitude modulation of terahertz orthogonal modes,” Journal of Lightwave Technology, vol. 40, no. 1, pp. 156–162, 2022. doi: 10.1109/JLT.2021.3120730
|
[77] |
A. M. Zaman, Y. Z. Lu, X. Romain, et al., “Terahertz metamaterial optoelectronic modulators with GHz reconfiguration speed,” IEEE Transactions on Terahertz Science and Technology, vol. 12, no. 5, pp. 520–526, 2022. doi: 10.1109/TTHZ.2022.3178875
|
[78] |
M. H. Eissa and D. Kissinger, “4.5 A 13.5dBm fully integrated 200-to-255GHz power amplifier with a 4-way power combiner in SiGe: C BiCMOS, ” in Proceedings of 2019 IEEE International Solid-State Circuits Conference, San Francisco, CA, USA, pp. 82–84, 2019.
|
[79] |
H. Hamada, T. Tsutsumi, A. Pander, et al., “220–325-GHz 25-dB-gain differential amplifier with high common-mode-rejection circuit in 60-nm InP-HEMT technology,” IEEE Microwave and Wireless Components Letters, vol. 31, no. 6, pp. 709–712, 2021. doi: 10.1109/LMWC.2021.3061662
|
[80] |
Z. Griffith, M. Urteaga, P. Rowell, et al., “A 150–175-GHz 30-dB S21 power amplifier with 125-mW Pout and 16.2% PAE using InP HBT,” IEEE Microwave and Wireless Components Letters, vol. 32, no. 6, pp. 559–562, 2022. doi: 10.1109/LMWC.2021.3140029
|
[81] |
X. C. Li, W. H. Chen, Y. F. Wang, et al. , “A 160 GHz high output power and high efficiency power amplifier in a 130-nm SiGe BiCMOS technology, ” in Proceedings of 2020 IEEE Radio Frequency Integrated Circuits Symposium, Los Angeles, CA, USA, pp. 199–202, 2020.
|
[82] |
Z. Griffith, M. Urteaga, P. Rowell, et al. , “A 160-183 GHz 0.24-W (7.5% PAE) PA and 0.14-W (9.5% PAE) PA, high-gain, G-band power amplifier MMICs in 250-nm InP HBT, ” in Proceedings of 2020 IEEE/MTT-S International Microwave Symposium, Los Angeles, CA, USA, pp. 488–491, 2020.
|
[83] |
A. S. H. Ahmed, U. Soylu, M. Seo, et al. , “A 190-210GHz power amplifier with 17.7-18.5dBm output power and 6.9-8.5% PAE, ” in Proceedings of 2021 IEEE MTT-S International Microwave Symposium, Atlanta, GA, USA, pp. 787–790, 2021.
|
[84] |
J. Y. Yu, J. X. Chen, P. G. Zhou, et al., “A 211-to-263-GHz dual- LC-tank-based broadband power amplifier with 14.7-dBm PSAT and 16.4-dB peak gain in 130-nm SiGe BiCMOS,” IEEE Journal of Solid-State Circuits, vol. 58, no. 2, pp. 332–344, 2023. doi: 10.1109/JSSC.2022.3192043
|
[85] |
Y. P. Chen, Y. Zhang, Y. Sun, et al., “A 220-GHz InP DHBT power amplifier with integrated planar spatial power combiner,” IEEE Microwave and Wireless Components Letters, vol. 29, no. 3, pp. 225–227, 2019. doi: 10.1109/LMWC.2019.2891893
|
[86] |
Z. K. Li, J. X. Chen, H. B. Li, et al., “A 220-GHz power amplifier with 22.5-dB gain and 9-dBm Psat in 130-nm SiGe,” IEEE Microwave and Wireless Components Letters, vol. 31, no. 10, pp. 1166–1169, 2021. doi: 10.1109/LMWC.2021.3105611
|
[87] |
H. B. Li, J. X. Chen, D. B. Hou, et al., “A 230-GHz SiGe amplifier with 21.8-dB gain and 3-dBm output power for sub-THz receivers,” IEEE Microwave and Wireless Components Letters, vol. 31, no. 8, pp. 1004–1007, 2021. doi: 10.1109/LMWC.2021.3090466
|
[88] |
T. Jyo, M. Nagatani, M. Ida, et al. , “A 241-GHz-bandwidth distributed amplifier with 10-dBm P1dB in 0.25-μm InP DHBT technology, ” in Proceedings of 2019 IEEE MTT-S International Microwave Symposium, Boston, MA, USA, pp. 1430–1433, 2019.
|
[89] |
X. C. Li, W. H. Chen, P. G. Zhou, et al., “A 250–310 GHz Power amplifier with 15-dB peak gain in 130-nm SiGe BiCMOS process for terahertz wireless system,” IEEE Transactions on Terahertz Science and Technology, vol. 12, no. 1, pp. 1–12, 2022. doi: 10.1109/TTHZ.2021.3099057
|
[90] |
X. X. Tian, N. X. Zhu, Z. H. Liu, et al. , “A compact 210-to-250 GHz quad-stacked power amplifier in 0.13-μm SiGe BiCMOS, ” in Proceedings of 2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, Guangzhou, China, pp. 1–3, 2022.
|
[91] |
B. Zhang, Y. Zhang, Z. Dang, et al. , “A compact and high-efficiency 220-GHz power amplifier module based on TE11-mode radial power combiner, ” IEEE Transactions on Microwave Theory and Techniques, in press, 2023.
|
[92] |
X. C. Li, W. H. Chen, S. Y. Li, et al., “A high-efficiency 142–182-GHz SiGe BiCMOS power amplifier with broadband slotline-based power combining technique,” IEEE Journal of Solid-State Circuits, vol. 57, no. 2, pp. 371–384, 2022. doi: 10.1109/JSSC.2021.3107428
|
[93] |
J. S. C. Chien, W. Lee, and J. F. Buckwalter, “High-efficiency 200-GHz neutralized common-base power amplifiers in 250-nm InP HBT,” IEEE Journal of Microwaves, vol. 3, no. 2, pp. 715–725, 2023. doi: 10.1109/JMW.2023.3249203
|
[94] |
P. Stärke, C. Carta, and F. Ellinger, “High-linearity 19-dB power amplifier for 140–220 GHz, saturated at 15 dBm, in 130-nm SiGe,” IEEE Microwave and Wireless Components Letters, vol. 30, no. 4, pp. 403–406, 2020. doi: 10.1109/LMWC.2020.2978397
|
[95] |
J. Romstadt, V. Lammert, N. Pohl, et al. , “Transformer-coupled D-band PA with 11.8 dbm Psat and 6.3 % PAE in 0.13μm SiGe BiCMOS, ” in Proceedings of 2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, San Antonio, TX, USA, pp. 77–80, 2020.
|
[96] |
C. M. Cooke, K. Leong, A. Escorcia, et al. , “A 220 GHz dual channel LNA front-end for a direct detection polarimetric receiver, ” in Proceedings of 2019 IEEE MTT-S International Microwave Symposium, Boston, MA, USA, pp. 508–511, 2019.
|
[97] |
H. B. Li, J. X. Chen, D. B. Hou, et al., “A 250-GHz differential SiGe amplifier with 21.5-dB gain for sub-THz transmitters,” IEEE Transactions on Terahertz Science and Technology, vol. 10, no. 6, pp. 624–633, 2020. doi: 10.1109/TTHZ.2020.3019361
|
[98] |
B. Yun, D. W. Park, H. U. Mahmood, et al., “A D-band high-gain and low-power LNA in 65-nm CMOS by adopting simultaneous noise- and input-matched Gmax -core,” IEEE Transactions on Microwave Theory and Techniques, vol. 69, no. 5, pp. 2519–2530, 2021. doi: 10.1109/TMTT.2021.3066972
|
[99] |
N. Landsberg, O. Asaf, and W. Shin, “A D-band LNA using a 22 nm FD-SOI CMOS technology for radar applications, ” in Proceedings of 2021 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems, Tel Aviv, Israel, pp. 178–180, 2021.
|
[100] |
V. Chauhan, N. Collaert, and P. Wambacq, “A 120–140-GHz LNA in 250-nm InP HBT,” IEEE Microwave and Wireless Components Letters, vol. 32, no. 11, pp. 1315–1318, 2022. doi: 10.1109/LMWC.2022.3189607
|
[101] |
A. Gadallah, M. H. Eissa, T. Mausolf, et al., “A 300-GHz low-noise amplifier in 130-nm SiGe SG13G3 technology,” IEEE Microwave and Wireless Components Letters, vol. 32, no. 4, pp. 331–334, 2022. doi: 10.1109/LMWC.2021.3128762
|
[102] |
S. P. Singh, T. Rahkonen, M. E. Leinonen, et al., “Design aspects of single-ended and differential SiGe low-noise amplifiers operating above fmax/2in sub-THz/THz frequencies,” IEEE Journal of Solid-State Circuits, vol. 58, no. 9, pp. 2478–2488, 2023. doi: 10.1109/JSSC.2023.3264475
|
[103] |
P. Stärke, C. Carta, and F. Ellinger, “180 GHz HBT MMIC amplifier with 80 GHz bandwidth and low noise figure in 250 nm InP, ” in Proceedings of 2019 European Microwave Conference in Central Europe, Prague, Czech Republic, pp. 99–102, 2019.
|
[104] |
Y. K. Li, Y. Zhang, C. K. Wu, et al., “A 16-QAM 45-Gbps 7-m wireless link using InP HEMT LNA and GaAs SBD mixers at 220-GHz-band,” China Communications, vol. 18, no. 5, pp. 255–262, 2021. doi: 10.23919/JCC.2021.05.016
|
[105] |
H. S. Chen and J. Y. C. Liu, “A 180-GHz low-noise amplifier with recursive Z-embedding technique in 40-nm CMOS,” IEEE Transactions on Circuits and Systems II:Express Briefs, vol. 69, no. 12, pp. 4649–4653, 2022. doi: 10.1109/TCSII.2022.3181702
|
[106] |
D. D. Yang, J. C. Wen, M. L. He, et al. , “A D-band monolithic low noise amplifier on InP HEMT technology, ” in Proceedings of 2018 12th International Symposium on Antennas, Propagation and EM Theory, Hangzhou, China, pp. 1–4, 2018.
|
[107] |
Z. C. Xu, Q. Xie, and Z. Wang, “A study of collaborative gain/noise optimization for LNAs at near- frequencies based on a novel gain-noise plane approach,” IEEE Transactions on Circuits and Systems II:Express Briefs, vol. 70, no. 1, pp. 51–55, 2023. doi: 10.1109/TCSII.2022.3204325
|
[108] |
S. P. Singh, T. Rahkonen, M. E. Leinonen, et al. , “Design aspects of single-ended and differential SiGe low-noise amplifiers operating above fmax/2in sub-THz/THz frequencies, ” IEEE Journal of Solid-State Circuits, vol. 58, no. 9, pp. 2478–2488, 2023. (查阅网上资料,本条文献与第102条文献重复,请确认) .
S. P. Singh, T. Rahkonen, M. E. Leinonen, et al. , “Design aspects of single-ended and differential SiGe low-noise amplifiers operating above fmax/2in sub-THz/THz frequencies, ” IEEE Journal of Solid-State Circuits, vol. 58, no. 9, pp. 2478–2488, 2023. (查阅网上资料,本条文献与第102条文献重复,请确认).
|
[109] |
A. Karakuzulu, M. H. Eissa, D. Kissinger, et al., “Full D-band transmit–receive module for phased array systems in 130-nm SiGe BiCMOS,” IEEE Solid-State Circuits Letters, vol. 4 pp. 40–43, 2021. doi: 10.1109/LSSC.2021.3054512
|
[110] |
M. Hossain, R. Doerner, H. Yacoub, et al. , “Highly linear D-band low-noise amplifier with 8.5dB noise figure in InP-DHBT technology, ” in Proceedings of 2021 16th European Microwave Integrated Circuits Conference, London, United Kingdom, pp. 140–143, 2022.
|
[111] |
C. C. Renaud, M. Natrella, C. Graham, et al., “Antenna integrated THz uni-traveling carrier photodiodes,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 24, no. 2, article no. 8500111, 2018. doi: 10.1109/JSTQE.2017.2725444
|
[112] |
M. Che, K. Kondo, H. Kanaya, et al., “Arrayed photomixers for THz beam-combining and beam-steering,” Journal of Lightwave Technology, vol. 40, no. 20, pp. 6657–6665, 2022. doi: 10.1109/JLT.2022.3204113
|
[113] |
L. Zhao, Y. T. Li, C. W. Liu, et al. , “Demonstration of 470 GHz bandwidth wireless transmitter based on photo-mixer for simultaneous transmission of photonics-generated signals in all-band 6G systems, ” in Proceedings of the Optical Fiber Communication Conference (OFC) 2021, Washington, DC, USA, article no. M3J. 2, 2021.
|
[114] |
Y. J. Lin and M. Jarrahi, “Heterodyne terahertz detection through electronic and optoelectronic mixers,” Reports on Progress in Physics, vol. 83, no. 6, article no. 066101, 2020. doi: 10.1088/1361-6633/ab82f6
|
[115] |
G. Zhou, P. Runge, S. Keyvaninia, et al., “High-power InP-based waveguide integrated modified uni-traveling-carrier photodiodes,” Journal of Lightwave Technology, vol. 35, no. 4, pp. 717–721, 2017. doi: 10.1109/JLT.2016.2591266
|
[116] |
S. H. Yang and M. Jarrahi, “Navigating terahertz spectrum via photomixing,” Optics and Photonics News, vol. 31, no. 7, pp. 36–43, 2020. doi: 10.1364/OPN.31.7.000036
|
[117] |
H. Ito and T. Ishibashi, “Photonic terahertz-wave generation using slot-antenna-integrated uni-traveling-carrier photodiodes,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 23, no. 4, article no. 3800907, 2017. doi: 10.1109/JSTQE.2017.2657678
|
[118] |
H. Ito, “Photonic THz-wave generation by UTC-PD and its related device, ” in Proceedings of 2016 Progress in Electromagnetic Research Symposium, Shanghai, China, pp. 3904–3904, 2016.
|
[119] |
X. B. Yu, H. Q. Zhang, Z. M. Yang, et al. , “Photonic-wireless communication and sensing in the terahertz band, ” in Proceedings of the Optical Fiber Communication Conference (OFC) 2023, San Diego, CA, USA, article no. W4J. 1, 2023.
|
[120] |
E. Rouvalis, C. C. Renaud, D. G. Moodie, et al., “Traveling-wave uni-traveling carrier photodiodes for continuous wave THz generation,” Optics Express, vol. 18, no. 11, pp. 11105–11110, 2010. doi: 10.1364/OE.18.011105
|
[121] |
T. Ishibashi, N. Shimizu, S. Kodama, et al. , “Uni-traveling-carrier photodiodes, ” in Proceedings of the Ultrafast Electronics and Optoelectronics, Incline Village, NV, USA, article no. UC3, 1997.
|
[122] |
H. J. Song, K. Ajito, Y. Muramoto, et al., “Uni-travelling-carrier photodiode module generating 300 GHz power greater than 1 mW,” IEEE Microwave and Wireless Components Letters, vol. 22, no. 7, pp. 363–365, 2012. doi: 10.1109/LMWC.2012.2201460
|
[123] |
Y. Omori, T. Hosotani, T. Otsuji, et al. , “UTC-PD-integrated HEMT for optical-to-millimeter-wave carrier frequency down-conversion, ” in Proceedings of 2019 Optical Fiber Communications Conference and Exhibition, San Diego, CA, USA, article no. Th3B. 5, 2019.
|
[124] |
J. Kim, E. S. Lee, J. Cho, et al. , “Waveguide packaged UTC-PD module for terahertz applications, ” in Proceedings of SPIE PC12000, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XV, San Francisco, CA, United States, article no. PC1200007, 2022.
|
[125] |
T. Harter, M. Weber, S. Muehlbrandt, et al. , “Wireless THz communications using optoelectronic techniques for signal generation and coherent reception, ” in Proceedings of the Conference on Lasers and Electro-Optics, San Jose, CA, USA, article no. SM3J. 2, 2017.
|
[126] |
D. Nakajima, K. Nishimura, M. Watanabe, et al. , “Conversion gain enhancement of a UTC-PD-integrated HEMT photonic double-mixer by high-intensity optical subcarrier signal, ” in Proceedings of the Optical Fiber Communication Conference (OFC) 2023, San Diego CA, USA, article no. M3D. 7, 2023.
|